Abstract: There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask. A phase shift mask (100) according to the present embodiment is a phase shift mask having a circuit pattern by application of exposure light having a wavelength of 200 nm or less, the phase shift mask including a substrate (11), a phase shift film (12) that is formed on the substrate (11) and has a circuit pattern, and a protective film (13) that is formed on an upper surface (12t) and a side surface (12s) of the phase shift film (12), in which the phase shift film (12) enables adjustment of each of phase and transmittance with respect to the exposure light to be transmitted to a predetermined extent, the protective film (13) has a refractive index n in a range of 1.2 or more and 2.6 or less with respect to the exposure light and an attenuation coefficient k in a range of 0.0 or more and 0.

Abstract: There are provided a phase shift mask having a small number of haze defects, that is, a phase shift mask capable of sufficiently suppressing occurrence of haze, and a method for manufacturing the phase shift mask.

Abstract: Provided are a phase shift mask blank that suppresses the formation of haze on a phase shift film surface and reduces film peeling during cleaning or a level difference in a cross-section of a modified portion during modification etching to improve transfer performance, a phase shift mask, and a method for manufacturing a phase shift mask.

Abstract: Provided are a phase shift mask blank that can sufficiently suppress the formation of haze on a phase shift film surface (on a phase mask), a phase shift mask having reduced haze defects, a method for manufacturing the phase shift mask, and a method for modifying the phase shift mask by electron beam modification etching.

Abstract: There are provided a phase shift mask blank capable of sufficiently suppressing the generation of a haze on a mask, a phase shift mask with few haze defects, and a method for manufacturing the phase shift mask.

Abstract: A laminate includes: a substrate having a first surface and made of a high-molecular-weight material; an undercoat layer located on at least part of the first surface of the substrate and containing a first inorganic substance that has adsorption sites to be coupled to precursors serving as film-forming materials of an atomic layer deposition film; a functional layer located covering an outer surface of the undercoat layer and containing a second inorganic substance to be coupled to the adsorption sites of the undercoat layer, the functional layer being the atomic layer deposition film formed of the precursors; and an overcoat layer located covering an outer surface of the functional layer and containing a third inorganic substance.

Abstract: A laminate includes: a substrate having a first surface and made of a high-molecular-weight material; an undercoat layer located on at least part of the first surface of the substrate and containing a first inorganic substance that has adsorption sites to be coupled to precursors serving as film-forming materials of an atomic layer deposition film; a functional layer located covering an outer surface of the undercoat layer and containing a second inorganic substance to be coupled to the adsorption sites of the undercoat layer, the functional layer being the atomic layer deposition film formed of the precursors; and an overcoat layer located covering an outer surface of the functional layer and containing a third inorganic substance.

Abstract: A laminate body of the present invention includes a base material, an atomic layer deposition film that is formed along the outer surface of the base material, and an overcoat layer that covers the atomic layer deposition film with a film having a mechanical strength higher than that of the atomic layer deposition film.

Abstract: A method for forming a feature in a substrate, where residue within the feature can be easily removed. An upper sidewall portion of the feature is formed, where the upper sidewall portion forms a void in the substrate. The upper sidewall portion has an upper sidewall angle. A lower sidewall portion of the feature is formed, where the lower sidewall portion forms a void in the substrate. The lower sidewall portion has a lower sidewall angle. The upper sidewall angle of the upper sidewall portion is shallower than the lower sidewall angle of the lower sidewall portion. By forming the feature with a shallower sidewall angle at the top of the feature, any debris within the feature is more susceptible to rinsing, etching, or other cleaning procedures, and thus the feature is more easily cleaned than standard features having relatively steeper sidewalls.

Abstract: A method for forming a feature in a substrate, where residue within the feature can be easily removed. An upper sidewall portion of the feature is formed, where the upper sidewall portion forms a void in the substrate. The upper sidewall portion has an upper sidewall angle. A lower sidewall portion of the feature is formed, where the lower sidewall portion forms a void in the substrate. The lower sidewall portion has a lower sidewall angle. The upper sidewall angle of the upper sidewall portion is shallower than the lower sidewall angle of the lower sidewall portion. By forming the feature with a shallower sidewall angle at the top of the feature, any debris within the feature is more susceptible to rinsing, etching, or other cleaning procedures, and thus the feature is more easily cleaned than standard features having relatively steeper sidewalls.

Abstract: A wafer chuck is configured to hold a wafer efficiently for spin process cleaning of wafer edges and back sides. A first group of retractable tips extend to hold the wafer during a first portion of the cleaning period. A second group of retractable tips extend to hold the wafer during a second portion of the cleaning period. Residues left between the tips and the wafer edge areas during the first portion of the cleaning period are removed during the second portion. The change from the first group of tips to the second group of tips occurs while the wafer is rotating.

Abstract: A wafer chuck is configured to hold a wafer efficiently for spin process cleaning of wafer edges and back sides. A first group of retractable tips extend to hold the wafer during a first portion of the cleaning period. A second group of retractable tips extend to hold the wafer during a second portion of the cleaning period. Residues left between the tips and the wafer edge areas during the first portion of the cleaning period are removed during the second portion. The change from the first group of tips to the second group of tips occurs while the wafer is rotating.

Abstract: A wafer chuck is configured to hold a wafer efficiently for spin process cleaning of wafer edges and back sides. A first group of retractable tips extend to hold the wafer during a first portion of the cleaning period. A second group of retractable tips extend to hold the wafer during a second portion of the cleaning period. Residues left between the tips and the wafer edge areas during the first portion of the cleaning period are removed during the second portion. The change from the first group of tips to the second group of tips occurs while the wafer is rotating.