Abstract: There is provided an optical measurement analysis device capable of applying light to substantially the entire surface of a to-be-analyzed object for improving the analysis accuracy. The optical measurement analysis device according to the present embodiment includes a container, a light source, a light irradiation unit, a light reception unit, a spectroscope unit, and an analyzing unit for analyzing an optical spectrum obtained by the spectroscope unit. The container has an inner wall adapted to reflect light reflected by the to-be-analyzed object and light transmitted therethrough.

Abstract: An active layer has a quantum well structure formed of InGaAsP, and includes a saturable absorption region and optical amplification regions. To the saturable absorption region, a voltage is applied through a p-electrode, independent from the optical amplification region. To the optical amplification regions, currents are injected through p-electrodes, respectively. An input light Pin entering through a plane of incidence is generated by adding optical noise of white noise, to a light signal assuming binary optical intensity of “1” or “0”. The saturable absorption region and optical amplification regions are formed satisfying conditions that a waveform converting element provides a semiconductor laser of bistable state.

Abstract: A semiconductor laser device has an active layer which is divided into two regions in the direction of a resonator, i.e., a light-amplifying region and a saturable absorber region. The light-amplifying region and the saturable absorber region are produced to allow the semiconductor laser device to be in a bistable state. For the light-amplifying region and the saturable absorber region respectively, p-electrodes are separately and independently formed. N-electrodes are provided in relation to the p-electrodes. From one of the p-electrodes, a current which is modulated with noise added thereto is injected.

Abstract: An active layer has a quantum well structure formed of InGaAsP, and includes a saturable absorption region and optical amplification regions. To the saturable absorption region, a voltage is applied through a p-electrode, independent from the optical amplification region. To the optical amplification regions, currents are injected through p-electrodes, respectively. An input light Pin entering through a plane of incidence is generated by adding optical noise of white noise, to a light signal assuming binary optical intensity of “1” or “0”. The saturable absorption region and optical amplification regions are formed satisfying conditions that a waveform converting element provides a semiconductor laser of bistable state.

Abstract: A semiconductor optical amplifier device includes an active layer, an n-type InP substrate, an n-type InP clad layer, a p-type InP clad layer, p-electrodes and n-electrodes. The active layer is made of, e.g., InGaAsP, and includes a saturable absorption region and optical amplification regions. A common modulated current is injected into each optical amplification region through the p-electrode. A modulated current is injected into the saturable absorption region through the p-electrode independently of the optical amplification region. The active layer receives injection light produced by adding additional noise light to an externally applied light signal, and emits output light produced by amplifying the injection light.

Abstract: A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.

Abstract: A semiconductor optical amplifier device includes an active layer, an n-type InP substrate, an n-type InP clad layer, a p-type InP clad layer, p-electrodes and n-electrodes. The active layer is made of, e.g., InGaAsP, and includes a saturable absorption region and optical amplification regions. A common modulated current is injected into each optical amplification region through the p-electrode. A modulated current is injected into the saturable absorption region through the p-electrode independently of the optical amplification region. The active layer receives injection light produced by adding additional noise light to an externally applied light signal, and emits output light produced by amplifying the injection light.

Abstract: A nitride semiconductor light emitting device includes at least a substrate, an active layer formed of a nitride semiconductor containing mainly In and Ga, a p-electrode and an n-electrode. At least one of the p-electrode and n-electrode is electrically separated into at least two regions.

Abstract: A semiconductor laser device has an active layer which is divided into two regions in the direction of a resonator, i.e., a light-amplifying region and a saturable absorber region. The light-amplifying region and the saturable absorber region are produced to allow the semiconductor laser device to be in a bistable state. For the light-amplifying region and the saturable absorber region respectively, p-electrodes are separately and independently formed. N-electrodes are provided in relation to the p-electrodes. From one of the p-electrodes, a current which is modulated with noise added thereto is injected.