Abstract: A silicon carbide substrate includes a first main surface, a second main surface, a threading screw dislocation, and a blind scratch. The second main surface is located opposite to the first main surface. The threading screw dislocation extends to each of the first main surface and the second main surface. The blind scratch is exposed at the first main surface and extends linearly as viewed in a direction perpendicular to the first main surface. A value obtained by dividing an area density of the blind scratch by an area density of threading screw dislocation is smaller than 0.13.

Abstract: A silicon carbide substrate in accordance with the present disclosure includes a main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. In the main surface, a total area of a region in which a concentration of each of sodium, aluminum, potassium, calcium, titanium, iron, copper, and zinc is less than 5×1010 atoms/cm2 is more than or equal to 95% of an area of the main surface.

Abstract: A silicon carbide substrate includes a first main surface, a second main surface, and an outer peripheral surface. When a defect, in the first main surface, observed using a mirror electron microscope while irradiating the first main surface with an ultraviolet ray is a first defect and a defect, in the first main surface, observed using molten potassium hydroxide is a second defect, a value obtained by dividing an area density of the first defect by an area density of the second defect is more than 0.9 and less than 1.2. The first defect consists of a first blind scratch, a first basal plane dislocation spaced apart from the first blind scratch, a second basal plane dislocation in contact with the first blind scratch, and a second blind scratch spaced apart from each of the first basal plane dislocation and the second basal plane dislocation.

Abstract: A silicon carbide substrate includes a first main surface, a second main surface, a threading screw dislocation, and a blind scratch. The second main surface is located opposite to the first main surface. The threading screw dislocation extends to each of the first main surface and the second main surface. The blind scratch is exposed at the first main surface and extends linearly as viewed in a direction perpendicular to the first main surface. A value obtained by dividing an area density of the blind scratch by an area density of threading screw dislocation is smaller than 0.13.

Abstract: A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The silicon carbide substrate includes screw dislocations and pits having a maximum diameter of 1 ?m or more and 10 ?m or less in a direction parallel to the first main surface. When the screw dislocations and the pits are observed in the first main surface, a percentage obtained by dividing a number of the pits by a number of the screw dislocations is 1% or less. A concentration of magnesium in the first main surface is less than 1×1011 atoms/cm2.

Abstract: A recycle wafer of silicon carbide has a silicon carbide substrate and a first silicon carbide layer. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The first silicon carbide layer is in contact with the first main surface. The silicon carbide substrate includes a substrate region that is within 10 ?m from the first main surface toward the second main surface. In a direction perpendicular to the first main surface, a value obtained by subtracting a value that is three times a standard deviation of a nitrogen concentration in the substrate region from an average value of the nitrogen concentration in the substrate region is greater than a minimum value of a nitrogen concentration in the first silicon carbide layer.

Abstract: A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The silicon carbide substrate includes screw dislocations and pits having a maximum diameter of 1 ?m or more and 10 ?m or less in a direction parallel to the first main surface. When the screw dislocations and the pits are observed in the first main surface, a percentage obtained by dividing a number of the pits by a number of the screw dislocations is 1% or less. A concentration of magnesium in the first main surface is less than 1×1011 atoms/cm2.

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

Abstract: A ratio obtained by dividing a number of pits by a number of screw dislocations is equal to or smaller than 1%. The first main surface has a surface roughness equal to or smaller than 0.15 nm. An absolute value of a difference between the first wave number and the second wave number is equal to or smaller than 0.2 cm?1, and an absolute value of a difference between the first full width at half maximum and the second full width at half maximum is equal to or smaller than 0.25 cm?1.

Abstract: A silicon carbide epitaxial wafer includes a single crystal silicon carbide substrate of 4H polytype having a major surface thereof inclined at an angle ? to a {0001} plane toward a <11-20> direction, and a silicon carbide epitaxial layer of a thickness t formed on the major surface, wherein a diameter of the single crystal silicon carbide substrate is greater than or equal to 150 mm, wherein the angle ? exceeds 0°, and is less than or equal to 6°, wherein one or more pairs of a screw dislocation pit and a diagonal line defect situated at a distance of t/tan? from the pit are present in a surface of the silicon carbide epitaxial layer, and wherein a density of the pairs of a pit and a diagonal line defect is less than or equal to 2 pairs/cm2.

Abstract: A silicon carbide substrate has a first main surface, a second main surface, and a chamfered portion. The second main surface is opposite to the first main surface. The chamfered portion is contiguous to each of the first main surface and the second main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. A surface manganese concentration in the chamfered portion is 1×1011 atoms/cm2 or less.

Abstract: A silicon carbide substrate in accordance with the present disclosure includes a main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. In the main surface, a total area of a region in which a concentration of each of sodium, aluminum, potassium, calcium, titanium, iron, copper, and zinc is less than 5×1010 atoms/cm2 is more than or equal to 95% of an area of the main surface.

Abstract: Prescribed mathematical expressions are satisfied, where ?0 represents a wave number indicating a peak corresponding to a folded mode of a longitudinal optical branch of a Raman spectrum of silicon carbide having a polytype of 4H and having zero stress, ?max represents a maximum value of a wave number indicating a peak corresponding to a folded mode of a longitudinal optical branch of a Raman spectrum of a silicon carbide substrate in a region from a first main surface to a second main surface, ?max represents a minimum value of the wave number indicating the peak corresponding to the folded mode of the longitudinal optical branch of the Raman spectrum, and ?1 represents a wave number indicating a peak corresponding to a folded mode of a longitudinal optical branch of a Raman spectrum of the silicon carbide substrate at the first main surface.

Abstract: A TTV of the silicon carbide substrate is less than or equal to 3 ?m. The first main surface includes a first central region surrounded by a square having each side of 90 mm. An intersection of diagonal lines of the first central region coincides with a center of the first main surface. The first central region is constituted of nine square regions each having each side of 30 mm. A maximum LTV among the nine square regions is less than or equal to 1 ?m. An arithmetic mean roughness Sa in a second central region is less than or equal to 0.1 nm, the second central region being surrounded by a square centering on the intersection and having each side of 250 ?m.

Abstract: A recycle wafer of silicon carbide has a silicon carbide substrate and a first silicon carbide layer. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The first silicon carbide layer is in contact with the first main surface. The silicon carbide substrate includes a substrate region that is within 10 ?m from the first main surface toward the second main surface. In a direction perpendicular to the first main surface, a value obtained by subtracting a value that is three times a standard deviation of a nitrogen concentration in the substrate region from an average value of the nitrogen concentration in the substrate region is greater than a minimum value of a nitrogen concentration in the first silicon carbide layer.

Abstract: A silicon carbide ingot is cut using a wire. The silicon carbide ingot has a polytype of 4H—SiC. The silicon carbide ingot includes a top surface, a bottom surface opposite to the top surface, and a side surface between the top surface and the bottom surface. A direction from the bottom surface toward the top surface is a direction parallel to a [0001] direction or a direction inclined by less than or equal to 8° relative to the [0001] direction. In the cutting of the silicon carbide ingot, the silicon carbide ingot is cut from the side surface at a (000-1) plane side along a straight line parallel to a direction within ±5° relative to a direction that bisects an angle formed by a [1-100] direction and a [11-20] direction when viewed in the direction from the bottom surface toward the top surface.

Abstract: A silicon carbide ingot is cut using a wire. The silicon carbide ingot has a polytype of 4H—SiC. The silicon carbide ingot includes a top surface, a bottom surface opposite to the top surface, and a side surface between the.top surface and the bottom surface. A direction from the bottom surface toward the top surface is a direction parallel to a [0001] direction or a direction inclined by less than or equal to 8° relative to the [0001] direction. In the cutting of the silicon carbide ingot, the silicon carbide ingot is cut from the side surface at a (000-1) plane side along a straight line parallel to a direction within ±5° relative to a direction that bisects an angle formed by a [1-100] direction and a [11-20] direction when viewed in the direction from the bottom surface toward the top surface.

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [?1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [?1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.