Abstract: A siloxane polymer comprising polysiloxane, silphenylene, isocyanuric acid, and polyether skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the siloxane polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency and light resistance.

Abstract: Provided is a photosensitive resin composition comprising (A) a polymer including a silicone skeleton and (B) photo-acid generators, wherein the photo-acid generators (B) comprise (B1) a photo-acid generator which is an onium salt and (B2) a photo-acid generator which is not an onium salt.

Abstract: A polymer comprising polysiloxane, silphenylene, isocyanuric acid, and norbornene skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency, light resistance, and heat resistance.

Abstract: To provide a laminate which enables pattern formation with excellent opening shape even in the case where a chemically amplified negative type resist material is used, and a pattern forming method in which the laminate is used. The laminate includes a chemically amplified negative type resist layer, and a basic resin coat layer thereon that contains 0.001 to 10% by weight of a basic compound having a molecular weight of up to 10,000.

Abstract: A polymer comprising polysiloxane, silphenylene, isocyanuric acid, and norbornene skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency, light resistance, and heat resistance.

Abstract: A siloxane polymer comprising polysiloxane, silphenylene, isocyanuric acid, and polyether skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the siloxane polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency and light resistance.

Abstract: A film material includes a support film having a transmittance of at least 60% with respect to light of wavelength 300-450 nm, and a resin layer containing 0.001-10 wt % of a basic compound with a molecular weight of up to 10,000, and having a thickness of 1-100 ?m. A pattern is formed by attaching the resin layer in the film material to a chemically amplified negative resist layer on a wafer, exposing, baking, and developing the resist layer. The profile of openings in the pattern is improved.

Abstract: A method for manufacturing a semiconductor apparatus, including preparing a first substrate provided with a pad optionally having a plug and a second substrate or device provided with a plug, forming a solder ball on at least one of the pad or plug of first substrate and the plug of second substrate or device, covering at least one of a pad-forming surface of first substrate and a plug-forming surface of second substrate or device with a photosensitive insulating layer, forming an opening on the pad or plug of the substrate or device that has been covered with photosensitive insulating layer by lithography, pressure-bonding the second substrate or device's plug to the pad or plug of first substrate with the solder ball through the opening, electrically connecting pad or plug of first substrate to second substrate or device's plug by baking, and curing photosensitive insulating layer by baking.

Abstract: A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.

Abstract: A semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects.

Abstract: The present invention is a photo-curable resin composition containing (A) a silicone polymer compound having repeating units shown by the formulae (1) and (2), (B) a photosensitive acid generator capable of generating an acid by decomposition with light having a wavelength of 190 to 500 nm, (C) one or more compounds selected from an amino condensate modified with formaldehyde or formaldehyde-alcohol, a phenol compound having on average two or more methylol groups or alkoxymethylol groups per molecule, and a polyhydric phenol compound whose phenolic hydroxyl group is substituted with a glycidoxy group, and (D) one or more compounds selected from polyhydric phenols having 3 or more hydroxyl groups. As a result, there is provided a photo-curable resin composition that can facilitate thick and fine patterning when the composition is used in patterning.

Abstract: To provide a laminate which enables pattern formation with excellent opening shape even in the case where a chemically amplified negative type resist material is used, and a pattern forming method in which the laminate is used. The laminate includes a chemically amplified negative type resist layer, and a basic resin coat layer thereon that contains 0.001 to 10% by weight of a basic compound having a molecular weight of up to 10,000.

Abstract: A film material includes a support film having a transmittance of at least 60% with respect to light of wavelength 300-450 nm, and a resin layer containing 0.001-10 wt % of a basic compound with a molecular weight of up to 10,000, and having a thickness of 1-100 ?m. A pattern is formed by attaching the resin layer in the film material to a chemically amplified negative resist layer on a wafer, exposing, baking, and developing the resist layer. The profile of openings in the pattern is improved.

Abstract: The purpose of the present invention is to provide an adhesive composition using a silicone polymer compound, which does not require exposure, baking and development processes for the production, thereby making the production cost low and making the productivity high, which has good characteristics such as good adhesiveness, good hermetic sealing properties after thermal curing and low moisture absorption that are required for adhesives, which provides a cured film having high reliabilities such as high heat resistance and high light resistance, and which is capable of suppressing warping of a bonded substrate after back grinding that is necessary in the three-dimensional mounting production.

Abstract: A method for manufacturing a semiconductor apparatus, including preparing a first substrate provided with a pad optionally having a plug and a second substrate or device provided with a plug, forming a solder ball on at least one of the pad or plug of first substrate and the plug of second substrate or device, covering at least one of a pad-forming surface of first substrate and a plug-forming surface of second substrate or device with a photosensitive insulating layer, forming an opening on the pad or plug of the substrate or device that has been covered with photosensitive insulating layer by lithography, pressure-bonding the second substrate or device's plug to the pad or plug of first substrate with the solder ball through the opening, electrically connecting pad or plug of first substrate to second substrate or device's plug by baking, and curing photosensitive insulating layer by baking.

Abstract: A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.

Abstract: The present invention is a semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first photosensitive insulating layer formed on the semiconductor device, and a second photosensitive insulating layer formed on the first photosensitive insulating layer, in which the first and second photosensitive insulating layers are composed of a photo-curable resin composition containing a silicone polymer compound having an epoxy group-containing repeating unit shown by formula (1) and a phenolic hydroxyl group-containing repeating unit shown by formula (2), a photosensitive acid generator, a solvent, and crosslinking agents.

Abstract: A semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects.

Abstract: The present invention is a semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first photosensitive insulating layer formed on the semiconductor device, and a second photosensitive insulating layer formed on the first photosensitive insulating layer, in which the first and second photosensitive insulating layers are composed of a photo-curable resin composition containing a silicone polymer compound having an epoxy group-containing repeating unit shown by formula (1) and a phenolic hydroxyl group-containing repeating unit shown by formula (2), a photosensitive acid generator, a solvent, and crosslinking agents.

Abstract: The present invention is a photo-curable resin composition containing (A) a silicone polymer compound having repeating units shown by the formulae (1) and (2), (B) a photosensitive acid generator capable of generating an acid by decomposition with light having a wavelength of 190 to 500 nm, (C) one or more compounds selected from an amino condensate modified with formaldehyde or formaldehyde-alcohol, a phenol compound having on average two or more methylol groups or alkoxymethylol groups per molecule, and a polyhydric phenol compound whose phenolic hydroxyl group is substituted with a glycidoxy group, and (D) one or more compounds selected from polyhydric phenols having 3 or more hydroxyl groups. As a result, there is provided a photo-curable resin composition that can facilitate thick and fine patterning when the composition is used in patterning.