Abstract: An etching processing apparatus and an etching processing method using a liquid fluorocarbon or a liquid hydrofluorocarbon precursor are proposed, the etching processing apparatus and etching processing method capable of achieving almost the same effect as cryogenic etching even at a relatively high temperature compared to cryogenic etching. In addition, an etching processing apparatus and an etching processing method capable of solving process problems that may arise due to a liquid precursor and a low temperature may be provided.

Abstract: Proposed are a method and a system for removing L-FC in a plasma etching process, in which L-FC, which is condensed on a wafer, an electrode, a substrate, a head, or the like, is removed by using infrared or ultraviolet rays in a plasma etching process using an L-FC precursor.

Abstract: The present disclosure relates to a method of etching an atomic layer, that is capable of simultaneously removing an upper surface and a side surface of an etch subject material layer by heating with a light source of a lamp when removing the atomic layer, thereby easily reducing the planar size even in the case of patterns in the scale of several nanometers.

Abstract: An inductively coupled plasma processing apparatus for a large area processing includes a reaction chamber and a bending type antenna structure. The bending type antenna structure includes bending type linear antennas. Each of the bending type linear antennas has a first end, a second end and a bended portion. The bending type linear antennas are arranged horizontally in parallel with the substrate to pass through the reaction chamber inside the reaction chamber. The bending type linear antennas are spaced apart from each other. A bended portion of a bending type linear antenna is protruded out of the reaction chamber, a first end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to an RF power, and a second end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to a ground.

Abstract: A inductively coupled plasma apparatus includes reaction chamber in which a substrate is loaded, and a double comb type antenna structure including first linear antennas and second linear antennas respectively arranged horizontally to pass through the reaction chamber inside the reaction chamber. The first and second linear antenna are alternately aligned each other. First ends the first linear antennas are protruded out of the reaction chamber and coupled to each other so as to be coupled to a first induced RF power, and first ends of the second linear antennas are protruded out of the reaction chamber in opposition to the first ends of the first linear antennas and coupled to each other so as to be coupled to a second induced RF power. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.

Abstract: A plasma processing apparatus for a very large area using a dual frequency is provided.

Abstract: An inductively coupled plasma processing apparatus for a large area processing includes a reaction chamber and a bending type antenna structure. The bending type antenna structure includes bending type linear antennas. Each of the bending type linear antennas has a first end, a second end and a bended portion. The bending type linear antennas are arranged horizontally in parallel with the substrate to pass through the reaction chamber inside the reaction chamber. The bending type linear antennas are spaced apart from each other. A bended portion of a bending type linear antenna is protruded out of the reaction chamber, a first end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to an RF power, and a second end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to a ground.

Abstract: A inductively coupled plasma apparatus includes reaction chamber in which a substrate is loaded, and a double comb type antenna structure including first linear antennas and second linear antennas respectively arranged horizontally to pass through the reaction chamber inside the reaction chamber. The first and second linear antenna are alternately aligned each other. First ends the first linear antennas are protruded out of the reaction chamber and coupled to each other so as to be coupled to a first induced RF power, and first ends of the second linear antennas are protruded out of the reaction chamber in opposition to the first ends of the first linear antennas and coupled to each other so as to be coupled to a second induced RF power. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.

Abstract: An inductively coupled plasma processing apparatus for a large area processing, the inductively coupled plasma processing apparatus comprising: a reaction chamber; a plurality of linear antennas horizontally arranged at an inner upper portion of the reaction chamber while being spaced from each other by a predetermined distance for receiving induced RF power, the linear antennas being coupled to each other at an outer portion of the reaction chamber, the linear antennas including at least one bending antenna formed by connecting first ends of adjacent antennas, which are exposed to the outer portion of the reaction chamber, to each other; and at least one magnet positioned adjacent to the linear antennas for creating a magnetic field perpendicularly crossing an electric field created by the linear antennas in such a manner that electrons perform a spiral movement.

Abstract: A plasma processing apparatus for a very large area using a dual frequency is provided.

Abstract: Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.

Abstract: Disclosed is an inductively coupled plasma apparatus using a magnetic field. The inductively coupled plasma apparatus comprises a reaction chamber in which a substrate is loaded, an antenna source installed in the reaction chamber and including first and second antennas having antenna rods, which are alternately aligned, and magnets installed above the antenna rods, wherein first sides of the first and second antennas are connected to a power source and second sides of the first and second antennas are grounded. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.

Abstract: Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.

Abstract: Disclosed is an inductively coupled plasma processing apparatus for a large area processing. The inductively coupled plasma processing apparatus has a reaction chamber, a plurality of linear antennas horizontally arranged at an inner upper portion of the reaction chamber while being spaced from each other by a predetermined distance for receiving induced RF power, and at least one magnet positioned adjacent to the linear antennas for creating a magnetic field perpendicularly crossing an electric field created by the linear antennas in such a manner that electrons perform a spiral movement. The linear antennas are coupled to each other at an outer portion of the reaction chamber and include at least one bending antenna formed by connecting first ends of adjacent antennas, which are exposed to the outer portion of the reaction chamber, to each other. Selectively, the linear antennas include a plurality of first linear antennas and second antennas arranged between the first linear antennas.

Abstract: Disclosed is an inductively coupled plasma processing apparatus having an internal antenna for large area processing and capable of improving plasma characteristics, such as plasma density and plasma uniformity while reducing plasma potential. The inductively coupled plasma processing apparatus has a plurality of linear antennas horizontally arranged at an inner upper portion of a reaction chamber while being spaced from each other by a predetermined distance and being connected to each other in series or in a row for receiving induced RF power and at least one magnet positioned adjacent to the linear antennas for creating a magnetic field perpendicularly crossing an electric field created by the linear antennas in such a manner that electrons perform a spiral movement.

Abstract: Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.