Abstract: A semiconductor device includes a first gate electrode structure having a first gate insulating layer on a substrate and a first gate electrode on the first gate insulating layer. A first spacer structure includes a first spacer and a second spacer on side walls of the first gate electrode structure. The first spacer is disposed between the second spacer and the first gate electrode. A source/drain region is disposed on opposite sides of the first gate electrode structure. The first gate electrode includes a lower part of the first gate electrode, an upper part of the first gate electrode disposed on the lower part of the first gate electrode, and the first spacer is disposed on the side wall of the upper pan of the first gate electrode and is not disposed on the side wall of the lower part of the first gate electrode.

Abstract: A semiconductor device includes a first gate electrode structure having a first gate insulating layer on a substrate and a first gate electrode on the first gate insulating layer. A first spacer structure includes a first spacer and a second spacer on side walls of the first gate electrode structure. The first spacer is disposed between the second spacer and the first gate electrode. A source/drain region is disposed on opposite sides of the first gate electrode structure. The first gate electrode includes a lower part of the first gate electrode, an upper part of the first gate electrode disposed on the lower part of the first gate electrode, and the first spacer is disposed on the side wall of the upper pan of the first gate electrode and is not disposed on the side wall of the lower part of the first gate electrode.

Abstract: A method of manufacturing a semiconductor device may include forming split gate structures including a floating gate electrode layer and a control gate electrode layer in a cell region of a substrate including the cell region and a logic region adjacent to the cell region. The method may include sequentially forming a first gate insulating film and a metal gate film in the logic region and the cell region, removing the metal gate film from at least a portion of the cell region and the logic region, forming a second gate insulating film on the first gate insulating film from which the metal gate film has been removed, forming a gate electrode film on the logic region and the cell region, and forming a plurality of memory cell elements disposed in the cell region and a plurality of circuit elements disposed in the logic region.

Abstract: A method of manufacturing a semiconductor device may include forming split gate structures including a floating gate electrode layer and a control gate electrode layer in a cell region of a substrate including the cell region and a logic region adjacent to the cell region. The method may include sequentially forming a first gate insulating film and a metal gate film in the logic region and the cell region, removing the metal gate film from at least a portion of the cell region and the logic region, forming a second gate insulating film on the first gate insulating film from which the metal gate film has been removed, forming a gate electrode film on the logic region and the cell region, and forming a plurality of memory cell elements disposed in the cell region and a plurality of circuit elements disposed in the logic region.