Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes depositing an O3-TEOS oxide film having a good flow-like property under a high adhesive force in order to prevent degradation in the characteristic of the surface of a lower insulating film made of a PE-TEOS oxide film and generation of defect due to the topology difference. Therefore, the disclosed method can improve the electrical characteristic of a semiconductor device and the manufacturing yield.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes depositing an O3-TEOS oxide film having a good flow-like property under a high adhesive force in order to prevent degradation in the characteristic of the surface of a lower insulating film made of a PE-TEOS oxide film and generation of defect due to the topology difference. Therefore, the disclosed method can improve the electrical characteristic of a semiconductor device and the manufacturing yield.

Abstract: In a method for forming a storage node contact, the inorganic SOG layer is deposited and heat-treated after forming a bit line having a conductive layer and a spacer on the semiconductor substrate and accordingly, there is an advantage that the density of the organic SOG layer embedded between the bit lines become lower than that of the organic SOG layer stacked on the bit lines. As a result, when performing the wet etching process, the speed for etching the inorganic SOG layer between the bit lines become very rapid, so that an artificial void is formed, an etching become very easier when performing a dry etching process of a deep storage node contact junction part. According to the present invention, the characteristic and yield of the semiconductor device become increased. Also, the present invention is very useful and effective because the high integration of the semiconductor device is possible.