Abstract: A power metal oxide silicon field effect transistor in which sources are connected to each other, a single source supplies electrons to two channels, a contact surface between the source and a channel is variously changed to be maximized such that large current flows in a small area, and an electrical field is not concentrated to a gate edge.

Abstract: An RF device includes a semiconductor substrate; an insulating layer thereon; a first plate type ground layer having a slot, on a top of the insulating layer; a signal line in the insulating layer beneath the first ground layer; a plurality of second ground layers in the insulating layer around the signal line; and a via hole connecting the first ground layer and the second ground layer.

Abstract: Embodiments relate to a CMOS image sensor and a method of fabricating the same. In embodiments, a recessed gate of a transfer transistor (Tx) may be formed. In embodiments, a device isolation layer may be formed on a semiconductor substrate including an epitaxial layer, a recessed gate electrode pattern of a transfer transistor may be formed to penetrate an inside of the substrate including the epitaxial layer, a photodiode area may be formed on the epitaxial layer next to one side of the recessed gate electrode pattern, a trap preventing layer may be formed on the photodiode area, and a drain region may be formed within a surface of the substrate next to the other side of the recessed gate electrode pattern.

Abstract: A power metal oxide silicon field effect transistor in which sources are connected to each other, a single source supplies electrons to two channels, a contact surface between the source and a channel is variously changed to be maximized such that large current flows in a small area, and an electrical field is not concentrated to a gate edge.