Abstract: A display device includes: a display panel including a display area including pixels and a non-display area including a dummy pixel; a scan driver which supplies a scan signal to the display panel; a data driver which supplies a data signal to the display panel; and a timing controller which supplies a first control signal for controlling the scan driver and a second control signal for controlling the data driver. The dummy pixel is connected to a bad pixel among the pixels in the display area through a repair line, and a connection of the dummy pixel to the repair line is cut off in an initialization phase in which a voltage of an initialization power source is supplied.

Abstract: Disclosed is a light emitting device package and a lighting system. The light emitting device package includes a body, a first lead frame on the body, a plurality of light emitting diodes on the first lead frame, and a molding member on the light emitting diodes. The distance between the light emitting diodes includes a distance equal to or less than a length of a first side of a first light emitting diode of the light emitting diodes.

Abstract: Provided are a lighting device and a lighting system having the same. The lighting device includes a board having a recess, a lead frame disposed in the recess and including a first lead frame protrusion protruding upward, and a light emitting device disposed on the lead frame.

Abstract: Provided are embodiments of a light emitting device and fabrication methods thereof. The light emitting device can include a buffer layer provided between a substrate and a semiconductor layer incorporating a high fusion point metal. In a fabrication method of the light emitting device, the buffer layer incorporating a high fusion point metal can be formed on a substrate, and a semiconductor layer can be formed on the buffer layer.

Abstract: Provided are a light emitting apparatus and a light unit having the same. The light emitting apparatus includes a light emitting device includes a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.

Abstract: Disclosed is a semiconductor light emitting device including a first conductive semiconductor layer including an n-type dopant, an active layer, and a second to sixth conductive semiconductor layers including a p-type dopant. The third to sixth conductive semiconductor layers includes an AlGaN-based semiconductor on the active layer, and the second conductive semiconductor layer includes a GaN-based semiconductor layer on the sixth conductive semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor. The sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm.

Abstract: Disclosed is a semiconductor light emitting device including a first conductive semiconductor layer including an n-type dopant, an active layer, and a second to sixth conductive semiconductor layers including a p-type dopant. The third to sixth conductive semiconductor layers includes an AlGaN-based semiconductor on the active layer, and the second conductive semiconductor layer includes a GaN-based semiconductor layer on the sixth conductive semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor. The sixth conductive semiconductor layer has a thickness of about 5 nm to about 100 nm.

Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a current blocking region under the second conductive semiconductor layer; a second electrode layer under the second conductive semiconductor layer and the current blocking region; and a first electrode layer including a protrusion protruding toward the first conductive semiconductor layer arranged, on the first conductive semiconductor layer.

Abstract: Disclosed is a semiconductor light emitting device including a first to third conductive semiconductor layers which have an n-type dopant, an active layer, and a fourth and fifth conductive semiconductor layers which have a p-type dopant. The first and third conductive semiconductor layers are a GaN semiconductor, and the second conductive semiconductor layer is an InGaN-based semiconductor layer. The fourth conductive semiconductor layer is formed of an AlGaN semiconductor and the fifth conductive semiconductor layer is formed of a GaN-based semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor, and at least two of the plurality barrier layers has a thickness of about 50 ? to about 300 ?.

Abstract: Provided are a light emitting apparatus and a light unit having the same. The light emitting apparatus includes a light emitting device includes a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.

Abstract: Provides are a light emitting apparatus and a light unit having the same. The light emitting apparatus comprises a light emitting device comprising a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.

Abstract: Provides is a semiconductor light-emitting device. The semiconductor light-emitting device includes a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer, on a substrate. Portions of the substrate and the first conduction-type cladding layer are removed. According to the light-emitting device having the above-construction, damage to a grown epitaxial layer is reduced, and a size of an active layer increases, so that a light-emission efficiency increases. Even when a size of a light-emitting device is small, a short-circuit occurring between electrodes can be prevented. Further, brightness and reliability of the light-emitting device are improved.

Abstract: Provides are a light emitting apparatus and a light unit having the same. The light emitting apparatus comprises a light emitting device comprising a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.

Abstract: Provides are a light emitting apparatus and a light unit having the same. The light emitting apparatus comprises a light emitting device comprising a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.

Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a current blocking region under the second conductive semiconductor layer; a second electrode layer under the second conductive semiconductor layer and the current blocking region; and a first electrode layer including a protrusion protruding toward the first conductive semiconductor layer arranged, on the first conductive semiconductor layer.

Abstract: Provides are a light emitting apparatus and a light unit having the same. The light emitting apparatus comprises a light emitting device comprising a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.

Abstract: Provides are a light emitting apparatus and a light unit having the same. The light emitting apparatus comprises a light emitting device comprising a light emitting element and a plurality of external leads, and a plurality of electrode pads under the light emitting device.

Abstract: A light emitting apparatus includes a light emitting diode including a body with a light emitting diode chip packaged therein and a plurality of lead electrodes contacted with one side of the body and a board including a plurality of electrode pads connected to lower surfaces of the lead electrodes of the light emitting diode. The lower surfaces of the lead electrodes of the light emitting diode correspond to top surfaces of electrode pads of the board with same shapes. The lower surfaces of the lead electrodes of the light emitting diode are disposed within a region of top surfaces of the electrode pads of the board, respectively.

Abstract: Provided are a lighting device and a lighting system having the same. The lighting device includes a board having a recess, a lead frame disposed in the recess and including a first lead frame protrusion protruding upward, and a light emitting device disposed on the lead frame.

Abstract: Disclosed is a light emitting device package and a lighting system. The light emitting device package includes a body, a first lead frame on the body, a plurality of light emitting diodes on the first lead frame, and a molding member on the light emitting diodes. The distance between the light emitting diodes includes a distance equal to or less than a length of a first side of a first light emitting diode of the light emitting diodes.