Patents by Inventor Kyoo-Ho JUNG

Kyoo-Ho JUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12230671
    Abstract: Semiconductor devices are provided. The semiconductor devices includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, a capacitor dielectric film that is on the lower electrode and includes both a tetragonal crystal system and an orthorhombic crystal system, a first doping layer that is between the lower electrode and the capacitor dielectric film and includes a first metal, and an upper electrode on the capacitor dielectric film.
    Type: Grant
    Filed: August 26, 2021
    Date of Patent: February 18, 2025
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung Min Park, Han Jin Lim, Kyoo Ho Jung, Cheol Jin Cho
  • Publication number: 20250040122
    Abstract: A semiconductor device includes a landing pad on a substrate; a lower electrode extending in a vertical direction on the landing pad, the lower electrode connected to the landing pad; a capacitor dielectric layer on the lower electrode; a doping layer between the lower electrode and the capacitor dielectric layer, the doping layer being in contact with each of the lower electrode and the capacitor dielectric layer, the doping layer is doped with first to third materials, the first material having a trivalent atom valence electron, the second material having a tetravalent atom valence electron, and the third material having a pentavalent atom valence electron; and an upper electrode on the capacitor dielectric layer.
    Type: Application
    Filed: February 15, 2024
    Publication date: January 30, 2025
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyoo Ho JUNG, Ye Seul LEE, Jong Yeong MIN, Joon Suk PARK, Ji Ye BAEK, Jin Wook LEE
  • Patent number: 12125872
    Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
    Type: Grant
    Filed: July 6, 2023
    Date of Patent: October 22, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han Jin Lim, Ki Nam Kim, Hyung Suk Jung, Kyoo Ho Jung, Ki Hyun Hwang
  • Patent number: 12094924
    Abstract: A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).
    Type: Grant
    Filed: January 3, 2022
    Date of Patent: September 17, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoo Ho Jung, Sang Yeol Kang, Su Hwan Kim, Dong Kwan Baek, Yu Kyung Shin, Won Sik Choi
  • Publication number: 20230402500
    Abstract: A capacitor structure includes lower and electrodes, and a capacitor dielectric film interposed therebetween. The lower electrode includes a lower electrode film including a first metal element, a first doped oxide film including a second metal element and an oxide of the first metal element, and a first metal oxide film. The first metal oxide film includes an oxide of the first metal element and is free of the second metal element. The upper electrode includes an upper electrode film including the first metal element, a second doped oxide film including the second metal element and an oxide of the first metal element, and a second metal oxide film that includes an oxide of the first metal element, and is free of the second metal element.
    Type: Application
    Filed: February 8, 2023
    Publication date: December 14, 2023
    Inventors: Cheol Jin CHO, Young-Lim PARK, Kyoo Ho JUNG
  • Publication number: 20230361161
    Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
    Type: Application
    Filed: July 6, 2023
    Publication date: November 9, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Han Jin LIM, Ki Nam KIM, Hyung Suk JUNG, Kyoo Ho JUNG, Ki Hyun HWANG
  • Patent number: 11728372
    Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
    Type: Grant
    Filed: April 6, 2022
    Date of Patent: August 15, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han Jin Lim, Ki Nam Kim, Hyung Suk Jung, Kyoo Ho Jung, Ki Hyun Hwang
  • Patent number: 11705483
    Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: July 18, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-Sun Kim, Sang-Yeol Kang, Kyoo-Ho Jung, Kyu-Ho Cho, Hyo-Sik Mun
  • Publication number: 20230008127
    Abstract: A capacitor structure, a semiconductor memory device including the same, a method for fabricating the same, and a method for fabricating a semiconductor device including the same are provided. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film which is interposed between the lower electrode and the upper electrode, wherein the lower electrode includes an electrode film including a first metal element, and a doping oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, and the doping oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf).
    Type: Application
    Filed: January 3, 2022
    Publication date: January 12, 2023
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyoo Ho JUNG, Sang Yeol KANG, Su Hwan KIM, Dong Kwan BAEK, Yu Kyung SHIN, Won Sik CHOI
  • Patent number: 11527604
    Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.
    Type: Grant
    Filed: June 9, 2021
    Date of Patent: December 13, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-Lim Park, Se Hyoung Ahn, Sang Yeol Kang, Chang Mu An, Kyoo Ho Jung
  • Publication number: 20220238641
    Abstract: Semiconductor devices are provided. The semiconductor devices includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, a capacitor dielectric film that is on the lower electrode and includes both a tetragonal crystal system and an orthorhombic crystal system, a first doping layer that is between the lower electrode and the capacitor dielectric film and includes a first metal, and an upper electrode on the capacitor dielectric film.
    Type: Application
    Filed: August 26, 2021
    Publication date: July 28, 2022
    Inventors: Jung Min Park, Han Jin Lim, Kyoo Ho Jung, Cheol Jin Cho
  • Publication number: 20220231117
    Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
    Type: Application
    Filed: April 6, 2022
    Publication date: July 21, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Han Jin LIM, Ki Nam KIM, Hyung Suk JUNG, Kyoo Ho JUNG, Ki Hyun HWANG
  • Patent number: 11322578
    Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: May 3, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Han Jin Lim, Ki Nam Kim, Hyung Suk Jung, Kyoo Ho Jung, Ki Hyun Hwang
  • Publication number: 20210343832
    Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.
    Type: Application
    Filed: July 2, 2021
    Publication date: November 4, 2021
    Inventors: EUN-SUN KIM, SANG-YEOL KANG, KYOO-HO JUNG, KYU-HO CHO, HYO-SIK MUN
  • Publication number: 20210296429
    Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.
    Type: Application
    Filed: June 9, 2021
    Publication date: September 23, 2021
    Inventors: Young-Lim PARK, Se Hyoung AHN, Sang Yeol KANG, Chang Mu AN, Kyoo Ho JUNG
  • Patent number: 11088240
    Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: August 10, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-Sun Kim, Sang-Yeol Kang, Kyoo-Ho Jung, Kyu-Ho Cho, Hyo-Sik Mun
  • Patent number: 11069768
    Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.
    Type: Grant
    Filed: February 4, 2020
    Date of Patent: July 20, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-Lim Park, Se Hyoung Ahn, Sang Yeol Kang, Chang Mu An, Kyoo Ho Jung
  • Publication number: 20200403062
    Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.
    Type: Application
    Filed: February 4, 2020
    Publication date: December 24, 2020
    Inventors: Young-Lim PARK, Se Hyoung AHN, Sang Yeol KANG, Chang Mu AN, Kyoo Ho JUNG
  • Publication number: 20200286985
    Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.
    Type: Application
    Filed: October 2, 2019
    Publication date: September 10, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Han Jin Lim, Ki Nam Kim, Hyung Suk Jung, Kyoo Ho Jung, Ki Hyun Hwang
  • Publication number: 20200127079
    Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.
    Type: Application
    Filed: June 18, 2019
    Publication date: April 23, 2020
    Inventors: EUN-SUN KIM, SANG-YEOL KANG, KYOO-HO JUNG, KYU-HO CHO, HYO-SIK MUN