Patents by Inventor Kyoshige Katayama
Kyoshige Katayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7205024Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.Type: GrantFiled: February 5, 2004Date of Patent: April 17, 2007Assignee: Tokyo Electron LimitedInventors: Kazuhiro Takeshita, Shinji Nagashima, Makoto Muramatsu, Yoji Mizutani, Kazutoshi Yano, Kyoshige Katayama
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Publication number: 20060292298Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.Type: ApplicationFiled: August 30, 2006Publication date: December 28, 2006Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuhiro Takeshita, Shinji Nagashima, Makoto Muramatsu, Yoji Mizutani, Kazutoshi Yano, Kyoshige Katayama
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Patent number: 6808567Abstract: A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.Type: GrantFiled: August 11, 2003Date of Patent: October 26, 2004Assignee: Tokyo Electron LimitedInventors: Kazuhiro Takeshita, Shinji Nagashima, Yoji Mizutani, Kyoshige Katayama
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Publication number: 20040156996Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.Type: ApplicationFiled: February 5, 2004Publication date: August 12, 2004Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuhiro Takeshita, Shinji Nagashima, Makoto Muramatsu, Yoji Mizutani, Kazutoshi Yano, Kyoshige Katayama
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Patent number: 6726775Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.Type: GrantFiled: April 24, 2003Date of Patent: April 27, 2004Assignee: Tokyo Electron LimitedInventors: Kazuhiro Takeshita, Shinji Nagashima, Makoto Muramatsu, Yoji Mizutani, Kazutoshi Yano, Kyoshige Katayama
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Publication number: 20040045184Abstract: A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.Type: ApplicationFiled: August 11, 2003Publication date: March 11, 2004Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuhiro Takeshita, Shinji Nagashima, Yoji Mizutani, Kyoshige Katayama
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Patent number: 6660096Abstract: A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.Type: GrantFiled: December 14, 2000Date of Patent: December 9, 2003Assignee: Tokyo Electron LimitedInventors: Kazuhiro Takeshita, Shinji Nagashima, Yoji Mizutani, Kyoshige Katayama
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Publication number: 20030196595Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.Type: ApplicationFiled: April 24, 2003Publication date: October 23, 2003Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuhiro Takeshita, Shinji Nagashima, Makoto Muramatsu, Yoji Mizutani, Kazutoshi Yano, Kyoshige Katayama
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Patent number: 6589339Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.Type: GrantFiled: April 26, 2001Date of Patent: July 8, 2003Assignee: Tokyo Electron LimitedInventors: Kazuhiro Takeshita, Shinji Nagashima, Makoto Muramatsu, Yoji Mizutani, Kazutoshi Yano, Kyoshige Katayama
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Patent number: 6524389Abstract: In a processing chamber for performing heat processing for a substrate, gas for purge, for example, N2 is supplied nearly parallel to the substrate placed on a hot plate with a gap forming member between them and toward both the front and rear faces of the substrate. Thus, an atmosphere around the substrate can be exchanged for the gas for purge efficiently, and moreover the atmosphere around the substrate can be exchanged uniformly. Accordingly, heat processing in a low oxygen atmosphere can be performed in a short time, and moreover the total time required for substrate processing can be shortened. Besides, heat processing in the low oxygen atmosphere can be performed uniformly.Type: GrantFiled: May 22, 2000Date of Patent: February 25, 2003Assignee: Tokyo Electron LimitedInventors: Kyoshige Katayama, Yuta Yoshimura, Takeshi Tamura
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Patent number: 6354832Abstract: In a heat processing apparatus of a low-oxygen curing and cooling processing station, a plurality of blast ports are provided in a ring shutter along a thickness direction of a wafer and a heated inert gas is supplied into a heat processing chamber via the blast ports, so that both faces of the wafer can be heated while the inside of the heat processing chamber is exchanged for the inert gas. Accordingly, heat processing for the substrate can be efficiently performed in a short period of time.Type: GrantFiled: July 27, 2000Date of Patent: March 12, 2002Assignee: Tokyo Electron LimitedInventors: Yuta Yoshimura, Kei Miyazaki, Kyoshige Katayama, Takeshi Tamura
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Publication number: 20010017103Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.Type: ApplicationFiled: April 26, 2001Publication date: August 30, 2001Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuhiro Takeshita, Shinji Nagashima, Makoto Muramatsu, Yoji Mizutani, Kazutoshi Yano, Kyoshige Katayama
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Patent number: 6248168Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.Type: GrantFiled: December 14, 1998Date of Patent: June 19, 2001Assignee: Tokyo Electron LimitedInventors: Kazuhiro Takeshita, Shinji Nagashima, Makoto Muramatsu, Yoji Mizutani, Kazutoshi Yano, Kyoshige Katayama
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Publication number: 20010000198Abstract: A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.Type: ApplicationFiled: December 14, 2000Publication date: April 12, 2001Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuhiro Takeshita, Shinji Nagashima, Yoji Mizutani, Kyoshige Katayama
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Patent number: 6190459Abstract: A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.Type: GrantFiled: December 15, 1998Date of Patent: February 20, 2001Assignee: Tokyo Electron LimitedInventors: Kazuhiro Takeshita, Shinji Nagashima, Yoji Mizutani, Kyoshige Katayama