Patents by Inventor Kyosuke HIWATASHI

Kyosuke HIWATASHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film transistor substrate and method for manufacturing the same
    Patent number: 9508750
    Abstract: A gate wiring, a source electrode, a source-electrode connecting wiring, a pixel electrode, a gate-terminal extraction electrode, and a source-terminal extraction electrode are formed in the same layer on a planarization insulating film. The gate wiring is connected to a gate electrode through a gate-electrode-portion contact hole. The source electrode is connected to a semiconductor film through a source-electrode-portion contact hole. The source-electrode connecting wiring is connected to the semiconductor film and a source wiring through the source-electrode-portion contact hole and a source-wiring-portion contact hole, respectively. The pixel electrode is connected to the semiconductor film through a drain (pixel)-electrode-portion contact hole.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: November 29, 2016
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kyosuke Hiwatashi, Kazunori Inoue, Kouji Oda, Nobuaki Ishiga, Kensuke Nagayama, Naoki Tsumura
  • THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20150162351
    Abstract: A gate wiring, a source electrode, a source-electrode connecting wiring, a pixel electrode, a gate-terminal extraction electrode, and a source-terminal extraction electrode are formed in the same layer on a planarization insulating film. The gate wiring is connected to a gate electrode through a gate-electrode-portion contact hole. The source electrode is connected to a semiconductor film through a source-electrode-portion contact hole. The source-electrode connecting wiring is connected to the semiconductor film and a source wiring through the source-electrode-portion contact hole and a source-wiring-portion contact hole, respectively. The pixel electrode is connected to the semiconductor film through a drain (pixel)-electrode-portion contact hole.
    Type: Application
    Filed: November 25, 2014
    Publication date: June 11, 2015
    Applicant: Mitsubishi Electric Corporation
    Inventors: Kyosuke HIWATASHI, Kazunori INOUE, Kouji ODA, Nobuaki ISHIGA, Kensuke NAGAYAMA, Naoki TSUMURA