Patents by Inventor Kyosuke Kuramoto

Kyosuke Kuramoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090162962
    Abstract: The invention provides a high-reliability nitride semiconductor laser that reduces the stress of a nitride dielectric film formed on a resonator's end face, thus reducing possible damage to the resonator's end face, which may occur during the formation of the nitride dielectric film. A method of manufacturing a nitride semiconductor laser according to the invention uses a nitride-based III-V compound semiconductor and includes the steps of (a) forming an adherence layer of a nitride dielectric on both a light-emitting and a light-reflecting end face of a resonator in plasma containing a nitrogen gas; and (b) forming a low-reflective and a high-reflective face-coating film of a dielectric on the adherence layers.
    Type: Application
    Filed: December 1, 2008
    Publication date: June 25, 2009
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Yosuke SUZUKI, Yasuyuki NAKAGAWA, Kyosuke KURAMOTO, Takeo SHIRAHAMA
  • Publication number: 20090146308
    Abstract: A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film is formed on the entire upper surface of the Ta film which forms part of the p electrode, and serves as an antioxidant film that prevents oxidation of the Ta film. Preventing oxidation of the Ta film, the second Pd film can reduce the resistance that may exist between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the p electrode with low resistance.
    Type: Application
    Filed: December 4, 2008
    Publication date: June 11, 2009
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Katsuomi Shiozawa, Kyozo Kanamoto, Hiroshi Kurokawa, Yasunori Tokuda, Kyosuke Kuramoto, Hitoshi Sakuma
  • Patent number: 7518162
    Abstract: A semiconductor light emitting device has a gallium nitride compound semiconductor, and a first cladding layer of a first conductivity type, an active layer, an electron barrier layer of a second conductivity type and made of InxAlyGa1-x-yN (0?x?1 and 0?y?1), and a second cladding layer of the second conductivity type, laminated, in order, on a substrate. The electron barrier layer has a larger band gap than each of the active layer and the second cladding layer. The thickness of the electron barrier layer is in a range from 2 nm to 7 nm.
    Type: Grant
    Filed: January 30, 2007
    Date of Patent: April 14, 2009
    Assignee: Mitsubishi Electric Corporation
    Inventor: Kyosuke Kuramoto
  • Publication number: 20090026489
    Abstract: A semiconductor light emitting device has an active layer of a gallium nitride compound semiconductor material, a first semiconductor layer of Inx1Aly1Ga1-x1-y1N (0?x1?1, 0?y1?1), on a p-layer side of the active layer, and which is subjected to tensile strain, a second semiconductor layer of Inx2Aly2Ga1-x2-y2N, wherein (0?x2?1, 0?y2?1), and which has a bandgap energy smaller than the bandgap energy of the first semiconductor layer, and a third semiconductor layer between the first semiconductor layer and the second semiconductor layer, of Inx3Aly3Ga1-x3-y3N, wherein (0?x3?1, 0?y3?1), and which has a bandgap energy smaller than the bandgap energy of the first semiconductor layer and larger than the bandgap energy of the second semiconductor layer.
    Type: Application
    Filed: March 17, 2006
    Publication date: January 29, 2009
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventor: Kyosuke Kuramoto
  • Publication number: 20090022195
    Abstract: A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a substrate having a high dislocation region having a dislocation density of 1×105 cm?2 or more, a crystalline semiconductors structure located on the substrate and having an active layer, an insulating film located on the semiconductors structure, a surface electrode located on the insulating film and electrically continuous with the semiconductor structure for injection of a current into the active layer, and a back electrode located on a rear surface of the substrate. The semiconductor laser has a laser resonator with a length L, and the area of the surface electrode is 120×L ?m2 or less.
    Type: Application
    Filed: March 15, 2006
    Publication date: January 22, 2009
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventor: Kyosuke Kuramoto
  • Patent number: 7471711
    Abstract: A semiconductor light emitting device including an active layer interposed between an n-type cladding layer and a p-type cladding layer employs an AlxGa1-xN (AlGaN) layer having an Al composition ratio x satisfying 0.01?x<0.06 as the n-type cladding layer. As the Al composition ratio x decreases below 0.06, the AlGaN layer increases in refractive index. Thus, the near field pattern (NFP) in the vertical direction can spread out, and full width at half maximum of FFP in the vertical direction can be minimized. Further, since lattice mismatch with a GaN substrate is reduced with decreasing Al composition ratio, the AlGaN layer can be thick without causing cracks or dislocations, and spreading of light into the GaN substrate can be minimized.
    Type: Grant
    Filed: November 1, 2005
    Date of Patent: December 30, 2008
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kyosuke Kuramoto
  • Publication number: 20080251804
    Abstract: A nitride semiconductor light-emitting device includes a p-type contact layer, a p-type intermediate layer below the p-type contact layer, and a p-type cladding layer below the p-type intermediate layer. Band gap energy differences between the p-type contact layer and the p-type intermediate layer and also between the p-type intermediate layer and the p-type cladding layer are, respectively, 200 meV or below.
    Type: Application
    Filed: November 8, 2007
    Publication date: October 16, 2008
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Akihito Ohno, Kyosuke Kuramoto
  • Publication number: 20080017878
    Abstract: A semiconductor light-emitting diode includes an electrically conductive substrate transmissive to light-emitting wavelengths, and semiconductor layers including a light-emitting layer, on the substrate. A principal-surface electrode is located on the semiconductor layers and a rear-surface electrode having an opening is located on the rear surface of the substrate. The width of the opening is L, the distance between the rear-surface electrode and the light-emitting layer is t, L?2 t, and the rear-surface electrode covers no more than 40% of the rear surface of the substrata.
    Type: Application
    Filed: July 5, 2007
    Publication date: January 24, 2008
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventor: Kyosuke Kuramoto
  • Publication number: 20070176203
    Abstract: A semiconductor light emitting device has a gallium nitride compound semiconductor, and a first cladding layer of a first conductivity type, an active layer, an electron barrier layer of a second conductivity type and made of InxAlyGa1-x-yN (0?x?1 and 0?y?1), and a second cladding layer of the second conductivity type, laminated, in orders, on a substrate. The electron barrier layer has a larger band gap than each of the active layer and the second cladding layer. The thickness of the electron barrier layer is in a range from 2 nm to 7 nm.
    Type: Application
    Filed: January 30, 2007
    Publication date: August 2, 2007
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventor: Kyosuke Kuramoto
  • Publication number: 20060193359
    Abstract: In a semiconductor laser having an active layer of double-quantum-well structure that includes two InGaN well layers each of which has a thickness of 5 nm, a threshold current deteriorates to a relatively small degree while differential efficiency is improved considerably in a region having a light confinement coefficient ? of 3.0% or less. On the other hand, with the light confinement coefficient ? becoming less than 1.5%, the threshold current increases considerably while the amount of improvement in differential efficiency becomes small. It is therefore preferable that the lowest limit to the light confinement coefficient ? be about 1.5%. The differential efficiency of 1.6 W/A or more is obtained with the light confinement coefficient ? being 3.0% or less, and the differential efficiency of 1.7 W/A or more is obtained with the light confinement coefficient ? being 2.6% or less.
    Type: Application
    Filed: January 6, 2006
    Publication date: August 31, 2006
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kyosuke Kuramoto
  • Publication number: 20060098703
    Abstract: A semiconductor light emitting device including an active layer interposed between an n-type cladding layer and a p-type cladding layer employs an AlxGa1-xN (AlGaN) layer having an Al composition ratio x satisfying 0.01?x<0.06 as the n-type cladding layer. As the Al composition ratio x decreases below 0.06, the AlGaN layer increases in refractive index. Thus, the near field pattern (NFP) in the vertical direction can spread out, and full width at half maximum of FFP in the vertical direction can be minimized. Further, since a lattice mismatch with a GaN substrate is reduced with decreasing Al composition ratio, the AlGaN layer can be formed thick without causing cracks or dislocation, and the spreading of light into the GaN substrate can be minimized.
    Type: Application
    Filed: November 1, 2005
    Publication date: May 11, 2006
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kyosuke Kuramoto
  • Publication number: 20060097242
    Abstract: The present invention provides a semiconductor light-emitting device which exhibits small threshold current, high differential efficiency and good characteristics, by reducing electrons that overflow an electron barrier for trapping the electrons in an active layer. Of barrier layers that configure an active layer 20, a final barrier layer 1, which is a barrier layer closest to a p side, is made smaller in band gap than a barrier layer 2. Thus, as compared with a case where the barrier layer 1 is made of a material having the same band gap as that of the barrier layer 2, a band discontinuous amount (electron barrier) with an electron blocking layer 3 can be made larger. As a result, it is possible to reduce electrons that overflow the electron barrier.
    Type: Application
    Filed: November 9, 2005
    Publication date: May 11, 2006
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kyosuke Kuramoto
  • Patent number: 6618411
    Abstract: A ridge waveguide semiconductor laser that is excellent in optical output characteristic and high-frequency characteristic is provided. A p-type InP cladding layer having a ridge shape is formed over a p-type AlInAs cladding layer via a p-type InP layer and a p-type GaInAsP etching stopper layer, thereby suppressing the increase in the series resistance due to discontinuous band structure between an etching stopper layer and the AlGaInAs cladding layer and reducing the threshold current of the laser. Also the InP cladding layer is formed in a ridge shape with the portion near the base thereof being splayed like a skirt, thereby keeping the p-type metal electrode from the light emitting region and suppressing the absorption loss of light due to the p-type metal electrode.
    Type: Grant
    Filed: August 4, 2000
    Date of Patent: September 9, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Tohru Takiguchi, Kyosuke Kuramoto
  • Patent number: 6472682
    Abstract: An optical modulator and a semiconductor laser device including the optical modulator, both reducing variations in the refractive index of an optical modulator or making variations negative without an increase in loss or a decrease in extinction ratio, as well as an optical communications system increasing an interval of distance at which modulated light is transmitted, by use of the optical modulator and the semiconductor laser device including the optical modulator. The optical modulator includes a semiconductor substrate of a first conductivity type; a light absorption layer on the semiconductor substrate and having a multiple quantum well structure, the multiple quantum well structure including a first well layer and second well layers. The peak wavelength of the absorption spectrum of the second well layers is shorter than the peak wavelength of the absorption spectrum of the first well layers A semiconductor cladding layer of the second conductivity type is on the light absorption layer.
    Type: Grant
    Filed: October 26, 2000
    Date of Patent: October 29, 2002
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Kyosuke Kuramoto