Abstract: A wireless in-wheel electric motor assembly having a wheel, an electric motor disposed within the wheel, the electric motor including a stator and a rotor, a receiving coil disposed within the wheel and operable to receive wirelessly transmitted energy, a first converter disposed within the wheel, electrically coupled to the receiving coil and operable to convert the wirelessly transmitted energy from the receiving coil into direct current, an inverter circuit disposed within the wheel, electrically coupled to the conversion circuit and the electric motor, and operable to power the electric motor. The wireless in-wheel electric motor assembly further includes a cooling system disposed within the wheel that includes a micro pump operable to pump coolant, a fluid line operable to pass the coolant proximate at least one of the conversion circuit and the inverter circuit, and a heat exchanger operable to receive heated coolant and dissipate heat to the environment.

Abstract: An electronics assembly includes a cooling chip structure having a device facing surface opposite a base surface and one or more sidewalls extending around a perimeter of the cooling chip structure between the device facing surface and the base surface. A plurality of fluid microchannels fluidly are coupled to a fluid inlet port and a fluid outlet port. A through substrate via extends from the base surface of the cooling chip structure to the device facing surface of the cooling chip structure, where the through substrate via intersects two or more fluid microchannels of the plurality of fluid microchannels.

Abstract: A wireless in-wheel electric motor assembly having a wheel, an electric motor disposed within the wheel, the electric motor including a stator and a rotor, a receiving coil disposed within the wheel and operable to receive wirelessly transmitted energy, a first converter disposed within the wheel, electrically coupled to the receiving coil and operable to convert the wirelessly transmitted energy from the receiving coil into direct current, an inverter circuit disposed within the wheel, electrically coupled to the conversion circuit and the electric motor, and operable to power the electric motor. The wireless in-wheel electric motor assembly further includes a cooling system disposed within the wheel that includes a micro pump operable to pump coolant, a fluid line operable to pass the coolant proximate at least one of the conversion circuit and the inverter circuit, and a heat exchanger operable to receive heated coolant and dissipate heat to the environment.

Abstract: A power electronics assembly having a semiconductor device that includes a first device surface opposite a second device surface, a semiconductor substrate layer that extends from the first device surface to a substrate-drift interface, a semiconductor drift layer that extends from the substrate-drift interface towards the second device surface, and a semiconductor fluid channel is positioned within the semiconductor substrate layer of the semiconductor device. Further, the semiconductor fluid channel includes an inner surface. Moreover, a fluid channel metallization layer is positioned along the inner surface of the semiconductor fluid channel.

Abstract: An electronics assembly includes a cooling chip structure having a device facing surface opposite a base surface and one or more sidewalls extending around a perimeter of the cooling chip structure between the device facing surface and the base surface. A plurality of fluid microchannels fluidly are coupled to a fluid inlet port and a fluid outlet port. A through substrate via extends from the base surface of the cooling chip structure to the device facing surface of the cooling chip structure, where the through substrate via intersects two or more fluid microchannels of the plurality of fluid microchannels.

Abstract: A power electronics assembly having a semiconductor device that includes a first device surface opposite a second device surface, a semiconductor substrate layer that extends from the first device surface to a substrate-drift interface, a semiconductor drift layer that extends from the substrate-drift interface towards the second device surface, and a semiconductor fluid channel is positioned within the semiconductor substrate layer of the semiconductor device. Further, the semiconductor fluid channel includes an inner surface. Moreover, a fluid channel metallization layer is positioned along the inner surface of the semiconductor fluid channel.

Abstract: An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region.

Abstract: Transient liquid phase compositions and bonding assemblies are disclosed. In one embodiment, a transient liquid phase composition includes a plurality of particles. Each particle includes a core, an inner shell surrounding the core, the inner shell, and an outer shell surrounding the inner shell. The core is made of a first high melting temperature material, the inner shell is made of a second high melting temperature material, and the outer shell is made of a low melting temperature material. The melting temperature of the low melting temperature material is less than the melting temperature of both the first and second high melting temperature materials.

Abstract: An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region.

Abstract: An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region.

Abstract: An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom body region that is formed below the floating region, a trench, a gate insulating film that covers an inner face of the trench, and a gate electrode that is arranged inside the trench. When a distribution of a concentration of p-type impurities in the top body region and the floating region, which are located below the emitter region, is viewed along a thickness direction of a semiconductor substrate, the concentration of the p-type impurities decreases as a downward distance increases from an upper end of the top body region that is located below the emitter region, and assumes a local minimum value at a predetermined depth in the floating region.

Abstract: The invention has an object to provide an insulation gate type semiconductor device and a method for producing the same in which high breakdown voltage and compactness are achieved. The semiconductor device has a gate trench and a P floating region formed in the cell area and has a terminal trench and a P floating region formed in the terminal area. In addition, a terminal trench of three terminal trenches has a structure similar to that of the gate trench, and the other terminal trenches have a structure in which an insulation substance such as oxide silicon is filled. Also, the P floating region 51 is an area formed by implanting impurities from the bottom surface of the gate trench, and the P floating region is an area formed by implanting impurities from the bottom surface of the terminal trench.

Abstract: A semiconductor 100 has a P? body region and an N? drift region in the order from an upper surface side thereof. A gate trench and a terminal trench passing through the P? body region are formed. The respective trenches are surrounded with P diffusion regions at the bottom thereof. The gate trench builds a gate electrode therein. A P?? diffusion region, which is in contact with the end portion in a lengthwise direction of the gate trench and is lower in concentration than the P? body region and the P diffusion region, is formed. The P?? diffusion region is depleted prior to the P diffusion region when the gate voltage is off. The P?? diffusion region serves as a hole supply path to the P diffusion region when the gate voltage is on.

Abstract: A semiconductor 100 has a P? body region and an N? drift region in the order from an upper surface side thereof. A gate trench and a terminal trench passing through the P? body region are formed. The respective trenches are surrounded with P diffusion regions at the bottom thereof. The gate trench builds a gate electrode therein. A P?? diffusion region, which is in contact with the end portion in a lengthwise direction of the gate trench and is lower in concentration than the P? body region and the P diffusion region, is formed. The P?? diffusion region is depleted prior to the P diffusion region when the gate voltage is off. The P?? diffusion region serves as a hole supply path to the P diffusion region when the gate voltage is on.

Abstract: The invention has an object to provide an insulation gate type semiconductor device and a method for producing the same in which high breakdown voltage and compactness are achieved. The semiconductor device has a gate trench and a P floating region formed in the cell area and has a terminal trench and a P floating region formed in the terminal area. In addition, a terminal trench of three terminal trenches has a structure similar to that of the gate trench, and the other terminal trenches have a structure in which an insulation substance such as oxide silicon is filled. Also, the P floating region 51 is an area formed by implanting impurities from the bottom surface of the gate trench, and the P floating region is an area formed by implanting impurities from the bottom surface of the terminal trench.