Patents by Inventor Kyosuke TAGUCHI

Kyosuke TAGUCHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for manufacturing same
    Patent number: 9520322
    Abstract: A semiconductor device includes a semiconductor substrate including a first surface in which an integrated circuit and an I/O pad electrically connected to the integrated circuit are formed, and a second surface which is an opposite side to the first surface, where a two-stage through-hole is formed in the semiconductor substrate, the semiconductor substrate including a first shape portion having a tapered shape which has a wall surface and of which a diameter of an opening becomes smaller toward a bottom of the hole from the second surface side to a predetermined position of the semiconductor substrate in a thickness direction, and including a second shape portion having a cylindrical shape which extends from the first shape portion to the I/O pad on the first surface side, and that includes an inorganic insulating film which is formed on the wall surface of the two-stage through-hole and the second surface.
    Type: Grant
    Filed: July 2, 2014
    Date of Patent: December 13, 2016
    Assignee: TOPPAN PRINTING CO., LTD.
    Inventors: Kenta Hayashi, Katsumi Yamamoto, Makoto Nakamura, Naoyuki Akiyama, Kyosuke Taguchi
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    Publication number: 20140312506
    Abstract: A semiconductor device includes a semiconductor substrate including a first surface in which an integrated circuit and an I/O pad electrically connected to the integrated circuit are formed, and a second surface which is an opposite side to the first surface, where a two-stage through-hole is formed in the semiconductor substrate, the semiconductor substrate including a first shape portion having a tapered shape which has a wall surface and of which a diameter of an opening becomes smaller toward a bottom of the hole from the second surface side to a predetermined position of the semiconductor substrate in a thickness direction, and including a second shape portion having a cylindrical shape which extends from the first shape portion to the I/O pad on the first surface side, and that includes an inorganic insulating film which is formed on the wall surface of the two-stage through-hole and the second surface.
    Type: Application
    Filed: July 2, 2014
    Publication date: October 23, 2014
    Applicant: TOPPAN PRINTING CO., LTD.
    Inventors: Kenta HAYASHI, Katsumi YAMAMOTO, Makoto NAKAMURA, Naoyuki AKIYAMA, Kyosuke TAGUCHI