Patents by Inventor Kyota SUGITANI

Kyota SUGITANI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing semiconductor device
    Patent number: 10892392
    Abstract: A method for manufacturing a semiconductor device includes: forming a first metal portion on a substrate, the first metal portion comprising a plurality of pores; preparing a structure body comprising a semiconductor stacked body, wherein a concave portion is provided in a first surface of the structure body; and bonding the first metal portion to the structure body, such that a first part of the first metal portion is bonded to the concave portion of the first surface, and a second part of the first metal portion is bonded to a part of the first surface other than a location where the concave portion is provided. In bonding the first metal portion to the structure body, the first metal portion is bonded to the first surface such that at least a portion of the concave portion is filled with the first metal portion.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: January 12, 2021
    Assignee: NICHIA CORPORATION
    Inventor: Kyota Sugitani
  • Method for manufacturing semiconductor device
    Patent number: 10854802
    Abstract: A method for manufacturing a semiconductor device includes: forming a first metal portion on a substrate, the first metal portion comprising a plurality of pores; preparing a structure body comprising a semiconductor stacked body, wherein a concave portion is provided in a first surface of the structure body; and bonding the first metal portion to the structure body, such that a first part of the first metal portion is bonded to the concave portion of the first surface, and a second part of the first metal portion is bonded to a part of the first surface other than a location where the concave portion is provided. In bonding the first metal portion to the structure body, the first metal portion is bonded to the first surface such that at least a portion of the concave portion is filled with the first metal portion.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: December 1, 2020
    Assignee: NICHIA CORPORATION
    Inventor: Kyota Sugitani
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20200075825
    Abstract: A method for manufacturing a semiconductor device includes: forming a first metal portion on a substrate, the first metal portion comprising a plurality of pores; preparing a structure body comprising a semiconductor stacked body, wherein a concave portion is provided in a first surface of the structure body; and bonding the first metal portion to the structure body, such that a first part of the first metal portion is bonded to the concave portion of the first surface, and a second part of the first metal portion is bonded to a part of the first surface other than a location where the concave portion is provided. In bonding the first metal portion to the structure body, the first metal portion is bonded to the first surface such that at least a portion of the concave portion is filled with the first metal portion.
    Type: Application
    Filed: August 29, 2019
    Publication date: March 5, 2020
    Applicant: NICHIA CORPORATION
    Inventor: Kyota SUGITANI