Patents by Inventor Kyouichi Takagawa

Kyouichi Takagawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 6842346
    Abstract: Disclosed is a technique capable of improving a power supply efficiency in a power supply circuit. A power MOSFET in a high side of a combined power MOSFET constituting a DC-DC converter is constituted of a horizontal MOSFET, and a power MOSFET in a low side thereof is constituted of a vertical MOSFET.
    Type: Grant
    Filed: December 23, 2003
    Date of Patent: January 11, 2005
    Assignee: Renesas Technology Corp.
    Inventors: Kyouichi Takagawa, Kozo Sakamoto, Nobuyoshi Matsuura, Masashi Koyano
  • Semiconductor device
    Publication number: 20040135248
    Abstract: Disclosed is a technique capable of improving a power supply efficiency in a power supply circuit. A power MOSFET in a high side of a combined power MOSFET constituting a DC-DC converter is constituted of a horizontal MOSFET, and a power MOSFET in a low side thereof is constituted of a vertical MOSFET.
    Type: Application
    Filed: December 23, 2003
    Publication date: July 15, 2004
    Applicant: Renesas Technology Corporation
    Inventors: Kyouichi Takagawa, Kozo Sakamoto, Nobuyoshi Matsuura, Masashi Koyano
  • Semiconductor device
    Patent number: 6700793
    Abstract: Disclosed is a technique capable of improving a power supply efficiency in a power supply circuit. A power MOSFET in a high side of a combined power MOSFET constituting a DC-DC converter is constituted of a horizontal MOSFET, and a power MOSFET in a low side thereof is constituted of a vertical MOSFET.
    Type: Grant
    Filed: January 16, 2002
    Date of Patent: March 2, 2004
    Assignee: Renesas Technology Corporation
    Inventors: Kyouichi Takagawa, Kozo Sakamoto, Nobuyoshi Matsuura, Masashi Koyano
  • Semiconductor device
    Publication number: 20020093094
    Abstract: Disclosed is a technique capable of improving a power supply efficiency in a power supply circuit. A power MOSFET in a high side of a combined power MOSFET constituting a DC-DC converter is constituted of a horizontal MOSFET, and a power MOSFET in a low side thereof is constituted of a vertical MOSFET.
    Type: Application
    Filed: January 16, 2002
    Publication date: July 18, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Kyouichi Takagawa, Kozo Sakamoto, Nobuyoshi Matsuura, Masashi Koyano
  • Compounded power MOSFET
    Patent number: 5629542
    Abstract: Provided is a compounded power MOSFET which has a high positive and negative withstand voltages for the drain terminal relative to the source terminal, and can be formed on a single chip based on the conventional fabrication process of power MOSFETs. Power MOSFETs 10 and 11 have their drains connected together, the MOSFET 10 has its source and gate used for the source terminal 0 and gate terminal 1, respectively, of the compounded power MOSFET 60, and the MOSFET 11 has its source used for the drain terminal 2. The compounded power MOSFET includes a voltage comparator 50 which drives the MOSFET 11 to turn off when the terminal 2 has a negative voltage, and a voltage transmitter 51 which is connected between the terminal 1 and the gate of the MOSFET 11 to block a current flowing from the terminal 2 to the terminal 1 by way of the circuit 50 and transfer the voltage of the terminal 1 to the gate of the MOSFET 11.
    Type: Grant
    Filed: December 13, 1995
    Date of Patent: May 13, 1997
    Assignee: Hitachi, Ltd.
    Inventors: Kozo Sakamoto, Shigeo Otaka, Kyouichi Takagawa