Patents by Inventor Kyoung Ahn

Kyoung Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8367281
    Abstract: A photoresist layer exposed through first slits of a mask is exposed using first light. The photoresist layer exposed through second slits of the mask is exposed by using second light. The first light passes thorough a transflective shutter to generate the second light.
    Type: Grant
    Filed: May 12, 2010
    Date of Patent: February 5, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Bo-Kyoung Ahn, Gug-Rae Jo, Hong-Suk Yoo, Chang-Hoon Kim, Min-Uk Kim, Joo-Han Bae
  • Publication number: 20120241636
    Abstract: The present invention relates to an apparatus for measuring a compound using a photo-ionization detector. The apparatus comprises: an ultra violet (UV) lamp (10) which is filled with a krypton gas as an inert gas and emits UV light of 10.6 eV; a photo-ionization detector (PID) unit (100) which detects a compound (50) ionized by the UV lamp; a delay unit (200) which delays the compound (50) ionized through the PID unit so as to change the ionized compound into the original compound; and a collection unit (300) for collecting the compound (50) outputted through the delay unit. Accordingly, the PID unit is connected through the delay unit to the collection unit so that the compound which is quantitatively analyzed by the PID unit can be grasped in detail by the collection unit.
    Type: Application
    Filed: May 27, 2010
    Publication date: September 27, 2012
    Inventors: Jae-Kyoung Ahn, Sang-Jun Choi
  • Publication number: 20120088196
    Abstract: An exposure apparatus includes a mask, a substrate which passes through a region disposed below the mask while moving in a first direction, a light source unit disposed above the mask, where the light source irradiates light on the substrate through the mask, and at least one blind disposed below the light source unit, where the blind blocks the light irradiated from the light source unit, where a second direction is perpendicular to the first direction in a same plane as the first direction, the blind is a polyhedron having a width, a length and a thickness and is disposed such that a direction of the length is substantially parallel to the second direction, and the blind is rotatable around a rotation axis substantially parallel to the second direction, and where the width is greater than the thickness.
    Type: Application
    Filed: March 25, 2011
    Publication date: April 12, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Bo-Kyoung AHN, Hong-Suk YOO, Chang-Hoon KIM
  • Publication number: 20120086930
    Abstract: An exposure apparatus includes a light source for providing bursts of photolithographic exposure light, a mask for applying a pattern to the photolithographic exposure light, a variable length blind for blocking parts of an exposure window from receiving the photolithographic exposure light and a blind driver for controllably driving the variable length blind. The blind includes a plurality of movable blocking plates. The blind driver includes a plurality of motors and a motor control unit which are structured to rapidly return one or more of the blocking plates through the exposure window in a time duration between the bursts of photolithographic exposure light so that a return stain is not formed on the substrate. In one embodiment, the substrate is a mother substrate having a plurality of LCD daughter substrates being formed thereon.
    Type: Application
    Filed: April 13, 2011
    Publication date: April 12, 2012
    Inventors: Chang-Hoon KIM, Bo-Kyoung Ahn, Hong-Suk Yoo
  • Publication number: 20120073597
    Abstract: Provided is a physical and chemical cleaning method, including introducing nitrogen gas, liquid nitrogen or dry ice into a cleaning solution containing at least one selected from the group consisting of water, monoethanolamine (ETA), dimethylamine (DMA), NH3, ethylenediaminetetraacetic acid (EDTA), diethylenetriaminepentaacetic acid (DTPA) and N2H2 to remove sludge. The physical and chemical cleaning method is capable of removing sludge, generated or deposited on the substrate surfaces, surfaces of constitutional parts, or gaps in various systems and instruments, more effectively. The physical and chemical cleaning method may be applied to cleaning of steam generators, boilers, heat exchangers, or the like, used in atomic power stations.
    Type: Application
    Filed: April 5, 2011
    Publication date: March 29, 2012
    Applicant: SOONCHUNHYANG UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
    Inventors: In-Hyoung RHEE, Byung-Gi PARK, Hyun-Kyoung AHN, Hyuk-Jun GWON, Chan-Ho SONG
  • Publication number: 20120013876
    Abstract: Provided are an exposure apparatus and an exposure method using the same. The exposure apparatus includes: a light source unit configured to emit light; a substrate stage supporting a substrate, the substrate comprising an exposure area and a non-exposure area; and a prism unit disposed between the light source unit and the substrate stage, the prism unit movable so as to transmit the light to the exposure area and to block the light from the non-exposure area.
    Type: Application
    Filed: April 7, 2011
    Publication date: January 19, 2012
    Inventors: Chang-Hoon Kim, Gug-Rae Jo, Hong-Suk Yoo, Bo-Kyoung Ahn
  • Publication number: 20110291052
    Abstract: Provided are an apparatus for supplying amine, including: transfer pipe through which amine is transferred; a heat wire which heats the amine that flows through the transfer pipe; a temperature control sensor which controls the temperature in the transfer pipe; and a product recovery valve which recovers product resulting from thermal decomposition of the amine, and a method for supplying amine using the same. The apparatus and method for supplying amine are capable of economically and effectively supplying amine utilizing the thermal decomposition properties of the amine, and may be used to supply amine, for example, to circulating water for power plants.
    Type: Application
    Filed: May 31, 2011
    Publication date: December 1, 2011
    Applicant: SOONCHUNHYANG UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
    Inventors: In-Hyoung RHEE, Byung-Gi PARK, Hyun-Kyoung AHN, Hyun-Jun JUNG, Eun-Sun JEONG, Hyuk-Jun GWON, Chan-ho SONG
  • Publication number: 20110124152
    Abstract: A method of manufacturing a semiconductor for a transistor that includes forming a precursor layer by coating a surface of an insulation substrate with a precursor solution for an oxide semiconductor, forming an oxide semiconductor by oxidizing a portion of the precursor layer, and removing a remaining precursor layer except for the oxide semiconductor.
    Type: Application
    Filed: July 2, 2010
    Publication date: May 26, 2011
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Bo-Kyoung AHN, Seon-Pil Jang, Gug-Rae Jo, Hong-Suk Yoo, Chang-Hoon Kim, Min-Uk Kim, Ju-Han Bae
  • Publication number: 20110100546
    Abstract: A liquid crystal layer is formed by coating a liquid crystal material having a reciprocal (Z?1) of an Ohnesorge number in a range of 4?Z?1?14 by an ink-jet printing method. The reciprocal (Z?1) of the Ohnesorge number is a dimensionless number defined as Z?1=([??L]1/2)/?.
    Type: Application
    Filed: May 4, 2010
    Publication date: May 5, 2011
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dae-Hwan JANG, Gug-Rae JO, Hong-Suk YOO, Chang-Hoon KIM, Min-Uk KIM, Joo-Han BAE, Bo-Kyoung AHN
  • Publication number: 20100308326
    Abstract: A thin-film transistor array panel includes: an insulating substrate; an oxide semiconductor layer that is formed on the insulating substrate and includes a metal inorganic salt and zinc acetate; a gate electrode overlapping with the oxide semiconductor layer; a gate insulating film that is interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode that at least partially overlap the oxide semiconductor layer and are separated from each other.
    Type: Application
    Filed: May 28, 2010
    Publication date: December 9, 2010
    Applicants: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Young-Min KIM, Bo-Sung Kim, Yeon-Taek Jeong, Tae-Young Choi, Seon-Pil Jang, Seung-Hwan Cho, Bo-Kyoung Ahn, Byeong-Soo Bae, Seok-Jun Seo
  • Publication number: 20100261105
    Abstract: A photoresist layer exposed through first slits of a mask is exposed using first light. The photoresist layer exposed through second slits of the mask is exposed by using second light. The first light passes thorough a transflective shutter to generate the second light.
    Type: Application
    Filed: May 12, 2010
    Publication date: October 14, 2010
    Inventors: Bo-Kyoung Ahn, Gug-Rae Jo, Hong-Suk Yoo, Chang-Hoon Kim, Min-Uk Kim, Joo-Han Bae
  • Patent number: 7777220
    Abstract: An organic thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode. A gate insulating layer is formed on the gate electrode and a data line is formed on the gate insulating layer, intersecting the gate line, and including a drain electrode. A source electrode is formed on the gate insulating layer and is spaced apart from the drain electrode, enclosed by the drain electrode. A bank insulating layer includes a first opening exposing the drain electrode and the source electrode and a second opening which exposes at least a portion of the source electrode. An organic semiconductor is formed in the first opening and contacts the drain electrode and the source electrode. A pixel electrode contacts the source electrode through the second opening.
    Type: Grant
    Filed: April 17, 2008
    Date of Patent: August 17, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-Young Choi, Soo-Wan Yoon, Bo-Kyoung Ahn
  • Patent number: 7727797
    Abstract: A method for manufacturing an organic thin film transistor substrate comprising forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, defining a channel region on the gate insulating layer between a source electrode and a drain electrode, neutralizing the channel region, forming a bank insulating layer on the source electrode and the drain electrode, and forming an organic semiconductor layer in a region prepared by the bank insulating layer.
    Type: Grant
    Filed: March 19, 2008
    Date of Patent: June 1, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Min Kim, Bo-Sung Kim, Bo-Kyoung Ahn
  • Publication number: 20100128190
    Abstract: Disclosed is a liquid crystal display including a first substrate, a second substrate facing the first substrate, a thin film transistor formed on the first substrate and including a semiconductor layer, a convex pattern formed on the semiconductor layer and provided at a side surface thereof with a concave-convex section, and a liquid crystal layer interposed between the first and second substrates.
    Type: Application
    Filed: April 28, 2009
    Publication date: May 27, 2010
    Inventors: Bo-Kyoung Ahn, Bo-Sung Kim, Young-Min Kim, Nam-Ok Jung, Seung-Hwan Cho
  • Publication number: 20090180044
    Abstract: A thin film transistor substrate includes a gate line arranged on a substrate, a data line arranged to cross the gate line, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode spaced apart from the source electrode, and an organic semiconductor layer forming a channel between the source electrode and the drain electrode, a pixel electrode connected to the drain electrode, and an organic passivation layer to protect the organic semiconductor layer and to receive a white light and transmit a colored light.
    Type: Application
    Filed: November 26, 2008
    Publication date: July 16, 2009
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young-Min KIM, Bo-Sung Kim, Jung-Han Shin, Tae-Young Choi, Bo-Kyoung Ahn
  • Patent number: 7550086
    Abstract: Advanced treatment method and system of ethanolamine-containing wastewater are disclosed, which perform physicochemical and biological treatment processes. The method regenerates cation exchange resin that captures ethanolamine discharged from a nuclear power plant or a thermal power station, concentrates the ethanolamine-containing wastewater to reduce the volume of the wastewater, and then treats the highly concentrated ethanolamine-containing wastewater through biological decomposition and denitrification processes. The system for treating ethanolamine-containing wastewater performs the physicochemical process (ion-exchange and resin regenerations) where the waster is concentrated, and then applies the biological process to the small amount of wastewater highly concentrated. The physicochemical process is composed of exchanging ions and eluting/concentrating ethanolamine using sodium hydroxide.
    Type: Grant
    Filed: July 27, 2007
    Date of Patent: June 23, 2009
    Inventors: In hyoung Rhee, Dae chul Cho, Byung gi Park, Hyun kyoung Ahn, Hyun jun Jung, Jun taek Hyun, Nam Soo Huh, Mi hae Yoon, Hyun kak Han
  • Publication number: 20090026444
    Abstract: An organic thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode. A gate insulating layer is formed on the gate electrode and a data line is formed on the gate insulating layer, intersecting the gate line, and including a drain electrode. A source electrode is formed on the gate insulating layer and is spaced apart from the drain electrode, enclosed by the drain electrode. A bank insulating layer includes a first opening exposing the drain electrode and the source electrode and a second opening which exposes at least a portion of the source electrode. An organic semiconductor is formed in the first opening and contacts the drain electrode and the source electrode. A pixel electrode contacts the source electrode through the second opening.
    Type: Application
    Filed: April 17, 2008
    Publication date: January 29, 2009
    Inventors: Tae-Young Choi, Soo-Wan Yoon, Bo-Kyoung Ahn
  • Publication number: 20080241990
    Abstract: A method for manufacturing an organic thin film transistor substrate comprising forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, defining a channel region on the gate insulating layer between a source electrode and a drain electrode, neutralizing the channel region, forming a bank insulating layer on the source electrode and the drain electrode, and forming an organic semiconductor layer in a region prepared by the bank insulating layer.
    Type: Application
    Filed: March 19, 2008
    Publication date: October 2, 2008
    Inventors: Young-Min KIM, Bo-Sung Kim, Bo-Kyoung Ahn
  • Publication number: 20080179241
    Abstract: Advanced treatment method and system of ethanolamine-containing wastewater are disclosed, which perform physicochemical and biological treatment processes. The method regenerates cation exchange resin that captures ethanolamine discharged from a nuclear power plant or a thermal power station, concentrates the ethanolamine-containing wastewater to reduce the volume of the wastewater, and then treats the highly concentrated ethanolamine-containing wastewater through biological decomposition and denitrification processes. The system for treating ethanolamine-containing wastewater performs the physicochemical process (ion-exchange and resin regenerations) where the waster is concentrated, and then applies the biological process to the small amount of wastewater highly concentrated. The physicochemical process is composed of exchanging ions and eluting/concentrating ethanolamine using sodium hydroxide.
    Type: Application
    Filed: July 27, 2007
    Publication date: July 31, 2008
    Inventors: In hyoung Rhee, Dae chul Cho, Byung gi Park, Hyun kyoung Ahn, Hyun jun Jung, Jun taek Hyun, Nam Soo Huh, Mi hae Yoon, Hyun kak Han
  • Publication number: 20050067732
    Abstract: The invention relates to a nanofiber web preparing apparatus and method via an electro-blown spinning. The nanofiber web preparing method comprises: feeding a polymer solution, which is dissolved into a given solvent, toward a spinning nozzle; discharging the polymer solution via the spinning nozzle, which is applied with a high voltage, while injecting compressed air via the lower end of the spinning nozzle; and collecting fiber spun in the form of a web on a grounded suction collector under the spinning nozzle, in which both of thermoplastic and thermosetting resins are applicable, solution doesn't need to be heated and insulation is readily realized.
    Type: Application
    Filed: November 20, 2002
    Publication date: March 31, 2005
    Inventors: Yong Min Kim, Kyoung Ahn, Young Sung, Rai Jang