Patents by Inventor Kyoung Chul Jang
Kyoung Chul Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9734888Abstract: A memory including a plurality of word lines to which one or more memory cells are coupled, an address storage unit suitable for storing an input address corresponding to a first external signal that is inputted at a random time, and a control unit suitable for activating a word line corresponding to the input address of the plurality of word lines in response to an active command and refreshing one or more target word lines selected using an address stored in the address storage unit when performing a refresh operation.Type: GrantFiled: February 6, 2015Date of Patent: August 15, 2017Assignee: SK Hynix Inc.Inventors: Seok-Cheol Yoon, Bo-Yeun Kim, Jae-Il Kim, Kyoung-Chul Jang
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Patent number: 9553167Abstract: A semiconductor device is disclosed. The semiconductor device comprising: a semiconductor substrate having first type conductivity and including an active region and a device isolation film, a doping layer having second type conductivity and buried in a bottom part of the semiconductor substrate of the active region, a recess formed in the semiconductor substrate, a gate electrode provided in the recess.Type: GrantFiled: August 5, 2015Date of Patent: January 24, 2017Assignee: SK Hynix Inc.Inventor: Kyoung Chul Jang
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Patent number: 9502526Abstract: A semiconductor device includes a semiconductor substrate including a trench, a gate insulation film located over a bottom and sidewall of the trench, a first gate formed over the gate insulation film and in a lower portion of the trench, a second gate formed over the first gate and in an upper portion of the trench, a multi-layered structure provided between the gate insulation film and the second gate.Type: GrantFiled: January 7, 2016Date of Patent: November 22, 2016Assignee: SK Hynix Inc.Inventor: Kyoung Chul Jang
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Publication number: 20160284818Abstract: A semiconductor device is disclosed. The semiconductor device comprising: a semiconductor substrate having first type conductivity and including an active region and a device isolation film, a doping layer having second type conductivity and buried in a bottom part of the semiconductor substrate of the active region, a recess formed in the semiconductor substrate, a gate electrode provided in the recess.Type: ApplicationFiled: August 5, 2015Publication date: September 29, 2016Inventor: Kyoung Chul JANG
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Publication number: 20160118474Abstract: A semiconductor device includes a semiconductor substrate including a trench, a gate insulation film located over a bottom and sidewall of the trench, a first gate formed over the gate insulation film and in a lower portion of the trench, a second gate formed over the first gate and in an upper portion of the trench, a multi-layered structure provided between the gate insulation film and the second gate.Type: ApplicationFiled: January 7, 2016Publication date: April 28, 2016Inventor: Kyoung Chul JANG
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Patent number: 9287374Abstract: A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes an active region, a device isolation film, a first liner nitride film disposed over a lower portion of a sidewall of the active region, and a second liner nitride film disposed over an upper portion of the sidewall of the active region and having a higher density of nitrogen than a density of nitrogen in the first liner nitride film.Type: GrantFiled: June 25, 2014Date of Patent: March 15, 2016Assignee: SK HYNIX INC.Inventors: Yu Jun Lee, Kyoung Chul Jang
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Patent number: 9269780Abstract: A semiconductor device includes a semiconductor substrate including a trench, a gate insulation film located over a bottom and sidewall of the trench, a first gate formed over the gate insulation film and in a lower portion of the trench, a second gate formed over the first gate and in an upper portion of the trench, a multi-layered structure provided between the gate insulation film and the second gate.Type: GrantFiled: September 24, 2014Date of Patent: February 23, 2016Assignee: SK Hynix Inc.Inventor: Kyoung Chul Jang
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Publication number: 20150279950Abstract: A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes an active region, a device isolation film, a first liner nitride film disposed over a lower portion of a sidewall of the active region, and a second liner nitride film disposed over an upper portion of the sidewall of the active region and having a higher density of nitrogen than a density of nitrogen in the first liner nitride film.Type: ApplicationFiled: June 25, 2014Publication date: October 1, 2015Inventors: Yu Jun LEE, Kyoung Chul JANG
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Publication number: 20150263111Abstract: A semiconductor device includes a semiconductor substrate including a trench, a gate insulation film located over a bottom and sidewall of the trench, a first gate formed over the gate insulation film and in a lower portion of the trench, a second gate formed over the first gate and in an upper portion of the trench, a multi-layered structure provided between the gate insulation film and the second gate.Type: ApplicationFiled: September 24, 2014Publication date: September 17, 2015Inventor: Kyoung Chul JANG
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Publication number: 20150162071Abstract: A memory including a plurality of word lines to which one or more memory cells are coupled, an address storage unit suitable for storing an input address corresponding to a first external signal that is inputted at a random time, and a control unit suitable for activating a word line corresponding to the input address of the plurality of word lines in response to an active command and refreshing one or more target word lines selected using an address stored in the address storage unit when performing a refresh operation.Type: ApplicationFiled: February 6, 2015Publication date: June 11, 2015Inventors: Seok-Cheol YOON, Bo-Yeun KIM, Jae-Il KIM, Kyoung-Chul JANG
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Patent number: 8835259Abstract: Provided are a transistor of a semiconductor device and a method for manufacturing the same. A gate induced drain leakage (GIDL) current is reduced by decreasing a work function at an upper portion of a gate electrode, and a threshold voltage of the transistor is maintained by maintaining a work function at a lower portion of the gate electrode at a high level, thereby reducing a leakage current of the transistor and reducing a read time and a write time of the semiconductor device. The transistor of the semiconductor device includes: a recess with a predetermined depth in a semiconductor substrate; a first gate electrode disposed within the recess; and a second gate electrode disposed on the first gate electrode into which ions of one or more of nitrogen (N), oxygen (O), arsenic (As), aluminum (Al), and hydrogen (H) are doped.Type: GrantFiled: August 6, 2013Date of Patent: September 16, 2014Assignee: SK Hynix Inc.Inventor: Kyoung Chul Jang
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Publication number: 20130316524Abstract: Provided are a transistor of a semiconductor device and a method for manufacturing the same. A gate induced drain leakage (GIDL) current is reduced by decreasing a work function at an upper portion of a gate electrode, and a threshold voltage of the transistor is maintained by maintaining a work function at a lower portion of the gate electrode at a high level, thereby reducing a leakage current of the transistor and reducing a read time and a write time of the semiconductor device. The transistor of the semiconductor device includes: a recess with a predetermined depth in a semiconductor substrate; a first gate electrode disposed within the recess; and a second gate electrode disposed on the first gate electrode into which ions of one or more of nitrogen (N), oxygen (O), arsenic (As), aluminum (Al), and hydrogen (H) are doped.Type: ApplicationFiled: August 6, 2013Publication date: November 28, 2013Applicant: SK HYNIX INC.Inventor: Kyoung Chul JANG
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Patent number: 8546858Abstract: The present invention relates to a semiconductor device and a method for manufacturing the same. According to the present invention, a method of manufacturing a semiconductor device includes: forming a recess on a semiconductor substrate; forming a first gate electrode material and a hard mask layer on an entire surface including the recess; etching the hard mask layer and the first gate electrode material to form the first gate electrode pattern on a lower portion of inside of the recess; forming a second gate electrode material on an entire surface including the recess; and etching the second gate electrode material and separating the second gate electrode material.Type: GrantFiled: August 28, 2012Date of Patent: October 1, 2013Assignee: Hynix Semiconductor Inc.Inventor: Kyoung Chul Jang
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Patent number: 8530962Abstract: Provided are a transistor of a semiconductor device and a method for manufacturing the same. A gate induced drain leakage (GIDL) current is reduced by decreasing a work function at an upper portion of a gate electrode, and a threshold voltage of the transistor is maintained by maintaining a work function at a lower portion of the gate electrode at a high level, thereby reducing a leakage current of the transistor and reducing a read time and a write time of the semiconductor device. The transistor of the semiconductor device includes: a recess with a predetermined depth in a semiconductor substrate; a first gate electrode disposed within the recess; and a second gate electrode disposed on the first gate electrode into which ions of one or more of nitrogen (N), oxygen (O), arsenic (As), aluminum (Al), and hydrogen (H) are doped.Type: GrantFiled: July 19, 2010Date of Patent: September 10, 2013Assignee: Hynix Semiconductor IncInventor: Kyoung Chul Jang
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Publication number: 20120319195Abstract: The present invention relates to a semiconductor device and a method for manufacturing the same. According to the present invention, a method of manufacturing a semiconductor device includes: forming a recess on a semiconductor substrate; forming a first gate electrode material and a hard mask layer on an entire surface including the recess; etching the hard mask layer and the first gate electrode material to form the first gate electrode pattern on a lower portion of inside of the recess; forming a second gate electrode material on an entire surface including the recess; and etching the second gate electrode material and separating the second gate electrode material.Type: ApplicationFiled: August 28, 2012Publication date: December 20, 2012Applicant: Hynix Semiconductor Inc.Inventor: Kyoung Chul JANG
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Patent number: 8278201Abstract: According to the present invention, a method of manufacturing a semiconductor device includes forming a recess on a semiconductor substrate, forming a first gate electrode material and a hard mask layer on an entire surface including the recess, etching the hard mask layer and the first gate electrode material to form the first gate electrode pattern on a lower portion of inside of the recess, forming a second gate electrode material on an entire surface including the recess, and etching the second gate electrode material and separating the second gate electrode material.Type: GrantFiled: July 30, 2010Date of Patent: October 2, 2012Assignee: Hynix Semiconductor IncInventor: Kyoung Chul Jang
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Publication number: 20110260242Abstract: Provided are a transistor of a semiconductor device and a method for manufacturing the same. A gate induced drain leakage (GIDL) current is reduced by decreasing a work function at an upper portion of a gate electrode, and a threshold voltage of the transistor is maintained by maintaining a work function at a lower portion of the gate electrode at a high level, thereby reducing a leakage current of the transistor and reducing a read time and a write time of the semiconductor device. The transistor of the semiconductor device includes: a recess with a predetermined depth in a semiconductor substrate; a first gate electrode disposed within the recess; and a second gate electrode disposed on the first gate electrode into which ions of one or more of nitrogen (N), oxygen (O), arsenic (As), aluminum (Al), and hydrogen (H) are doped.Type: ApplicationFiled: July 19, 2010Publication date: October 27, 2011Applicant: Hynix Semiconductor Inc.Inventor: Kyoung Chul JANG
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Publication number: 20110180868Abstract: The present invention relates to a semiconductor device and a method for manufacturing the same. According to the present invention, a method of manufacturing a semiconductor device includes: forming a recess on a semiconductor substrate; forming a first gate electrode material and a hard mask layer on an entire surface including the recess; etching the hard mask layer and the first gate electrode material to form the first gate electrode pattern on a lower portion of inside of the recess; forming a second gate electrode material on an entire surface including the recess; and etching the second gate electrode material and separating the second gate electrode material.Type: ApplicationFiled: July 30, 2010Publication date: July 28, 2011Applicant: Hynix Semiconductor Inc.Inventor: Kyoung Chul JANG