Patents by Inventor Kyoung-Chul Kim

Kyoung-Chul Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11024227
    Abstract: A pixel includes a plurality of transistors, a storage capacitor, and an organic light emitting diode. A first transistor controls the amount of current from a first driving power source to the organic light emitting diode based on a data voltage. A second transistor is connected to a data line and is turned on based on a scan signal. A third transistor coupled to the first transistor and is turned on based on the scan signal. A first stabilizing transistor is coupled to the third transistor or between the first and third transistors and is turned off when the third transistor is turned off.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: June 1, 2021
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Chong Chul Chai, Dong Woo Kim, Kyoung Ju Shin, Bo Yong Chung
  • Patent number: 11001274
    Abstract: An apparatus for automatically controlling a driving assist function of a vehicle includes a sensing device to sense surrounding information and driving information of the vehicle and a state of a driver, a controller to determine whether an automatic activation condition for automatically activating the driving assist function is satisfied, based on the surrounding information and the driving information of the vehicle, which are acquired from the sensing device, and the sensed driver state, and automatically activate the driving assist function when the automatic activation condition is satisfied.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: May 11, 2021
    Assignees: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATION
    Inventors: Dong Gu Lee, Kyoung Jun Lee, Doo Jin Um, Dong Eon Oh, Hyun Jae Yoo, Beom Jun Kim, Dae Young Kim, Young Min Han, Seung Geon Moon, Sung Woo Choi, Chan Il Park, Sung Yoon Yeo, Hoi Won Kim, Min Chul Kang
  • Patent number: 10998906
    Abstract: A logic function device according to an embodiment of the present invention includes one or more function reconfiguring units having magnetization in one direction set by spin torque caused due to an function reconfiguring current, and an output terminal formed at an end thereof; and one or more input units formed on the function reconfiguring unit and having magnetization in the one direction set by spin torque caused due to an input current, wherein an output voltage of the output terminal is determined on the basis of whether a magnetization direction of the function reconfiguring unit and a magnetization direction of the input unit are parallel or anti-parallel.
    Type: Grant
    Filed: January 28, 2020
    Date of Patent: May 4, 2021
    Inventors: Kyoung Whan Kim, Dong Soo Han, Byoung Chul Min, Seok Min Hong, Hyun Cheol Koo, Hyung Jun Kim, Tae Eon Park, Ouk Jae Lee
  • Publication number: 20210126639
    Abstract: A logic function device according to an embodiment of the present invention includes one or more function reconfiguring units having magnetization in one direction set by spin torque caused due to an function reconfiguring current, and an output terminal formed at an end thereof; and one or more input units formed on the function reconfiguring unit and having magnetization in the one direction set by spin torque caused due to an input current, wherein an output voltage of the output terminal is determined on the basis of whether a magnetization direction of the function reconfiguring unit and a magnetization direction of the input unit are parallel or anti-parallel.
    Type: Application
    Filed: January 28, 2020
    Publication date: April 29, 2021
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Kyoung Whan Kim, Dong Soo Han, Byoung Chul Min, Seok Min Hong, Hyun Cheol Koo, Hyung Jun Kim, Tae Eon Park, Ouk Jae Lee
  • Publication number: 20210098719
    Abstract: The present invention provides the compound represented by Formula 1, an organic electric element comprising a first electrode, a second electrode, and an organic material layer formed between the first electrode and the second electrode, and electronic device thereof, and by employing the compound represented by Formula 1 in the organic material layer, the driving voltage of the organic electric element can be lowered, and the luminous efficiency and life time of the electric element can be improved.
    Type: Application
    Filed: December 17, 2018
    Publication date: April 1, 2021
    Applicant: DUK SAN NEOLUX CO., LTD.
    Inventors: Jong Gwang PARK, Yun Suk LEE, Jung Hwan PARK, Kyoung Chul KIM, Sun Hee LEE, Bum Sung LEE
  • Publication number: 20200152874
    Abstract: Provided in the present invention are a compound capable of improving high luminous efficiency, low driving voltage, and a service life of a device; and organic electric device using the same; and an electronic device thereof.
    Type: Application
    Filed: June 1, 2018
    Publication date: May 14, 2020
    Inventors: Jong Gwang PARK, Yun Suk LEE, Yu Ri KIM, Yeon Hee CHOI, Kyoung Chul KIM
  • Publication number: 20200136052
    Abstract: The present disclosure provides: a compound capable of enabling high luminous efficiency, a low driving voltage, and an improved lifetime of an element; an organic electric element using the same; and an electronic device thereof.
    Type: Application
    Filed: March 9, 2018
    Publication date: April 30, 2020
    Inventors: Ki Ho SO, Yun Suk LEE, Jong Gwang PARK, Yeon Hee CHOI, Kyoung Chul KIM
  • Patent number: 10047491
    Abstract: Provided is a ground reinforcement structure installed on a ground (10) in which a sandy soil layer (11) having a weak surface layer is provided and thus large-caliber excavation is difficult to be performed, the ground reinforcement structure including a ground reinforcement material (100) including: an expansion-type steel pipe (110) inserted to be installed in a small-caliber drilled portion (A) having a diameter of 51 mm to 61 mm and expanded by hydraulic pressure; and a settlement member (120) coupled to a rear end of the expansion-type steel pipe (110). Here, the expansion-type steel pipe (110) is inserted into the sandy soil layer (11), and the settlement member (120) is inserted into a rock layer (12). In this case, the settlement member (120) of the ground reinforcement structure according to the present invention is fixed to the rock layer (12), fixing force is excellent.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: August 14, 2018
    Assignee: KOLON GLOBAL CORPORATION
    Inventors: Kyoung Chul Kim, Se Jin Kim, Sung Gon Son, Jae Seo Choi, Sang Heon Choi
  • Publication number: 20180100280
    Abstract: Provided is a ground reinforcement structure installed on a ground (10) in which a sandy soil layer (11) having a weak surface layer is provided and thus large-caliber excavation is difficult to be performed, the ground reinforcement structure including a ground reinforcement material (100) including: an expansion-type steel pipe (110) inserted to be installed in a small-caliber drilled portion (A) having a diameter of 51 mm to 61 mm and expanded by hydraulic pressure; and a settlement member (120) coupled to a rear end of the expansion-type steel pipe (110). Here, the expansion-type steel pipe (110) is inserted into the sandy soil layer (11), and the settlement member (120) is inserted into a rock layer (12). In this case, the settlement member (120) of the ground reinforcement structure according to the present invention is fixed to the rock layer (12), fixing force is excellent.
    Type: Application
    Filed: December 20, 2016
    Publication date: April 12, 2018
    Applicant: KOLON GLOBAL CORPORATION
    Inventors: Kyoung Chul KIM, Se Jin KIM, Sung Gon SON, Jae Seo CHOI, Sang Heon CHOI
  • Patent number: 9435321
    Abstract: The present invention provides a seawater resistant grout material composition and a method for constructing an offshore wind turbine structure using the same, the seawater resistant grout material composition comprising: 2˜10 wt % of high strength admixture; 25˜35 wt % of type I Portland cement; 30˜45 wt % of silica sand having a particle size of 30˜60 mesh; 5˜15 wt % of silica sand having a particle size of 60˜100 mesh; and 5˜10 wt % of silica sand having a particle size of 100˜200 mesh, wherein the high strength admixture is obtained by mixing and pulverizing 45˜99 wt % of slag and 1˜55 wt % of anhydrite, thus the present invention has excellent seawater resistance, excellent strength development characteristics at a low temperature, and increased compressive strength and durability to allow withstanding cyclic loads due to wind and wave pressure.
    Type: Grant
    Filed: July 8, 2013
    Date of Patent: September 6, 2016
    Assignee: KOLON GLOBAL CORPORATION
    Inventors: Kyoung Chul Kim, Se Jin Kim, Jae Uk Sim
  • Publication number: 20160108897
    Abstract: The present invention provides a seawater resistant grout material composition and a method for constructing an offshore wind turbine structure using the same, the seawater resistant grout material composition comprising: 2˜10 wt % of high strength admixture; 25˜35 wt % of type I Portland cement; 30˜45 wt % of silica sand having a particle size of 30˜60 mesh; 5˜15 wt % of silica sand having a particle size of 60˜100 mesh; and 5˜10 wt % of silica sand having a particle size of 100˜200 mesh, wherein the high strength admixture is obtained by mixing and pulverizing 45˜99 wt % of slag and 1˜55 wt % of anhydrite, thus the present invention has excellent seawater resistance, excellent strength development characteristics at a low temperature, and increased compressive strength and durability to allow withstanding cyclic loads due to wind and wave pressure.
    Type: Application
    Filed: July 8, 2013
    Publication date: April 21, 2016
    Applicant: KOLON GLOBAL CORPORATION
    Inventors: Kyoung Chul KIM, Se Jin KIM, Jae Uk SIM
  • Publication number: 20080220375
    Abstract: In a method of reworking a substrate, an organic anti-reflection coating (ARC) layer is formed on the substrate having an amorphous carbon pattern. A photoresist pattern is formed on the organic ARC layer. The photoresist pattern is entirely exposed when the photoresist pattern has a selected level of defects, and then the photoresist pattern is removed by a developing process. The substrate may be reworked without damaging the organic ARC layer, and the amorphous carbon pattern may include an alignment key and/or an overlay key.
    Type: Application
    Filed: March 4, 2008
    Publication date: September 11, 2008
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-Chul Kim, Bong-Chan Kim, In-Seak Hwang, Kwang-Wook Lee
  • Publication number: 20070298596
    Abstract: In a method of removing a photoresist pattern, a photoresist pattern may be formed on an object layer. Impurities may be implanted into the object layer by a first ion implantation process employing the first photoresist pattern as a first ion implantation mask. The photoresist pattern hardened by the first ion implantation process may be transformed into a first water-soluble photoresist pattern. The water-soluble photoresist pattern may be removed from the object layer.
    Type: Application
    Filed: June 15, 2007
    Publication date: December 27, 2007
    Inventors: Keum-Joo Lee, Kyoung-Chul Kim, Byoung-Yong Gwak
  • Publication number: 20060270241
    Abstract: In a method of removing a photoresist pattern from a substrate without deteriorating a lower electrode or increasing processing time, ozone gas may be provided onto a substrate on which a photoresist pattern may be formed. An oxidation-decomposition process may be carried out using the ozone gas, to thereby decompose the photoresist pattern on the substrate. The decomposed photoresist pattern may be dissolved into water and removed from the substrate in a rinsing process. Accordingly, a photoresist pattern in an opening having a relatively high aspect ratio may be sufficiently removed from a substrate without deteriorating the lower electrode or increasing processing time.
    Type: Application
    Filed: May 30, 2006
    Publication date: November 30, 2006
    Inventors: Kyoung-Chul Kim, Dae-Keun Kang, Se-Ho Cha, In-Seak Hwang, Keum-Joo Lee
  • Publication number: 20040242015
    Abstract: Etching compositions for selectively etching silicon germanium faster than other silicon containing compositions may be produced by controlling the ratios of de-ionized water used in the etching compositions with respect to the amounts of nitric acid, hydrofluoric acid, and/or acetic acid. Methods for selectively etching silicon germanium without damaging a silicon substrate or a silicon layer are possible using the etching compositions.
    Type: Application
    Filed: March 4, 2004
    Publication date: December 2, 2004
    Inventors: Kyoung-Chul Kim, Dong-Gun Park, Yong-Sun Ko, In-Seak Hwang, Byoung-Moon Yoon, Sung-Min Kim, Jeong-Dong Choe