Abstract: An apparatus, in accordance with one embodiment, includes a superjunction device having a voltage sustaining layer formed of a semiconductor material and a dopant in the voltage sustaining layer. The dopant is for distributing an electric field within the voltage sustaining layer. The dopant is more concentrated along a sidewall of the voltage sustaining layer than toward a center of the voltage sustaining layer, the sidewall extending at least a portion of the distance between a top surface and a bottom surface of a voltage sustaining layer. Methods of electric field-enhanced dopant diffusion to form a superjunction device are also presented.

Abstract: A method includes at least partially submerging a substrate in a colloidal mixture of nanocrystals and a first solvent. The nanocrystals have first ligands coupled thereto. The method also includes applying an electric field to the colloidal mixture to form a solvated nanocrystal film and removing the solvated nanocrystal film from the first solvent. The method further includes applying a second solvent to the solvated nanocrystal film for ligand exchange. The second solvent comprises second ligands. A nanocrystal film product formed by one-step ligand exchange includes at least one dimension greater than 100 nm and ordered nanocrystals characterized as having a domain size of greater than 100 nm.

Abstract: An apparatus includes a heterostructure including a substrate of Group-III-nitride material, a source layer including a dopant positioned on a surface of the substrate, and a conductive cap layer positioned on the source layer. A method of electric field-enhanced impurity diffusion includes obtaining a heterostructure including a substrate of Group-III-nitride semiconductor material, a source layer including a dopant positioned directly on the substrate, and a conductive cap layer positioned above the source layer, and applying a thermal annealing treatment to the heterostructure. An electric field gradient is established within the source layer and the cap layer for causing diffusion of an element from the substrate to the cap layer, and for causing diffusion of the dopant from the source layer to a former location of the element in the substrate thereby changing a conductivity and/or magnetic characteristic of the substrate.