Patents by Inventor Kyoung-Eun Uhn

Kyoung-Eun Uhn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME
    Publication number: 20140035017
    Abstract: A nonvolatile memory device has a first active region and a second active region defined in a substrate by a device isolation layer, a Metal Oxide Silicon Field-Effect Transistor (MOSFET) disposed on the first active region and including a first electrode pattern, and a Metal Oxide Silicon (MOS) capacitor disposed on the second active region and including a second electrode pattern, and in which the first electrode pattern is narrower in the widthwise direction of the channel of the MOSFET than the first active region.
    Type: Application
    Filed: October 10, 2013
    Publication date: February 6, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Oh-Kyum Kwon, Tae-Jung Lee, Kyoung-Eun Uhn, Byung-Sun Kim
  • Nonvolatile memory device and method of forming the same
    Patent number: 8587045
    Abstract: A nonvolatile memory device has a first active region and a second active region defined in a substrate by a device isolation layer, a Metal Oxide Silicon Field-Effect Transistor (MOSFET) disposed on the first active region and including a first electrode pattern, and a Metal Oxide Silicon (MOS) capacitor disposed on the second active region and including a second electrode pattern, and in which the first electrode pattern is narrower in the widthwise direction of the channel of the MOSFET than the first active region.
    Type: Grant
    Filed: July 13, 2011
    Date of Patent: November 19, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Oh-Kyum Kwon, Tae-Jung Lee, Kyoung-Eun Uhn, Byung-Sun Kim
  • NONVOLATILE MEMORY DEVICE AND METHOD OF FORMING THE SAME
    Publication number: 20120037971
    Abstract: A nonvolatile memory device has a first active region and a second active region defined in a substrate by a device isolation layer, a Metal Oxide Silicon Field-Effect Transistor (MOSFET) disposed on the first active region and including a first electrode pattern, and a Metal Oxide Silicon (MOS) capacitor disposed on the second active region and including a second electrode pattern, and in which the first electrode pattern is narrower in the widthwise direction of the channel of the MOSFET than the first active region.
    Type: Application
    Filed: July 13, 2011
    Publication date: February 16, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Oh-Kyum Kwon, Tae-Jung Lee, Kyoung-Eun Uhn, Byung-Sun Kim