Abstract: A semiconductor device comprises a substrate, a channel region, and a gate formed in association with the channel region. In one exemplary embodiment, the gate comprises a first material that is formed void free on an interior surface of a gate trench of the gate. A width of the gate trench comprises between about 8 nm and about 65 nm. The gate comprises a transition metal alloyed with carbon, aluminum or nitrogen, or combinations thereof, to form a carbide, a nitride, or a carbo-nitride, or combinations thereof, of the transition metal. In another exemplary embodiment, the gate further comprises a second material formed void free on an interior surface of the first material and comprises a transition metal alloyed with carbon, aluminum or nitrogen, or combinations thereof, to form a carbide, a nitride, or a carbo-nitride, or combinations thereof, of the transition metal.

Abstract: A bus interface logic integrated circuit having a function of bus interfacing a system bus with a higher-order module, including a programmable chip connected between the system bus and the higher-order module and adapted to bus interface the system bus and the higher-order module with each other, the programmable chip initiating transmission and receipt of data under a control of the higher-order module.

Abstract: A washing machine includes a tub in which a basket and agitator are mounted. A transmission produces rotation of the basket and oscillation of the agitator. A shaft transmits rotary motion to the transmission from a motor via a pulley mounted on the shaft. The transmission includes a housing having heat conducting openings. Blades are mounted on the pulley for forcing air through the openings during rotation of the shaft.