Abstract: A semiconductor device including a vertical transistor and a method for forming the same are disclosed, which can greatly reduce a cell area as compared to a conventional layout of 8F2 and 6F2, and need not form a bit line contact, a storage node contact, or a land plug, such that the number of fabrication steps is reduced and a contact region between the bit line and the active region is increased in size. The semiconductor device including a vertical transistor includes an active region formed over a semiconductor substrate, a first recess formed to have a predetermined depth at both sides of the active region, and a bit line buried in the first recess.

Abstract: A semiconductor device including a vertical transistor and a method for manufacturing the same may reduce a cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require forming a bit line contact, a storage node contact or a landing plug, thereby decreasing the process steps. The semiconductor device including a vertical transistor comprises: an active region formed in a semiconductor substrate; a bit line disposed in the lower portion of the active region; a word line buried in the active region; and a capacitor disposed over the upper portion of the active region and the word line.

Abstract: An apparatus and method for obtaining information on Bluetooth devices in a computing device using Bluetooth are provided. The method includes, if an Inquiry Response (IR) packet is received as a response to an inquiry packet, obtaining information on a first Bluetooth device transmitting the IR packet and determining whether a supplementary response indication field is enabled and, if the supplementary response indication field is enabled, receiving an Extended Inquiry Response (EIR) packet, and obtaining information on at least one Bluetooth device other than the first Bluetooth device through the EIR packet.

Abstract: A semiconductor device capable of maximizing a channel area in a pillar and a method of manufacturing the same are provided. The semiconductor device includes a pillar disposed on a semiconductor substrate and having first to fourth side surfaces, a first bit line disposed in the first side surface, a storage node junction region disposed in the third side surface facing the first side surface, and a gate disposed in the second side surface or a fourth side surface facing the second surface.

Abstract: A semiconductor device including a vertical transistor and a method for manufacturing the same may reduce a cell area in comparison with a conventional layout of 8F2 and 6F2. Also, the method does not require forming a bit line contact, a storage node contact or a landing plug, thereby decreasing the process steps. The semiconductor device including a vertical transistor comprises: an active region formed in a semiconductor substrate; a bit line disposed in the lower portion of the active region; a word line buried in the active region; and a capacitor disposed over the upper portion of the active region and the word line.

Abstract: An apparatus and method for obtaining information on Bluetooth devices in a computing device using Bluetooth are provided. The method includes, if an Inquiry Response (IR) packet is received as a response to an inquiry packet, obtaining information on a first Bluetooth device transmitting the IR packet and determining whether a supplementary response indication field is enabled and, if the supplementary response indication field is enabled, receiving an Extended Inquiry Response (EIR) packet, and obtaining information on at least one Bluetooth device other than the first Bluetooth device through the EIR packet.