Patents by Inventor Kyoung Hoon Yang
Kyoung Hoon Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240147845Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.Type: ApplicationFiled: December 6, 2023Publication date: May 2, 2024Inventors: Kyoung-Jin PARK, Tae-Jin LEE, Jae-Hoon SHIM, Yoo Jin DOH, Hee-Choon AHN, Young-Kwang KIM, Doo-Hyeon MOON, Jeong-Eun YANG, Su-Hyun LEE, Chi-Sik KIM, Ji-Song JUN
-
Patent number: 11917907Abstract: The present disclosure relates to an organic electroluminescent device. The organic electroluminescent device of the present disclosure shows high luminous efficiency and good lifespan by comprising a specific combination of the plural kinds of host compounds and a specific hole transport compound.Type: GrantFiled: November 22, 2021Date of Patent: February 27, 2024Assignee: Rohm and Haas Electronic Materials Korea Ltd.Inventors: Kyoung-Jin Park, Tae-Jin Lee, Jae-Hoon Shim, Yoo Jin Doh, Hee-Choon Ahn, Young-Kwang Kim, Doo-Hyeon Moon, Jeong-Eun Yang, Su-Hyun Lee, Chi-Sik Kim, Ji-Song Jun
-
Patent number: 9264633Abstract: An image sensor includes a light-electron conversion unit, a signal generation unit, and a selection unit. The light-electron conversion unit generates photo-charges from incident light. The signal generation unit accumulates photo-charges from the converter in a storage node during a detection period, and then generates a first analog signal and a second analog signal during an output period. The analog signals are generated based on an amount of photo-charges accumulated in the storage node. The selection unit generates an image signal based on one of the first analog signal and the second analog signal.Type: GrantFiled: March 21, 2014Date of Patent: February 16, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyung-Jin Bae, Kyoung-Hoon Yang, Ji-Won Lee, Eun-Sub Shim, Moo-Sup Lim
-
Publication number: 20140313416Abstract: An image sensor includes a light-electron conversion unit, a signal generation unit, and a selection unit. The light-electron conversion unit generates photo-charges from incident light. The signal generation unit accumulates photo-charges from the converter in a storage node during a detection period, and then generates a first analog signal and a second analog signal during an output period. The analog signals are generated based on an amount of photo-charges accumulated in the storage node. The selection unit generates an image signal based on one of the first analog signal and the second analog signal.Type: ApplicationFiled: March 21, 2014Publication date: October 23, 2014Applicants: SAMSUNG ELECTRONICS CO., LTD., KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Hyung-Jin BAE, Kyoung-Hoon YANG, Ji-Won LEE, Eun-Sub SHIM, Moo-Sup LIM
-
Patent number: 7816972Abstract: Disclosed herein is a multiplexer circuit. The multiplexer circuit includes a first differential output unit, a second differential output unit, and a selection unit. The first differential output unit receives NRZ input signals (D1 and D1) and a clock signal (CLK), and generates differential RZ-mode outputs (R1 and R1). The second differential output unit receives NRZ input signals (D2 and D2) and an inverted clock signal ( CLK), and generates differential RZ-mode outputs (R2 and R2). The selection unit receives the RZ-mode output signals (R1, R1, R2, and R2) generated at the first differential output unit and the second differential output unit, and generates NRZ mode outputs in each half cycle of the clock signal (CLK).Type: GrantFiled: November 20, 2007Date of Patent: October 19, 2010Assignee: Korea Advanced Institute of Science and TechnologyInventors: Kyoung Hoon Yang, Tae Ho Kim
-
Patent number: 7781719Abstract: A new photogate pixel structure for high performance CMOS Image Sensors is proposed. A new photogate structure is incorporated into the photodiode active-pixel structure. The proposed pixel structure exhibits the dynamic integration capacitance characteristics, which can be controlled by varying the control-voltage at the photogate node. Since the sensitivity is inversely proportional to the integration capacitance, the dynamic integration capacitance characteristics can provide the new functionality and controllability for high sensitivity and high dynamic range. At a low voltage level of the photogate, the pixel sensitivity of the new photogate pixel structure is maximized due to the minimum value of the integration capacitance. At a high voltage of the photogate, the dynamic range of the new structure can be maximized due to the increased well capacity. In addition, at an optimum bias voltage of the photogate, both the dynamic-range and the sensitivity can be simultaneously improved.Type: GrantFiled: August 10, 2006Date of Patent: August 24, 2010Assignee: Korea Advanced Institute of Science and TechnologyInventors: Kyoung-Hoon Yang, Sung-Sik Lee
-
Patent number: 7741880Abstract: A data receiver and a data receiving method in which the data receiver generates two comparison signals based on amplitude modulated differential input signals, amplifies the comparison signals, compares amplified signals, and outputs logic operation results based on the amplitude modulated differential input signals and the comparison signals, thereby detecting data bits. Accordingly, the number of necessary amplifiers and comparators is reduced and a separate reference voltage generator is not needed, so that chip size reduction and low-power operation is accomplished.Type: GrantFiled: February 22, 2007Date of Patent: June 22, 2010Assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and TechnologyInventors: Young-su Cha, Kyoung-Hoon Yang
-
Patent number: 7573017Abstract: Disclosed herein is an active pixel sensor having a first transistor amplifying voltage generated in response to light at an integration node; a second transistor selects a specific pixel from a pixel array; a third transistor resets voltage of the integration node to voltage supplied from VDD during a reset period; a fourth transistor connects a photogate capacitance to the integration node increasing a dynamic range when the voltage of the integration node is VDD-Vth; a fifth transistor generates a signal voltage in a logarithmic response to light when the voltage of the integration node is logarithmic bias voltage-Vth; and a photodiode to convert photons into electron pairs in a depletion layer, causing signal charges to be accumulated when light is incident from outside.Type: GrantFiled: September 21, 2007Date of Patent: August 11, 2009Assignee: Korea Advanced Institute of Science and TechnologyInventors: Kyoung Hoon Yang, Ha Joon Lee
-
Patent number: 7573310Abstract: The present invention relates to a SET/RESET latch circuit a Schmitt trigger circuit, and a MOBILE based D-type flip flop circuit and frequency divider circuit using the SET/RESET latch circuit and Schmitt trigger circuit. The SET/RESET latch circuit is configured with CML-type transistors and negative differential resistance diodes. The SET/RESET latch circuit can be applied to very high speed digital circuits.Type: GrantFiled: May 5, 2006Date of Patent: August 11, 2009Assignee: Korea Advanced Institute of Science and TechnologyInventors: Kyoung-Hoon Yang, Tae-Ho Kim, Yongsik Jeong
-
Patent number: 7573343Abstract: The new RTD-HBT differential oscillator circuit topology is proposed. At the nodes of the inductors and varactors in the conventional differential oscillator topology, each the RTD is attached to increase the magnitude of the negative conductance, which results in performance improvement in both the RF output power and phase noise. And, the differential sinusoidal voltage waveform which is essential for the wireless communication system are generated. In addition, the DC power consumption RTD-HBT differential oscillator circuit is similar to the conventional HBT differential oscillator due to the small DC power consumption performance of the RTD.Type: GrantFiled: August 10, 2006Date of Patent: August 11, 2009Assignee: Korea Advanced Institute of Science and TechnologyInventors: Kyoung-Hoon Yang, Sun-Kyu Choi, Yongsik Jeong
-
Publication number: 20090080465Abstract: Disclosed herein is a multiplexer circuit. The multiplexer circuit includes a first differential output unit, a second differential output unit, and a selection unit. The first differential output unit receives NRZ input signals (D1, and D1) and a clock signal (CLK), and generates differential RZ-mode outputs (R1 and R1). The second differential output unit receives NRZ input signals (D2 and D2) and an inverted clock signal ( CLK), and generates differential RZ-mode outputs (R2 and R2). The selection unit receives the RZ-mode output signals (R1, R1, R2, and R2) generated at the first differential output unit and the second differential output unit, and generates NRZ mode outputs in each half cycle of the clock signal (CLK).Type: ApplicationFiled: November 20, 2007Publication date: March 26, 2009Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Kyoung Hoon YANG, Tae Ho KIM
-
Publication number: 20090039236Abstract: Disclosed herein is an active pixel sensor. A first transistor amplifies voltage generated in response to light at an integration node N. A second transistor is a selecting transistor, and performs a function of selecting a specific pixel from a pixel array. A third transistor resets voltage of the integration node N to voltage supplied from VDD during a reset period. A fourth transistor is a photogate, and performs a function of connecting a photogate capacitance to the integration node N, and thus increasing a dynamic range when the voltage of the integration node N is VDD?Vth (photogate: fourth transistor).Type: ApplicationFiled: September 21, 2007Publication date: February 12, 2009Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Kyoung Hoon YANG, Ha Jun LEE
-
Publication number: 20080174343Abstract: A data receiver and a data receiving method in which the data receiver generates two comparison signals based on amplitude modulated differential input signals, amplifies the comparison signals, compares amplified signals, and outputs logic operation results based on the amplitude modulated differential input signals and the comparison signals, thereby detecting data bits. Accordingly, the number of necessary amplifiers and comparators is reduced and a separate reference voltage generator is not needed, so that chip size reduction and low-power operation is accomplished.Type: ApplicationFiled: February 22, 2007Publication date: July 24, 2008Inventors: Young-su Cha, Kyoung-Hoon Yang
-
Patent number: 7403032Abstract: The present invention relates to CML(Current Mode Logic)-type input driving method and tunneling diode logic using MOBILE(Monostable Nistable transition Logic Element) configuration, as kinds of very high-speed digital logic circuits. The objectives of the present invention are to improve the disadvantage of MOBILE circuit configuration that is an existing tunneling diode logic, and at the same time provide new MOBILE based logic functions. Wherein, the difficulty for input voltage adjustment is resolved by replacing the input part with a CML input driving gate, and speed problem due to transistor is resolved. Moreover, a plurality of logic functions such as inverted return-to-zero D flip-flop, non-inverted return-to-zero D flip-flop, return-to-zero OR gate, return-to-zero D flip-flop generating differential output, and optical flip-flop are implemented.Type: GrantFiled: June 15, 2005Date of Patent: July 22, 2008Assignee: Korea Advanced Institute of Scientififc and TechnologyInventors: Kyoung Hoon Yang, Sun Kyu Choi
-
Publication number: 20080042762Abstract: The new RTD-HBT differential oscillator circuit topology is proposed. At the nodes of the inductors and varactors in the conventional differential oscillator topology, each the RTD is attached to increase the magnitude of the negative conductance, which results in performance improvement in both the RF output power and phase noise. And, the differential sinusoidal voltage waveform which is essential for the wireless communication system are generated. In addition, the DC power consumption RTD-HBT differential oscillator circuit is similar to the conventional HBT differential oscillator due to the small DC power consumption performance of the RTD.Type: ApplicationFiled: August 10, 2006Publication date: February 21, 2008Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Kyoung-Hoon YANG, Sun-Kyu CHOL
-
Publication number: 20080029794Abstract: A new photogate pixel structure for high performance CMOS Image Sensors is proposed. A new photogate structure is incorporated into the photodiode active-pixel structure. The proposed pixel structure exhibits the dynamic integration capacitance characteristics, which can be controlled by varying the control-voltage at the photogate node. Since the sensitivity is inversely proportional to the integration capacitance, the dynamic integration capacitance characteristics can provide the new functionality and controllability for high sensitivity and high dynamic range. At a low voltage level of the photogate, the pixel sensitivity of the new photogate pixel structure is maximized due to the minimum value of the integration capacitance. At a high voltage of the photogate, the dynamic range of the new structure can be maximized due to the increased well capacity. In addition, at an optimum bias voltage of the photogate, both the dynamic-range and the sensitivity can be simultaneously improved.Type: ApplicationFiled: August 10, 2006Publication date: February 7, 2008Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Kyoung-Hoon YANG, Sung-Sik LEE
-
Publication number: 20080029795Abstract: A new photogate pixel structure for high performance CMOS Image Sensors is proposed. A new photogate structure is incorporated into the photodiode active-pixel structure. The proposed pixel structure exhibits the dynamic integration capacitance characteristics, which can be controlled by varying the control-voltage at the photogate node. Since the sensitivity is inversely proportional to the integration capacitance, the dynamic integration capacitance characteristics can provide the new functionality and controllability for high sensitivity and high dynamic range. At a low voltage level of the photogate, the pixel sensitivity of the new photogate pixel structure is maximized due to the minimum value of the integration capacitance. At a high voltage of the photogate, the dynamic range of the new structure can be maximized due to the increased well capacity. In addition, at an optimum bias voltage of the photogate, both the dynamic-range and the sensitivity can be simultaneously improved.Type: ApplicationFiled: January 18, 2007Publication date: February 7, 2008Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Kyoung-Hoon Yang, Sung Sik Lee
-
Publication number: 20070252073Abstract: A new photogate pixel structure for high performance CMOS Image Sensors is proposed. A new photogate structure is incorporated into the photodiode active-pixel structure. The proposed pixel structure exhibits the dynamic integration capacitance characteristics, which can be controlled by varying the control-voltage at the photogate node. Since the sensitivity is inversely proportional to the integration capacitance, the dynamic integration capacitance characteristics can provide the new functionality and controllability for high sensitivity and high dynamic range. At a low voltage level of the photogate, the pixel sensitivity of the new photogate pixel structure is maximized due to the minimum value of the integration capacitance. At a high voltage of the photogate, the dynamic range of the new structure can be maximized due to the increased well capacity. In addition, at an optimum bias voltage of the photogate, both the dynamic-range and the sensitivity can be simultaneously improved.Type: ApplicationFiled: January 16, 2007Publication date: November 1, 2007Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Kyoung-Hoon Yang, Sung Lee
-
Publication number: 20070069810Abstract: The present invention relates to SET/RESET latch circuit, Schmitt trigger circuit, and MOBILE based D-type flip flop circuit and frequency divider circuit using the SET/RESET latch circuit and Schmitt trigger circuit. Herein, SET/RESET latch circuit is especially configured with CML-type transistors and negative differential resistance diodes.Type: ApplicationFiled: May 5, 2006Publication date: March 29, 2007Applicant: Korea Advanced Institute of Science and Technology.Inventors: Kyoung-Hoon Yang, Tae-Ho Kim
-
Publication number: 20060132168Abstract: The present invention relates to CML(Current Mode Logic)-type input driving method and tunneling diode logic using MOBILE(Monostable Nistable transition Logic Element) configuration, as kinds of very high-speed digital logic circuits. The objectives of the present invention are to improve the disadvantage of MOBILE circuit configuration that is an existing tunneling diode logic, and at the same time provide new MOBILE based logic functions. Wherein, the difficulty for input voltage adjustment is resolved by replacing the input part with a CML input driving gate, and speed problem due to transistor is resolved. Moreover, a plurality of logic functions such as inverted return-to-zero D flip-flop, non-inverted return-to-zero D flip-flop, return-to-zero OR gate, return-to-zero D flip-flop generating differential output, and optical flip-flop are implemented.Type: ApplicationFiled: June 15, 2005Publication date: June 22, 2006Applicant: Korea Advanced Institute of Science and TechnologyInventors: Kyoung Hoon Yang, Sun Choi