Abstract: A byproducts treating device includes a transfer unit, a cleaning unit, and a controller. The transfer unit forcibly transfers byproducts from a byproduct source. The cleaning unit is combined with the transfer unit and separates the byproducts into at least one of a power or a byproduct gas. The controller is connected to the cleaning unit and selects at least one selection line for discharging byproduct gas. The byproducts flow from the transfer unit to the cleaning unit without flow lines, and the controller selects the at least one selection line based on a flux of the byproduct gas.

Abstract: A byproducts treating device includes a transfer unit, a cleaning unit, and a controller. The transfer unit forcibly transfers byproducts from a byproduct source. The cleaning unit is combined with the transfer unit and separates the byproducts into at least one of a power or a byproduct gas. The controller is connected to the cleaning unit and selects at least one selection line for discharging byproduct gas. The byproducts flow from the transfer unit to the cleaning unit without flow lines, and the controller selects the at least one selection line based on a flux of the byproduct gas.

Abstract: Semiconductor device fabrication equipment performs a PEOX (physical enhanced oxidation) process, and includes a remote plasma generator for cleaning a process chamber of the equipment. After a PEOX process has been preformed, a purging gas is supplied into the process chamber to purge the process chamber, and the remote plasma generator produces plasma using a first cleaning gas. Accordingly, a reactor of the remote plasma generator is cleaned by the first cleaning gas plasma. Subsequently, the purging gas is supplied to purge the process chamber, and the remote plasma generator produces plasma using a second cleaning gas to remove the first cleaning gas plasma from the remote plasma generator and the process chamber. Finally, full flush operations are performed to remove any gases remaining in the process chamber.

Abstract: Semiconductor device fabrication equipment performs a PEOX (physical enhanced oxidation) process, and includes a remote plasma generator for cleaning a process chamber of the equipment. After a PEOX process has been preformed, a purging gas is supplied into the process chamber to purge the process chamber, and the remote plasma generator produces plasma using a first cleaning gas. Accordingly, a reactor of the remote plasma generator is cleaned by the first cleaning gas plasma. Subsequently, the purging gas is supplied to purge the process chamber, and the remote plasma generator produces plasma using a second cleaning gas to remove the first cleaning gas plasma from the remote plasma generator and the process chamber. Finally, full flush operations are performed to remove any gases remaining in the process chamber.

Abstract: In a method of unloading and/or loading a wafer in a semiconductor device manufacturing apparatus, pumping and/or purge operations are performed in a process chamber while the wafer is separated from a susceptor by a desired distance using a plurality of lift pins.

Abstract: A vacuum leakage detecting device includes a process chamber for performing processes, a fluid valve, and a dry pump. The device further includes a helium gas sensor to detect helium gas in order to check vacuum leaks in potential external leak points.

Abstract: A vacuum leakage detecting device includes a process chamber for performing processes, a fluid valve, and a dry pump. The device further includes a helium gas sensor to detect helium gas in order to check vacuum leaks in potential external leak points.

Abstract: A cleaning apparatus of a high-density plasma chemical vapor deposition chamber, and a cleaning method thereof, uniformly and sufficiently supplies a cleaning gas into a chamber to uniformly clean the chamber. The cleaning apparatus includes a chamber, an upper electrode provided in an upper portion of the chamber and applied with radio frequency energy, a lower electrode provided below the upper electrode and applied with radio frequency energy, a chuck provided below the upper electrode and formed thereon with the lower electrode to fix a wafer thereon, and three or more cleaning gas nozzles provided at regular intervals on the sidewall of the chamber around the chuck.