Abstract: In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

Abstract: A method of forming a tunneling insulating layer having a size smaller than the size obtained by the resolution of a photolithography process is provided. The method includes the steps of forming a first insulating layer and a second insulating layer on a substrate, forming a re-flowable material layer pattern to re-flow the re-flowable material layer pattern, removing the second insulating layer and the first insulating layer to expose the substrate, and forming a tunneling insulating layer.

Abstract: Provided are an automatic signal gain control method and apparatus that adaptively controls signal gain according to sync tip depths in a video receiving system. The method includes: detecting a sync signal from a video signal; detecting a blank level and a sync tip level from a sync section of the sync signal; extracting a difference between the blank level and the sync tip level, as a sync tip depth; and controlling the gain of the video signal differently according to a variation of the sync tip depth.

Abstract: A refrigerator includes a main body cabinet having a storage room formed with a front opening, a door which opens and closes the front opening, and a display unit that is mounted on at least one of the main body cabinet and the door. The display unit includes a display displaying an image, a power supply unit selectively supplying power to the display, a temperature detector detecting a temperature of the display, and a controller controlling the power supply unit to interrupt the power supplied to the display when the temperature detected by the temperature detector is higher than a predetermined maximum temperature.

Abstract: In a nonvolatile semiconductor memory device, and a method of fabricating the same, the nonvolatile semiconductor memory device includes a cell doping region and source/drain regions in a semiconductor substrate, the cell doping region being doped as a first conductive type, a channel region disposed between the source/drain regions in the semiconductor substrate, a tunnel doping region of the first conductive type formed in a predetermined region of an upper portion of the cell doping region, the tunnel doping region being doped in a higher concentration than that of the cell doping region, a tunnel insulating layer formed on a surface of the semiconductor substrate on the tunnel doping region, a gate insulating layer surrounding the tunnel insulating layer and covering the channel region and the cell doping region exposed beyond the tunnel doping region, and a gate electrode covering the tunnel insulating layer and on the gate insulating layer.

Abstract: In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

Abstract: An electrically erasable and programmable read only memory (EEPROM) is fabricated by forming isolation patterns defining active regions in predetermined regions of a semiconductor substrate including a memory transistor region and a selection transistor region. A gate insulating layer having tunnel regions is formed on the active regions. A first conductive layer is formed on the resultant structure having the gate insulating layer. The first conductive layer is patterned to form openings exposing top surfaces of the isolation patterns. The patterning takes place such that a distance between a selected opening and the active region adjacent the opening varies depending on the width of the isolation pattern disposed under the opening. Related EEPROM devices are also disclosed.

Abstract: In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showerhead includes a first space having walls and configured to receive the water vapor, and a second space connected to the first space so that the water vapor is supplied to and partially condensed into liquid water on one or more walls of the first space. Ozone gas and water vapor without liquid water may be supplied to the second space to form the mixture therein. The showerhead may be heated to vaporize the liquid water on a given surface of the first space.

Abstract: In a nonvolatile semiconductor memory device, and a method of fabricating the same, the nonvolatile semiconductor memory device includes a cell doping region and source/drain regions in a semiconductor substrate, the cell doping region being doped as a first conductive type, a channel region disposed between the source/drain regions in the semiconductor substrate, a tunnel doping region of the first conductive type formed in a predetermined region of an upper portion of the cell doping region, the tunnel doping region being doped in a higher concentration than that of the cell doping region, a tunnel insulating layer formed on a surface of the semiconductor substrate on the tunnel doping region, a gate insulating layer surrounding the tunnel insulating layer and covering the channel region and the cell doping region exposed beyond the tunnel doping region, and a gate electrode covering the tunnel insulating layer and on the gate insulating layer.

Abstract: A method of forming a tunneling insulating layer having a size smaller than the size obtained by the resolution of a photolithography process is provided. The method includes the steps of forming a first insulating layer and a second insulating layer on a substrate, forming a re-flowable material layer pattern to re-flow the re-flowable material layer pattern, removing the second insulating layer and the first insulating layer to expose the substrate, and forming a tunneling insulating layer.

Abstract: Disclosed are a mask ROM device and a method of forming the same. This device includes a plurality of cells. At least one among the plurality of cells is programmed. The programmed cell includes a cell gate pattern, cell source/drain regions, a cell insulating spacer, a cell metal silicide, and a cell metal pattern. The cell metal pattern is extended along a surface of a cell capping pattern being the uppermost layer of the cell insulating spacer and the cell gate pattern to be electrically connected to cell metal silicide at opposing sides of the cell gate pattern.

Abstract: An apparatus and method for removing horizontal moire of a cathode-ray tube (CRT) monitor system, wherein horizontal moire can be completely removed even when the moire that occurs in an upper portion of the monitor is different from the moire that occurs in a lower portion of the monitor. In one aspect of the invention, a method for removing horizontal moire in a cathode ray tube (CRT) monitor comprises generating moire correction data in synchronization with a vertical synchronous signal, the moire correction data comprising a sawtooth waveform, adjusting one of a direct current (DC) component, an alternating current (AC) component, and both the DC and AC component, of the moire correction data, outputting the adjusted moire correction data for every other horizontal scan line in synchronization with an odd-numbered or an even-numbered horizontal synchronous signal, and delaying a horizontal drive signal in response to the output adjusted moire correction data.

Abstract: An apparatus and method for removing horizontal moire of a cathode-ray tube (CRT) monitor system, wherein horizontal moire can be completely removed even when the moire that occurs in an upper portion of the monitor is different from the moire that occurs in a lower portion of the monitor. In one aspect of the invention, a method for removing horizontal moire in a cathode ray tube (CRT) monitor comprises generating moire correction data in synchronization with a vertical synchronous signal, the moire correction data comprising a sawtooth waveform, adjusting one of a direct current (DC) component, an alternating current (AC) component, and both the DC and AC component, of the moire correction data, outputting the adjusted moire correction data for every other horizontal scan line in synchronization with an odd-numbered or an even-numbered horizontal synchronous signal, and delaying a horizontal drive signal in response to the output adjusted moire correction data.

Abstract: A convergence correction circuit including a coordinate unit which sets a predetermined range with first level values according to a screen length; an interval unit which divides the screen length; an interval decoder which calculates the value of the branch point of each interval determined by the interval unit; an interval gain unit which stores the gain of each interval; a subtracter which subtracts the output of the coordinate unit from the output of the interval decoder; a multiplier which multiplies the output of the subtracter by the output of the interval gain unit; a level shifter which sets an initial and last value of each interval upon horizontal scanning; an adder which adds the output of the multiplier and the output of the level shifter; a digital-analog converter which converts the output of the adder; and a correction coil which corrects the convergence according to the converted output.

Abstract: A digital deflection processing apparatus and method for a cathode ray tube are suitable for digitally and programmably correcting distortion in the cathode ray tube. The apparatus includes a synchronous signal and clock signal generating portion for generating a first composite synchronous signal extracted from a composite video broadcast signal or a third composite synchronous signal selected from not less than one second composite synchronous signals. A synchronous signal phase compensating portion lags or leads the phase of the third composite synchronous signal, and outputs the lagged or led third composite synchronous signal as a deflection composite synchronous signal. A coordinate value generating portion operates predetermined values with a result counted by the deflection composite synchronous signal, and outputs the operation result as X and Y axis coordinate values.

Abstract: A drum servo system controls rotation of a head drum stably, even though a DFG signal has been dropped out. The drum servo system includes a DFG signal dropout detector for detecting the dropout of the DFG signal to generate first and second switching signals according to the detection. A digital-to-analog converter generates a drum motor driving voltage in dependence upon the first switching signal when the DFG signal is in a normal state and upon the second switching signal when the DFG signal is in an abnormal state. When the DFG signal is in the abnormal state, a previous state of the DFG signal is used for generating the drum motor driving voltage so that the head drum may rotate stably regardless of the dropout of the DFG signal.