Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Abstract: Provided is a pressure sensing element including a first electrode, a pressure sensing unit on the first electrode, a second electrode disposed on the pressure sensing unit and having first and second points on a top surface thereof, a first elastic member on the second electrode, and a second elastic member on the first elastic electrode, wherein a thickness of the first elastic member decreases from the first point toward the second point, and a thickness of the second elastic member increases from the second point toward the first point.

Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Abstract: Provided is a pressure sensing element including a first electrode, a pressure sensing unit on the first electrode, a second electrode disposed on the pressure sensing unit and having first and second points on a top surface thereof, a first elastic member on the second electrode, and a second elastic member on the first elastic electrode, wherein a thickness of the first elastic member decreases from the first point toward the second point, and a thickness of the second elastic member increases from the second point toward the first point.

Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Abstract: Provided is a gate driving circuit. The gate driving circuit includes an ith modulation circuit and an ith line selection circuit (where i is a natural number greater than 1). The ith modulation circuit outputs an ith modulation voltage to an ith line selection circuit based on received first to third control signals. The ith line selection circuit includes a memory transistor that is turned on or turned off according to a level of the received ith modulation voltage.

Abstract: Provided is a display device. The display device includes a lower display element where a substrate, a first lower electrode, a liquid crystal part, and a second lower electrode are sequentially stacked, an upper display element stacked vertical to the lower display element, where a first upper electrode, a light emitting part, a second upper electrode, and a protective part are sequentially stacked, and a middle part configured to deliver a driving signal to the lower and upper display elements, between the lower and upper display elements.

Abstract: Provided are a p-type oxide semiconductor, a method of forming the p-type oxide semiconductor, and a transistor with the p-type oxide semiconductor. The p-type oxide semiconductor includes an alkali metal and a tin oxide.

Abstract: A display panel includes pixels connected to each of gate lines and data lines. Each of the pixels includes a first transistor connected between a corresponding data line among the data lines and a first node and configured to deliver a data signal of the corresponding data line to the first node in response to an input signal received through a corresponding gate line among the gate lines, a reflective element circuit connected to the first node, and configured to implement the reflective mode in response to a signal of the first node when a first mode selection signal indicates a reflective mode, an emissive element circuit connected to a second node, and configured to implement the emissive mode in response to the signal of the first node when the mode selection mode indicates an emissive mode.

Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Abstract: Provided is a gate driving circuit. The gate driving circuit includes an ith modulation circuit and an ith line selection circuit (where i is a natural number greater than 1). The ith modulation circuit outputs an ith modulation voltage to an ith line selection circuit based on received first to third control signals. The ith line selection circuit includes a memory transistor that is turned on or turned off according to a level of the received ith modulation voltage.

Abstract: A display panel includes pixels connected to each of gate lines and data lines. Each of the pixels includes a first transistor connected between a corresponding data line among the data lines and a first node and configured to deliver a data signal of the corresponding data line to the first node in response to an input signal received through a corresponding gate line among the gate lines, a reflective element circuit connected to the first node, and configured to implement the reflective mode in response to a signal of the first node when a first mode selection signal indicates a reflective mode, an emissive element circuit connected to a second node, and configured to implement the emissive mode in response to the signal of the first node when the mode selection mode indicates an emissive mode.

Abstract: Provided is a display device. The display device includes a lower display element where a substrate, a first lower electrode, a liquid crystal part, and a second lower electrode are sequentially stacked, an upper display element stacked vertical to the lower display element, where a first upper electrode, a light emitting part, a second upper electrode, and a protective part are sequentially stacked, and a middle part configured to deliver a driving signal to the lower and upper display elements, between the lower and upper display elements.

Abstract: Provided is a method for fabricating a flexible display device. The method includes attaching a shape memory alloy film memorizing a shape thereof as a curved shape at a shape memory temperature or lower to a flexible substrate at a temperature higher than the shape memory temperature, forming a display device on the flexible substrate, and returning the shape memory alloy to the curved shape to remove the shape memory alloy film from the flexible substrate.

Abstract: Provided is a method for fabricating an electronic device, the method including: preparing a carrier substrate including an element region and a wiring region; forming a sacrificial layer on the carrier substrate; forming an electronic element on the sacrificial layer of the element region; forming a first elastic layer having a corrugated surface on the first elastic layer of the wiring region; forming a metal wirings electrically connecting the electronic element thereto, on the first elastic layer of the wiring region; forming a second elastic layer covering the metal wirings, on the first elastic layer; forming a high rigidity pattern filling in a recess of the second elastic layer above the electronic element so as to overlap the electronic element, and having a corrugated surface; forming a third elastic layer on the second elastic layer and the high rigidity pattern; and separating the carrier substrate.

Abstract: Methods for manufacturing semiconductor devices according to embodiments of the present invention may include providing a sacrificial substrate including a wiring region and a device region, sequentially forming a sacrificial layer and a buffer layer on the sacrificial substrate, forming a thin-film transistor on the buffer layer of the device region, forming a device protection element surrounding the thin-film transistor within the device region, forming a flexible substrate on the buffer layer, and exposing a surface of the buffer layer by separating the sacrificial substrate by removing the sacrificial layer. Since typical semiconductor process technologies may be directly used, the process compatibility may be improved, and semiconductor devices having high resolution and high performance may be manufactured.

Abstract: Provided is a method of fabricating an electronic circuit. The method includes preparing a substrate, forming a polymer film on the substrate, patterning the polymer film to form a polymer pattern, and forming an electronic device on the polymer pattern.

Abstract: Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.

Abstract: Provided is a stretchable devices. The stretchable device includes a first stretchable substrate having a first wavy surface that wrinkles in a first direction; first wiring lines extending along the first wavy surface in the first direction; a second stretchable substrate having a second wavy surface that faces the first wavy surface and wrinkles in a second direction intersecting the first direction, wherein the second stretchable substrate is disposed on the first stretchable substrate; second wiring lines extending along the second wavy surface in the second direction; and interlayer insulating layers disposed on the intersections of the first wiring lines and the second wiring lines and disposed between the first wiring lines and the second wiring lines.