Abstract: An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

Abstract: Provided are printing apparatus, method of fabricating cover glass, and display device including cover glass. A printing apparatus includes a jig including a base including a groove, and a protrusion disposed on a surface of the base, and a pad disposed on the jig. The protrusion surrounds the groove.

Abstract: An image sensor includes a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region, wherein the first isolation structure comprises a first P-type doped region disposed on one corner of the first active region and a second P-type doped region disposed in a center of the first active region, the first P-typed doped region and the second P-type doped region being electrically coupled to each other.

Abstract: An image sensing device is provided to include: a substrate including a photoelectric conversion layer configured to generate photocharges corresponding to the intensity of incident light; a plurality of doping regions disposed along a migration path of the photocharges and doped with dopants in different doping concentrations; and a gate dielectric layer disposed over the substrate and having a gate dielectric layer portion overlapping the plurality of doping regions, the gate dielectric layer portion having a varying thickness that increases along the migration path of the photocharges.

Abstract: An image sensor image sensor may include: a substrate; photo-sensing elements formed in the substrate, each photo-sensing element responsive to light to produce a photo-sensing electrical signal; an antireflection layer formed over of the photo-sensing elements and structured to reduce optical reflection to facilitate optical transmission of incident light to the photo-sensing elements through the antireflection layer; color filters formed over the antireflection layer and arranged to spatially correspond to the photo-sensing elements, respectively, each color filter structured to select a designated color in the incident light to transmit through to a corresponding photo-sensing element; and partition patterns formed over the antireflection layer and arranged to spatially correspond to the photo-sensing elements, respectively, to partition light receiving area above the photo-sensing elements into separate light receiving areas, each partition pattern surrounding a corresponding color filter to be separate f

Abstract: An image sensing device includes a pixel array including a plurality of pixels, each of pixels configured to generate a pixel signal corresponding to intensity of incident light, and a plurality of grid structures, each grid structure disposed to overlap with a boundary between adjacent pixels among the plurality of pixels and configured to include an air layer so as to optically isolate the adjacent pixels. Each of the grid structures includes regions that form a cross shape.

Abstract: An image sensing device includes a pixel array including a (2×2) array that includes two first pixels, a second pixel, and a third pixel, wherein the first to third pixels have a pixel area and include first to third optical filters that are configured to transmit light of different colors, respectively, and wherein the second pixel or the third pixel includes a grid structure located along a boundary of the second pixel or the third pixel, and wherein the first pixel includes a red optical filter and has a first light reception area that is greater than a second light reception area of the second pixel or a third light reception area of the third pixel.

Abstract: An image sensor is provided to include an active region which comprises: a floating diffusion region; a transfer transistor gate region; transistor active regions; and a well-tap region. The transfer transistor gate region may have a diagonal bar shape to isolate the floating diffusion region in a first corner of the active region. The well-tap region may be positioned between the transfer transistor gate region and the transistor active regions, and isolate the transfer transistor gate region from the transistor active regions.

Abstract: An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

Abstract: Disclosed is an image sensor having a plurality of groups of pixels, each group of pixels including: first to third image detection color filter sets and a phase difference detection color filter set, which are arranged in a matrix with rows and columns. The phase difference detection color filter set comprises first to fourth phase difference detection color filter pairs arranged in a matrix with rows and columns. The first to fourth phase difference detection color filter pairs comprise first to fourth left phase difference detection color filters positioned on the left of each of the first to fourth phase difference detection color filter pairs and first to fourth right phase difference detection color filters positioned on the right of each of the first to fourth phase difference detection color filter pairs, respectively.

Abstract: An image sensing device includes a pixel array including a plurality of unit pixels consecutively arranged and structured to generate an electrical signal in response to incident light by performing photoelectric conversion of the incident light. The unit pixels are isolated from each other by first device isolation structures. Each of the unit pixels includes a photoelectric conversion element structured to generate photocharges by performing photoelectric conversion of the incident light, a floating diffusion region structured to receive the photocharges, a transfer transistor structured to transfer the photocharges generated by the photoelectric conversion element to the floating diffusion region, and a well tap region structured to apply a bias voltage to a well region. The well tap region is disposed at a center portion of a corresponding unit pixel.

Abstract: This patent document discloses embodiments of image sensing devices including, an image sensing device which includes a substrate including a substrate surface and a trench extending from the substrate surface, a plurality of photoelectric conversion elements formed in the substrate and operable to convert incident light into photocharge, an electrode formed in the trench and configured to receive a bias voltage for suppressing a dark current, and a light blocking layer formed over the substrate surface of the substrate to block light from transmitting therethrough, and configured to be electrically conductive to receive the bias voltage and transmit the received bias voltage to the electrode.

Abstract: An image sensing device includes a first impurity region, a second impurity region, a floating diffusion region, and a transfer gate. The first impurity region is disposed in a semiconductor substrate and includes impurities with a first doping polarity, and the first impurity region generates photocharges by performing photoelectric conversion in response to incident light. The second impurity region is disposed over the first impurity region and has impurities with a second doping polarity different from the first doping polarity, and the second impurity region contacts with on some portions of the first impurity region. The floating diffusion region disposed over the second impurity region. The transfer gate couples to the floating diffusion region and transmits photocharges generated by the first impurity region to the floating diffusion region. The first impurity region is arranged not in contact with the transfer gate.

Abstract: An image sensing device includes a pixel array including a plurality of pixels, each of pixels configured to generate a pixel signal corresponding to intensity of incident light, and a plurality of grid structures, each grid structure disposed to overlap with a boundary between adjacent pixels among the plurality of pixels and configured to include an air layer so as to optically isolate the adjacent pixels. Each of the grid structures includes regions that form a cross shape.

Abstract: An image sensing device is provided to include: a substrate including a photoelectric conversion layer configured to generate photocharges corresponding to the intensity of incident light; a plurality of doping regions disposed along a migration path of the photocharges and doped with dopants in different doping concentrations; and a gate dielectric layer disposed over the substrate and having a gate dielectric layer portion overlapping the plurality of doping regions, the gate dielectric layer portion having a varying thickness that increases along the migration path of the photocharges.

Abstract: An image sensing device includes a first sub-pixel array including a plurality of unit pixels having a first color arranged adjacent to each other, a second sub-pixel array including a plurality of unit pixels having a second color arranged adjacent to the first sub-pixel array in a first direction, a third sub-pixel array including a plurality of unit pixels having a third color arranged adjacent to the second sub-pixel array in a second direction perpendicular to the first direction, and a fourth sub-pixel array including a plurality of unit pixels having the second color arranged adjacent to the first sub-pixel array and the second sub-pixel array in the second direction. The fourth sub-pixel array includes a plurality of phase detection pixels for detecting a phase difference in at least the first direction.

Abstract: An image sensing device includes a plurality of pixel groups, each pixel group including first to fourth unit pixels that are configured to respond to incident light and generate electrical signals, and wherein each of the first to fourth unit pixels of a pixel group includes optical filters operable to transmit incident light corresponding to a same color, wherein the first unit pixel and the second unit pixel that are included in the pixel group are located adjacent to each other and include portions of a first microlens, and wherein a light reception area of the third unit pixel of the pixel group has a size smaller than a size of a light reception area of the fourth unit pixel of the pixel group.

Abstract: An image sensing device is provided to include organic and inorganic photosensing regions. The organic photosensing region includes an organic material and provides a first image signal generated in response to light incident on the organic photosensing region. The inorganic photosensing region includes an inorganic material and provides a second image signal generated in response to light incident on the inorganic photosensing region. The image sensing device further includes: top and bottom electrodes formed on opposite sides of the organic photosensing region, a first storage region disposed relative to the organic photosensing region and storing the first image signal, a second storage region disposed relative to the inorganic photosensing region and storing the second image signal, and a logic circuit disposed to receive the first image signal and the second image signal and processing at least one of the first image signal or the second image signal.

Abstract: Disclosed is an image sensor having a plurality of groups of pixels, each group of pixels including: first to third image detection color filter sets and a phase difference detection color filter set, which are arranged in a matrix with rows and columns. The phase difference detection color filter set comprises first to fourth phase difference detection color filter pairs arranged in a matrix with rows and columns. The first to fourth phase difference detection color filter pairs comprise first to fourth left phase difference detection color filters positioned on the left of each of the first to fourth phase difference detection color filter pairs and first to fourth right phase difference detection color filters positioned on the right of each of the first to fourth phase difference detection color filter pairs, respectively.

Abstract: An image sensing device includes a pixel array including a (2x2) array that includes two first pixels, a second pixel, and a third pixel, wherein the first to third pixels have a pixel area and include first to third optical filters that are configured to transmit light of different colors, respectively, and wherein the second pixel or the third pixel includes a grid structure located along a boundary of the second pixel or the third pixel, and wherein the first pixel includes a red optical filter and has a first light reception area that is greater than a second light reception area of the second pixel or a third light reception area of the third pixel.