Patents by Inventor Kyoung-Mi Kim

Kyoung-Mi Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250130914
    Abstract: A heterogeneous big data-compatible gateway and artificial intelligence (AI) deep learning-based risk detection system includes a heterogeneous big data-compatible gateway configured to collect data from one or more data sources, manage the collected data, and support data-based decision making, and a risk detection system configured to detect risk information. The heterogeneous big data-compatible gateway includes a requirements definition unit configured to define requirements for data; a source connection unit configured to connect to each data source; an authentication unit configured to authenticate the connected data source; a data extraction unit configured to extract data; a data filtering unit configured to remove duplicate data from a plurality of pieces of data and filter out usable data; a data conversion unit configured to convert the data; a data classification unit configured to classify the converted data; and a storage unit configured to store the classified data.
    Type: Application
    Filed: December 12, 2023
    Publication date: April 24, 2025
    Inventors: Dong Cheol SEOL, Woo Gun JEONG, Kyoung Mi KIM, Gwang Soo LEE
  • Publication number: 20200385753
    Abstract: Provided are a base editing composition comprising deaminase and target-specific nuclease, a base editing method using the base editing composition, and a method for producing a genetically modified animal. The base editing composition has a base editing activity in mammalian embryos.
    Type: Application
    Filed: December 22, 2017
    Publication date: December 10, 2020
    Inventors: Jin-Soo KIM, Kyoung Mi KIM, Seuk Min RYU
  • Patent number: 10437145
    Abstract: A pellicle includes a pellicle frame, a pellicle membrane, and an attaching element, a first surface of the attaching element having exposed pores.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: October 8, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-hyuck Choi, Jin-su Kim, Kyoung-mi Kim, Byung-gook Kim
  • Publication number: 20180136555
    Abstract: A pellicle includes a pellicle frame, a pellicle membrane, and an attaching element, a first surface of the attaching element having exposed pores.
    Type: Application
    Filed: January 9, 2018
    Publication date: May 17, 2018
    Inventors: Jae-hyuck CHOI, Jin-su KIM, Kyoung-mi KIM, Byung-gook KIM
  • Patent number: 9962331
    Abstract: The present invention relates to a composition containing Horse chestnut extract that inhibits angiogenesis and matrix metalloproteinase activity. The Horse chestnut extract of the present invention inhibits angiogenesis and activity of matrix metalloproteinase, so that it can be applied to treat and prevent disease related to angiogenesis and/or matrix metalloproteinase.
    Type: Grant
    Filed: April 26, 2004
    Date of Patent: May 8, 2018
    Assignee: Angiolab, Inc.
    Inventors: Min-Young Kim, Byung-Young Park, Chang-Hee Moon, Eun-Kyu Park, Kyoung-Mi Kim
  • Patent number: 9880462
    Abstract: A pellicle includes a pellicle frame, a pellicle membrane, and an attaching element, a first surface of the attaching element having exposed pores.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: January 30, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-hyuck Choi, Jin-su Kim, Kyoung-mi Kim, Byung-gook Kim
  • Patent number: 9437452
    Abstract: A method of forming a fine pattern includes forming a phase separation guide layer on a substrate, forming a neutral layer on the phase separation guide layer, forming a first pattern including first openings on the neutral layer, forming a second pattern including second openings each having a smaller width than each of the first openings, forming a neutral pattern including guide patterns exposing a portion of the phase separation guide layer by etching an exposed portion of the neutral layer by using the second pattern as an etch mask, removing the second pattern to expose a top surface of the neutral pattern, forming a material layer including a block copolymer on the neutral pattern and the phase separation guide layer exposed through the guide patterns, and forming a fine pattern layer including a first block and a second block on the neutral pattern and the phase separation guide layer.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: September 6, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-ju Park, Hyoung-hee Kim, Kyoung-mi Kim, Se-kyung Baek, Soo-jin Lee, Jae-ho Kim, Jung-sik Choi
  • Publication number: 20160154299
    Abstract: A pellicle includes a pellicle frame, a pellicle membrane, and an attaching element, a first surface of the attaching element having exposed pores.
    Type: Application
    Filed: September 9, 2015
    Publication date: June 2, 2016
    Inventors: Jae-hyuck CHOI, Jin-su KIM, Kyoung-mi KIM, Byung-gook KIM
  • Patent number: 9218969
    Abstract: An example embodiment relates to a patterning process including forming a photoresist pattern on a structure. The photoresist pattern includes a cross-linked surface that is insoluble in an organic solvent. The process also includes spin-on coating a dielectric layer on the photoresist pattern, partially removing the dielectric layer to form a plurality of dielectric spacers surrounding the photoresist pattern, and removing the photoresist pattern.
    Type: Grant
    Filed: September 27, 2011
    Date of Patent: December 22, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung Mi Kim, Jin Ha Jeong
  • Publication number: 20150243525
    Abstract: A method of forming a fine pattern includes forming a phase separation guide layer on a substrate, forming a neutral layer on the phase separation guide layer, forming a first pattern including first openings on the neutral layer, forming a second pattern including second openings each having a smaller width than each of the first openings, forming a neutral pattern including guide patterns exposing a portion of the phase separation guide layer by etching an exposed portion of the neutral layer by using the second pattern as an etch mask, removing the second pattern to expose a top surface of the neutral pattern, forming a material layer including a block copolymer on the neutral pattern and the phase separation guide layer exposed through the guide patterns, and forming a fine pattern layer including a first block and a second block on the neutral pattern and the phase separation guide layer.
    Type: Application
    Filed: January 23, 2015
    Publication date: August 27, 2015
    Inventors: Jeong-ju PARK, Hyoung-hee KIM, Kyoung-mi KIM, Se-kyung BAEK, Soo-jin LEE, Jae-ho KIM, Jung-sik CHOI
  • Patent number: 8685865
    Abstract: A method of forming patterns of a semiconductor device may include forming a photoresist layer that includes a photo acid generator (PAG) and a photo base generator (PBG), generating an acid from the PAG in a first exposed portion of the photoresist layer by first-exposing the photoresist layer, and generating a base from the PBG in a second exposed portion of the photoresist layer by second-exposing a part of the first exposed portion and neutralizing the acid. The method may also include baking the photoresist layer after the first and second-exposing and deblocking the photoresist layer of the first exposed portion in which the acid is generated to form a deblocked photoresist layer, and forming a photoresist pattern by removing the deblocked photoresist layer by using a developer.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: April 1, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-ju Park, Kyoung-mi Kim, Min-jung Kim, Dong-jun Lee, Boo-deuk Kim
  • Patent number: 8551689
    Abstract: A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.
    Type: Grant
    Filed: May 27, 2011
    Date of Patent: October 8, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Mi-Ra Park, Kyoung-Mi Kim, Jeong-Ju Park, Bo-Hee Lee, Jae-Ho Kim, Young-Ho Kim
  • Patent number: 8450444
    Abstract: A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R? represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.
    Type: Grant
    Filed: August 13, 2010
    Date of Patent: May 28, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-Mi Kim, Young-Ho Kim, Youn-Kyung Wang, Mi-Ra Park
  • Publication number: 20130089986
    Abstract: A method of forming patterns of a semiconductor device may include forming a photoresist layer that includes a photo acid generator (PAG) and a photo base generator (PBG), generating an acid from the PAG in a first exposed portion of the photoresist layer by first-exposing the photoresist layer, and generating a base from the PBG in a second exposed portion of the photoresist layer by second-exposing a part of the first exposed portion and neutralizing the acid. The method may also include baking the photoresist layer after the first and second-exposing and deblocking the photoresist layer of the first exposed portion in which the acid is generated to form a deblocked photoresist layer, and forming a photoresist pattern by removing the deblocked photoresist layer by using a developer.
    Type: Application
    Filed: September 10, 2012
    Publication date: April 11, 2013
    Inventors: Jeong-ju PARK, Kyoung-mi KIM, Min-jung KIM, Dong-jun LEE, Boo-deuk KIM
  • Patent number: 8377626
    Abstract: A method of forming a pattern and a negative-type photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymer, a photoacid generator, and a solvent, wherein the polymer includes an alkoxysilyl group as a side chain and is cross-linkable by an acid to be insoluble in a developer; curing a first portion of the photoresist film by exposing the first portion to light, the exposed first portion being cured by a cross-linking reaction of the alkoxysilyl groups therein; and providing a developer to the photoresist film to remove a second portion of the photoresist film that is not exposed to light, thereby forming a photoresist pattern on the substrate.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: February 19, 2013
    Assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
    Inventors: Kyoung-Mi Kim, Jin-Baek Kim, Ji-Young Park, Young-Ho Kim
  • Publication number: 20120139086
    Abstract: An example embodiment relates to a patterning process including forming a photoresist pattern on a structure. The photoresist pattern includes a cross-linked surface that is insoluble in an organic solvent. The process also includes spin-on coating a dielectric layer on the photoresist pattern, partially removing the dielectric layer to form a plurality of dielectric spacers surrounding the photoresist pattern, and removing the photoresist pattern.
    Type: Application
    Filed: September 27, 2011
    Publication date: June 7, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyoung Mi Kim, Jin Ha Jeong
  • Publication number: 20120064724
    Abstract: Methods of forming a pattern of a semiconductor device including performing a double patterning process without using an atomic layer deposition (ALD) oxide film are provided. The methods may include forming a mask pattern on a substrate; forming a chemical attach process (CAP) material layer covering at least a portion of the mask pattern; forming a CAP adhesive layer by adhering at least a portion of the CAP material layer to the mask pattern by using a first baking process and a first development process; forming an interlayer covering at least a portion of the mask pattern and the CAP adhesive layer; and removing the mask pattern and the interlayer while allowing the CAP adhesive layer to remain by using a second baking process and a second development process.
    Type: Application
    Filed: August 31, 2011
    Publication date: March 15, 2012
    Inventors: Bo-hee Lee, Kyoung-mi Kim, Jeong-ju Park, Mi-ra Park, Jae-ho Kim, Young-ho Kim
  • Publication number: 20120064463
    Abstract: Provided is a method of forming micropatterns, in which a line-and-space pattern is formed using a positive photoresist, and a spin-on-oxide (SOX) spacer is formed on two sidewalls of the line-and-space pattern and used in etching a lower layer, thereby doubling a pattern density. Accordingly, all operations may be performed in single equipment (lithography equipment) without taking a substrate out, and thus a high throughput is obtained, and concerns about pollution are very low. Moreover, as the line-and-space pattern is formed using a wet method by using a negative tone developer, line-width roughness (LWR) of the micropatterns may be improved compared to when a dry etching method is used.
    Type: Application
    Filed: September 1, 2011
    Publication date: March 15, 2012
    Inventors: Jeong-ju Park, Kyoung-mi Kim, Joo-hyung Yang, Bo-hee Lee, Min-jung Kim, Jae-ho Kim, Young-ho Kim
  • Publication number: 20110300712
    Abstract: Methods of forming a photoresist pattern include forming a first photoresist pattern on a substrate and treating the first photoresist pattern with plasma that modifies etching characteristics of the first photoresist pattern. This modification may include making the first photoresist pattern more susceptible to removal during subsequent processing. The plasma-treated first photoresist pattern is covered with a second photoresist layer, which is patterned into a second photoresist pattern that contacts sidewalls of the plasma-treated first photoresist pattern. The plasma-treated first photoresist pattern is selectively removed from the substrate to reveal the remaining second photoresist pattern. The second photoresist pattern is used as an etching mask during the selective etching of a portion of the substrate (e.g., target layer).
    Type: Application
    Filed: May 9, 2011
    Publication date: December 8, 2011
    Inventors: Kyoung-Mi Kim, Jeong-Ju Park, Mi-Ra Park, Bo-Hee Lee, Jae-Ho Kim, Young-Ho Kim
  • Patent number: 8071484
    Abstract: There are provided a method of forming a fine pattern employing self-aligned double patterning. The method includes providing a substrate. First mask patterns are formed on the substrate. A reactive layer is formed on the substrate having the first mask patterns. The reactive layer adjacent to the first mask patterns is reacted using a chemical attachment process, thereby forming sacrificial layers along outer walls of the first mask patterns. The reactive layer that is not reacted is removed to expose the sacrificial layers. Second mask patterns are formed between the sacrificial layers adjacent to sidewalls of the first mask patterns facing each other. The sacrificial layers are removed to expose the first and second mask patterns and the substrate exposed between the first and second mask patterns. The substrate is etched using the first and second mask patterns as an etching mask.
    Type: Grant
    Filed: June 3, 2008
    Date of Patent: December 6, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung-Mi Kim, Jae-Ho Kim, Young-Ho Kim, Myung-Sun Kim, Youn-Kyung Wang, Mi-Ra Park