Abstract: A semiconductor device is provided. The semiconductor device includes a substrate containing deuterium at a first concentration, an active pattern disposed on the substrate and extending in a first horizontal direction, a gate electrode disposed on the active pattern and extending in a second horizontal direction different from the first horizontal direction, a gate insulating layer disposed between the active pattern and the gate electrode, the gate insulating layer containing deuterium at a second concentration, a first interlayer insulating layer disposed on the gate electrode, a second interlayer insulating layer disposed on the first interlayer insulating layer, and a wiring pattern disposed inside the second interlayer insulating layer, the wiring pattern containing deuterium at a third concentration lower than the first concentration, wherein each of the first to third concentrations is a concentration of deuterium atoms contained in the same unit volume.

Abstract: A semiconductor device includes a substrate having a cell region and a peripheral region surrounding the cell region, a lower electrode extending in a vertical direction on the cell region of the substrate, an upper electrode surrounding a sidewall and a top surface of the lower electrode, a capacitor dielectric layer disposed between the lower electrode and the upper electrode, a first barrier layer disposed on the upper electrode, the first barrier layer in contact with each of a sidewall and a top surface of the upper electrode, a first interlayer insulating layer covering the first barrier layer, the first interlayer insulating layer including a material different from the first barrier layer, and a first contact penetrating through the first barrier layer and the first interlayer insulating layer in the vertical direction, the first contact connected to the upper electrode.