Patents by Inventor Kyoung-Mun Kim

Kyoung-Mun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12255075
    Abstract: An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.
    Type: Grant
    Filed: January 17, 2023
    Date of Patent: March 18, 2025
    Assignees: SK hynix Inc., Merck Patent GmbH
    Inventors: Jae Chul Lee, Hyun Sik Noh, Dong Kyun Lee, Eun Ae Jung, Kyoung-Mun Kim, Jooyong Kim, Younghun Byun, Byeong Il Yang, Changhyun Jin
  • Publication number: 20240079249
    Abstract: An atomic layer etching method using a ligand exchange reaction may include a substrate providing step of putting a substrate with a thin film formed thereon into a reaction chamber, a halogenated thin film forming step of forming a halogenated thin film on a surface of the thin film by infusing a halogenated gas into the reaction chamber, and an etching step of etching the halogenated thin film by infusing a ligand without a metal or metal precursor into the reaction chamber with the substrate with the halogenated thin film.
    Type: Application
    Filed: January 17, 2023
    Publication date: March 7, 2024
    Inventors: Jae Chul LEE, Hyun Sik NOH, Dong Kyun LEE, Eun Ae JUNG, Kyoung-Mun KIM, Jooyong KIM, Younghun BYUN, Byeong Il YANG, Changhyun JIN
  • Patent number: 7326520
    Abstract: The present invention provides a polymer represented by the following formula 1 and a chemically amplified resist composition including the polymer, which resist composition is excellent in adhesion, storage stability and dry etch resistance, with good resolution in both C/H and L/S patterns, and provides a good pattern profile irrespective of the type of the substrate due to its good process window:
    Type: Grant
    Filed: April 18, 2005
    Date of Patent: February 5, 2008
    Assignee: Korea Kumho Petrochemical Co., Ltd.
    Inventors: Hyun-Sang Joo, Joo-Hyeon Park, Dong-Chul Seo, Young-Taek Lim, Seong-Duk Cho, Ji-Young Song, Kyoung-Mun Kim
  • Publication number: 20060057490
    Abstract: The present invention provides a polymer represented by the following formula 1 and a chemically amplified resist composition including the polymer, which resist composition is excellent in adhesion, storage stability and dry etch resistance, with good resolution in both C/H and L/S patterns, and provides a good pattern profile irrespective of the type of the substrate due to its good process window:
    Type: Application
    Filed: April 18, 2005
    Publication date: March 16, 2006
    Applicant: Korea Kumbo Petrochemical Co., Ltd.
    Inventors: Hyun-Sang Joo, Joo-Hyeon Park, Dong-Chul Seo, Young-Taek Lim, Seong-Duk Cho, Ji-Young Song, Kyoung-Mun Kim