Abstract: A semiconductor memory device includes a pipe latch unit having a plurality of pipe latches for latching data. An input controller controls input timing of data transmitted from data line to the pipe latch unit. An output controller controls output timing of data latched in the pipe latch unit. An initialization controller controls the input controller and the output controller to thereby initialize the pipe latch unit in response to a read/write flag signal which is activated during a write operation.

Abstract: A semiconductor integrated circuit includes a DLL controlling block configured to enable or disable an update enable signal by detecting a change in a voltage level of a phase detecting signal during a predetermined time when an operation enable signal and a threshold phase difference detecting signal are enabled, and a delay locked loop (DLL) circuit configured to generate an output clock signal by delaying and driving the reference clock signal and to control a frequency of a change in the delay amount of the reference clock signal in response to the update enable signal.

Abstract: An address receiving circuit for a semiconductor apparatus includes a controller that, in response to a semiconductor apparatus initialization-related command, generates a control signal having an activation cycle corresponding to the standard of cycle time of the semiconductor apparatus initialization-related command, and an address buffer that receives an address according to the control signal.

Abstract: A semiconductor integrated circuit includes a delay locked loop (DLL) control block configured to generate a buffer enable signal, the buffer enable signal being a pulse signal that is periodically enabled when a smart power down signal is enabled, and a DLL circuit configured to control a phase of an external clock signal in response to the buffer enable signal to generate an output clock signal.

Abstract: An address receiving circuit for a semiconductor apparatus includes a controller that, in response to a semiconductor apparatus initialization-related command, generates a control signal having an activation cycle corresponding to the standard of cycle time of the semiconductor apparatus initialization-related command, and an address buffer that receives an address according to the control signal.

Abstract: A semiconductor memory device includes: a modulation controller for generating a modulation control signal for controlling a frequency modulation operation; a delay locked loop (DLL) circuit for performing a delay locking operation to generate first and second DLL clocks and outputting a frequency-modulated DLL clock in response to the modulation control signal; and a data strobe signal generator for outputting the frequency-modulated DLL clock as a data strobe signal.

Abstract: A semiconductor memory device includes: a modulation controller for generating a modulation control signal for controlling a frequency modulation operation; a delay locked loop (DLL) circuit for performing a delay locking operation to generate first and second DLL clocks and outputting a frequency-modulated DLL clock in response to the modulation control signal; and a data strobe signal generator for outputting the frequency-modulated DLL clock as a data strobe signal.

Abstract: A magnetic resonance imaging system is provided, which can provide the homogeneous magnetic field to obtain a head anatomic image with a high resolution and high SNR by coaxially disposing a receive-only phased array antenna inside a transmit-only antenna with a predetermined gap, and thereby a detailed and accurate image of a man's head can be obtained.

Abstract: A refresh circuit of a semiconductor memory apparatus includes a bank active signal generator configured to selectively enable a plurality of bank active signals in response to a piled signal and disable the plurality of bank active signals in response to a plurality of precharge pulses when a refresh signal is enabled; a precharge pulse generator configured to generate a plurality of preliminary precharge pulses in response to the plurality of bank active signals; a delaying unit configured to generate a plurality of preliminary delay precharge pulses by delaying the plurality of preliminary precharge pulses; and a selecting unit configured to selectively output the plurality of preliminary precharge pulses or the plurality of preliminary delay precharge pulses as the plurality of precharge pulses in response to the piled signal.

Abstract: There is provided an RF (radio frequency) coil assembly of a magnetic resonance imaging (MRI) system, which comprises a birdcage transmit-only coil using inhomogeneous modes. Further, a multi-channel receive-only phased array coil is provided. In one embodiment, the multi-channel receive-only phased array coil may include a plurality of ring-shaped receive-only coils, wherein the receive-only coils are connected to each other in a pseudo-chain-link configuration to form a ring shape. The multi-channel receive-only phased array coil may be located inside said transmit-only coil and spaced a predetermined distance apart therefrom. In accordance with the embodiments, emphasis images of the peripheral part of a human brain with high resolution and high signal to noise ratio may be obtained.

Abstract: A synchronous semiconductor memory device of the present invention includes: an operation controller for outputting a column active sense pulse in response to a column address and a column command signal; a shift register controller, activated in response to the column active sense pulse, for dividing a clock signal by N to thereby output a divided clock signal, N being a positive integer greater than 1; a plurality of shift registers connected in series and synchronized with the divided clock signal, wherein each shift register transmits the column active sense pulse to the next shift register; and a column active control signal generator for logically combining outputs of the shift registers to thereby generate a column active control signal.

Abstract: Semiconductor memory device and method for operating the same comprise an auxiliary driver configured to output an internal strobe signals generated corresponding to a read command as a plurality of auxiliary strobe signal in response to a control signal, wherein the auxiliary driver bypass a first output auxiliary strobe signal, and delay to output the rest of the auxiliary strobe signal among the outputted auxiliary strobe signal and a strobe signal generator for driving the auxiliary strobe signal to output the delayed auxiliary strobe signal as a data strobe signals.

Abstract: A pipe latch device includes an output controller for outputting first and second output control signal groups based on a DLL clock signal and a driving signal; an input controller for generating an input control signal group; and a pipe latch unit for latching data on a data line when a corresponding input control signal is activated, and outputting latched data when a corresponding output control signal is activated, wherein the output controller includes a plurality of shifters, each for delaying an input data signal by half clock and one clock to output a first and second output signals in synchronization with the DLL clock signal and the driving signal; and a plurality of output control signal drivers for outputting the first and second output control signal groups based on the first and second output signals.

Abstract: A semiconductor memory device includes: a modulation controller for generating a modulation control signal for controlling a frequency modulation operation; a delay locked loop (DLL) circuit for performing a delay locking operation to generate first and second DLL clocks and outputting a frequency-modulated DLL clock in response to the modulation control signal; and a data strobe signal generator for outputting the frequency-modulated DLL clock as a data strobe signal.

Abstract: A pulse control device is maintained with a constant pulse width corresponding to a change of process or temperature. The pulse control device comprises a fuse set for selectively outputting a delay increase signal and a delay decrease signal that have a different state based on a cutting or non-cutting state of a fuse on which information on a change of process is programmed, and a pulse generator provided with a plurality of delay cells with predetermined time delay for selectively increasing or decreasing the number of the plurality of delay cells depending on the delay increase signal and the delay decrease signal to generate an internal clock with a pulse width corresponding to the number of the increased or decreased delay cells.

Abstract: A semiconductor integrated circuit includes a delay locked loop (DLL) control block configured to generate a buffer enable signal, the buffer enable signal being a pulse signal that is periodically enabled when a smart power down signal is enabled, and a DLL circuit configured to control a phase of an external clock signal in response to the buffer enable signal to generate an output clock signal.

Abstract: A semiconductor integrated circuit includes a DLL controlling block configured to enable or disable an update enable signal by detecting a change in a voltage level of a phase detecting signal during a predetermined time when an operation enable signal and a threshold phase difference detecting signal are enabled, and a delay locked loop (DLL) circuit configured to generate an output clock signal by delaying and driving the reference clock signal and to control a frequency of a change in the delay amount of the reference clock signal in response to the update enable signal.

Abstract: An RF (radio frequency) coil assembly of a magnetic resonance imaging (MRI) system, which has a spiral-shaped coil and a plurality of sections. In one embodiment, an RF coil of a magnetic resonance imaging (MRI) system has a plurality of ring-shaped end-rings arranged vertically and a plurality of rods. Each of the rods are connected to the plurality of end-rings. Adjacent end-rings of the plurality of end-rings forms respective coil sections and each of the coil sections has switching blocks located between adjacent rods of the plurality of rods. The switching blocks are operable to control the continuity status of the plurality of rods in the respective coil section.

Abstract: A semiconductor memory device includes a pulse signal generator configured to combine a plurality of external command signals to generate a normal register control signal and an extended register control signal in response to a clock signal; a reset signal generator configured to receive operating information of a delay locked loop (DLL) circuit from an outside to generate a reset signal for a reset operation of the DLL circuit in response to the normal register control signal or the extended register control signal; and the DLL circuit configured to perform a reset operation in response to the reset signal.

Abstract: Provided are a delay locked loop (DLL) and a method for generating a divided clock therein. In the DLL, a width of a reference frequency for phase comparison can be changed depending on a magnitude of an operating frequency. In the DLL, a clock buffer receives a clock equal to an external clock and generates an internal clock. An enable clock generator generates a 1-period enable clock or a 2-period enable clock using a command signal generated for performing a predefined operation. The command signal is generated according to an address command signal inputted from an exterior. A clock divider divides the internal clock to generate a divided clock. The divided clock is controlled by the 1-period enable clock or the 2-period enable clock, such that the divided clock is made to be a 1-period based dividing clock or a 2-period based dividing clock.