Abstract: The present disclosure relates to a lithium metal anode electrode that suppresses the growth of lithium dendrites which may deteriorate the electrochemical performance of a battery and cause catastrophic damage to a battery structure, and in particular, a method of manufacturing an anode electrode having a three-dimensional highly porous structure or a metal-or-carbon-based three-dimensional network structure, including irradiation of photoelectromagnetic energy.

Abstract: The present disclosure relates to a method of manufacturing a lithium battery electrode with enhanced electrical and ionic conductivity. The method includes applying photoelectromagnetic energy using IPL, laser, plasma or microwaves, thereby making it possible to apply energy to electrode nanocomposites including active materials, binders and conductive carbon additives.

Abstract: The present disclosure relates to a method for manufacturing an electrode for a lithium secondary battery having encapsulated active material using energy application, and the method helps to minimize the volume change of an electrode or negative side effects, such as high internal stress, a fracture, pulverization, delamination, electronic isolation from a conductive agent, the formation of an unstable solid-electrolyte interphase, and a loss of energy capacity of the batteries.

Abstract: An apparatus may include a first phase control circuit and/or a second phase control circuit. The first phase control circuit may compare the phase of the first clock signal with the phase of the second clock signal, and may control the phase of the first clock signal based on the result of the comparison. The second phase control circuit may control the phase of the second clock signal based on the result of the comparison output from the first phase control circuit. The first phase control circuit may control the phase of the first clock signal and/or the second phase control circuit may control the phase of the second clock signal such that they are synchronized with each other.

Abstract: A memory controller and a semiconductor device comprising the same are provided. The semiconductor device comprises a memory block comprising a plurality of memory banks and a memory controller. The memory controller outputs an auto refresh command and memory bank information indicating a memory bank that is to be auto refreshed in an auto refresh mode. Thus, only the selected memory bank performs an auto refresh operation in the auto refresh mode while reducing current consumption in the semiconductor device.

Abstract: A slave device may be configured to receive at least one bus interface clock and bus interface signals from a bus coupled to the at least one bus interface unit. The slave device may also be configured to operate independently of at least one main function clock.

Abstract: A multiport memory device includes a first dedicated memory region, a second dedicated memory region, and a shared memory region. The first dedicated memory region can be accessed by a first, processor. The second dedicated memory region can be accessed fay a second processor. The shared memory region can be accessed by both the first processor and the second processor. The shared memory region and comprises an SRAM.

Abstract: A delay signal generator circuit is provided. A delay circuit including a plurality of series-connected inverters for sequentially delaying a first clock signal and for generating a plurality of delay signals and a multiplexer for selecting one of the delay signals. A delay control circuit samples the selected delay signal in response to a transition of a second clock signal. The second clock signal has twice the frequency of the first clock signal, and the delay control circuit controls the delay circuit based upon the sampled value(s) so that the selected delay signal output from the delay circuit has a delay time of ¼ clock cycle relative to the first clock signal.

Abstract: An apparatus may include a first phase control circuit and/or a second phase control circuit. The first phase control circuit may compare the phase of the first clock signal with the phase of the second clock signal, and may control the phase of the first clock signal based on the result of the comparison. The second phase control circuit may control the phase of the second clock signal based on the result of the comparison output from the first phase control circuit. The first phase control circuit may control the phase of the first clock signal and/or the second phase control circuit may control the phase of the second clock signal such that they are synchronized with each other.

Abstract: A slave device may be configured to receive at least one bus interface clock and bus interface signals from a bus coupled to the at least one bus interface unit.

Abstract: A delay signal generator circuit is provided. A delay circuit including a plurality of series-connected inverters for sequentially delaying a first clock signal and for generating a plurality of delay signals and a multiplexer for selecting one of the delay signals. A delay control circuit samples the selected delay signal in response to a transition of a second clock signal. The second clock signal has twice the frequency of the first clock signal, and the delay control circuit controls the delay circuit based upon the sampled value(s) so that the selected delay signal output from the delay circuit has a delay time of ¼ clock cycle relative to the first clock signal.

Abstract: A memory controller and a semiconductor device comprising the same are provided. The semiconductor device comprises a memory block comprising a plurality of memory banks and a memory controller. The memory controller outputs an auto refresh command and memory bank information indicating a memory bank that is to be auto refreshed in an auto refresh mode. Thus, only the selected memory bank performs an auto refresh operation in the auto refresh mode while reducing current consumption in the semiconductor device.