Patents by Inventor Kyoung S. Yook

Kyoung S. Yook has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Materials for controlling the epitaxial growth of photoactive layers in photovoltaic devices
    Patent number: 11211559
    Abstract: There is disclosed ultrathin film material templating layers that force the morphology of subsequently grown electrically active thin films have been found to increase the performance of small molecule organic photovoltaic (OPV) cells. There is disclosed electron-transporting material, such as hexaazatriphenylene-hexacarbonitrile (HAT-CN) can be used as a templating material that forces donor materials, such as copper phthalocyanine (CuPc) to assume a vertical-standing morphology when deposited onto its surface on an electrode, such as an indium tin oxide (ITO) electrode. It has been shown that for a device with HAT-CN as the templating buffer layer, the fill factor and short circuit current of CuPc:C60 OPVs were both improved compared with cells lacking the HAT-CN template. This is explained by the reduction of the series resistance due to the improved crystallinity of CuPc grown onto the ITO surface.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: December 28, 2021
    Assignees: The Regents of the University of Michigan, Industry-Academic Cooperation Foundation Dankook University
    Inventors: Stephen R. Forrest, Brian E. Lassiter, Jun Y. Lee, Kyoung S. Yook, Soon O. Jeon, Byung D. Chin
  • MATERIALS FOR CONTROLLING THE EPITAXIAL GROWTH OF PHOTOACTIVE LAYERS IN PHOTOVOLTAIC DEVICES
    Publication number: 20120090685
    Abstract: There is disclosed ultrathin film material templating layers that force the morphology of subsequently grown electrically active thin films have been found to increase the performance of small molecule organic photovoltaic (OPV) cells. There is disclosed electron-transporting material, such as hexaazatriphenylene-hexacarbonitrile (HAT-CN) can be used as a templating material that forces donor materials, such as copper phthalocyanine (CuPc) to assume a vertical-standing morphology when deposited onto its surface on an electrode, such as an indium tin oxide (ITO) electrode. It has been shown that for a device with HAT-CN as the templating buffer layer, the fill factor and short circuit current of CuPc:C60 OPVs were both improved compared with cells lacking the HAT-CN template. This is explained by the reduction of the series resistance due to the improved crystallinity of CuPc grown onto the ITO surface.
    Type: Application
    Filed: October 14, 2011
    Publication date: April 19, 2012
    Inventors: Stephen R. Forrest, Brian E. Lassiter, Jun Y. Lee, Kyoung S. Yook, Soon O. Jeon, Byung D. Chin