Abstract: A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.

Abstract: A method of preparing silicon carbide powder is provided, which includes mixing first silicon carbide powder with a liquid silicon carbide precursor, annealing the mixture at a first temperature and converting the silicon carbide precursor to a ?-phase silicon carbide particulate material, and annealing the material at a second temperature and grain-growing the first silicon carbide powder to second silicon carbide powder using the ?-phase silicon carbide particulate material.

Abstract: A silicon carbide powder includes at least one group selected from a first group comprising an alpha phase silicon carbide pulverulent body of which a granule size (D50) is greater than 0 ?m and less than 45 ?m with impurities less than 10 ppm, a second group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 45 ?m and less than 75 ?m with impurities less than 10 ppm, and a third group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 75 ?m and less than 110 ?m with impurities less than 10 ppm. In addition, a method for preparing a silicon carbide powder includes adding seeds to a beta silicon carbide powder, and forming an alpha silicon carbide powder by heat treating the beta silicon carbide powder.

Abstract: A method for preparing a silicon carbide power includes collecting a mixture powder by mixing a carbon source and a silicon source, synthesizing a first silicon carbide powder by heating the mixture powder, forming an agglomerated powder by agglomerating the first silicon carbide powder, and forming a second silicon carbide powder, which has larger particles than the first silicon carbide powder, by heating the agglomerated powder.

Abstract: A method for preparing a silicon carbide powder includes adding seeds to a beta silicon carbide powder, and forming an alpha silicon carbide powder by heat treating the beta silicon carbide powder.

Abstract: A method of preparing silicon carbide powder is provided, which includes mixing first silicon carbide powder with a liquid silicon carbide precursor, annealing the mixture at a first temperature and converting the silicon carbide precursor to a ?-phase silicon carbide particulate material, and annealing the material at a second temperature and grain-growing the first silicon carbide powder to second silicon carbide powder using the ?-phase silicon carbide particulate material.

Abstract: A raw material for growing an ingot according to the embodiment comprises an agglomerate raw material in which fine particles are agglomerated, wherein the agglomerate raw material has a granular shape. A method for fabricating a raw material for growing an ingot according to the embodiment comprises the steps of: preparing an ultrahigh-purity powder; and granulating the ultrahigh-purity powder. A method for fabricating an ingot according to the embodiment comprises the steps of: preparing a raw material; filling the raw material in a crucible; and growing a single crystal from the raw material, wherein the raw material comprises an agglomerate raw material in which fine particles are agglomerated, and the agglomerate raw material has a granular shape.

Abstract: A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.

Abstract: A method for growing an ingot according to the embodiment includes filling a first powder in a crucible; raising a temperature of the crucible; forming a second powder by grain-growing the first powder; and growing the ingot by sublimating the second powder.

Abstract: An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material, wherein the raw material comprises first powder and second powders having grain sizes different from each other. A method for providing a raw material according to the embodiment comprises preparing a crucible including a central area and an edge area which surrounds the central area; filling a first powder in the central area; and filling a second powder in the edge area, the second powder having a grain size different from a grain size of the first powder.