Abstract: A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, forming a plurality of reference patterns, arranged at a first pitch, on the feature layer, forming an organic liner on a side wall of each of the plurality of reference patterns, forming a plurality of buried patterns on the organic liner, removing the organic liner exposed between the plurality of buried patterns and the plurality of reference patterns, and etching the feature layer by using the plurality of buried patterns and the plurality of reference patterns as etch masks to form a feature pattern. Each of the plurality of buried patterns covers a space between side walls of two adjacent reference patterns among the plurality of reference patterns.

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract: A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, forming a plurality of reference patterns, arranged at a first pitch, on the feature layer, forming an organic liner on a side wall of each of the plurality of reference patterns, forming a plurality of buried patterns on the organic liner, removing the organic liner exposed between the plurality of buried patterns and the plurality of reference patterns, and etching the feature layer by using the plurality of buried patterns and the plurality of reference patterns as etch masks to form a feature pattern. Each of the plurality of buried patterns covers a space between side walls of two adjacent reference patterns among the plurality of reference patterns.

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract: A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.

Abstract: A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.

Abstract: In a method of forming a pattern, a photoresist pattern is formed on a substrate including an etching target layer. A surface treatment is performed on the photoresist pattern to form a guide pattern having a higher heat-resistance than the photoresist pattern. A material layer including a block copolymer including at least two polymer blocks is coated on a portion of the substrate exposed by the guide pattern. A micro-phase separation is performed on the material layer to form a minute pattern layer including different polymer blocks arranged alternately. At least one polymer block is removed from the minute pattern layer to form a minute pattern mask. The etching target layer is etched by using the minute pattern mask to form a pattern. Minute patterns may be formed utilizing a less complex process that those employed during conventional processes of forming a minute pattern.

Abstract: An oligomer probe array having improved reaction yield is provided. The oligomer probe array includes a substrate, an immobilization layer on the substrate, a plurality of nano particles coupled with a surface of the immobilization layer, and a plurality of oligomer probes coupled with surfaces of the nano particles.

Abstract: An oligomer probe array with improved signal-to-noise ratio includes a substrate, a plurality of probe cell active regions formed on or in the substrate, with each of the plurality of probe cell active regions having a substantially planar surface and being coupled with at least one oligomer probe with own sequence, and a probe cell isolation region defining the probe cell active regions and having no functional groups for coupling with the oligomer probes on a surface.

Abstract: A method of forming a fine pattern includes forming an organic guide layer on a substrate, forming a photoresist pattern on the organic guide layer, the photoresist pattern including a plurality of openings exposing portions of the organic guide layer, forming a material layer on the exposed portions of the organic guide layer and on the photoresist pattern, the material layer including block copolymers, and rearranging the material layer through phase separation of the block copolymers into a fine pattern layer, such that the fine pattern layer includes a plurality of first blocks and a plurality of second blocks arranged in an alternating pattern, the plurality of first blocks and the plurality of the second blocks having different repeating units of the block copolymers.

Abstract: An oligomer probe array with improved signal-to-noise ratio and desired detection sensitivity even when a reduced design rule is employed includes a substrate, a plurality of probe cell active regions formed on or in the substrate, each of the plurality of probe cell active regions having a three-dimensional surface and being coupled with at least one oligomer probe with its own sequence, and a probe cell isolation region defining the probe cell active regions and having no functional groups for coupling with the oligomer probes on a surface.

Abstract: A photolabile compound, an oligomer probe array, and a substrate for oligomer probe array comprising the same, and a manufacturing method of the same are disclosed.

Abstract: A microarray, a substrate for a microarray and more productive methods of fabricating the microarray and the substrate are provided. The microarray includes a substrate divided into a first region and a second region; a plurality of linkers represented by formula 1 or 2: wherein X is a site coupled to the substrate, R is a hydroxyl, aldehyde, carboxyl, amino, amide, thiol, halo, epoxy, or sulfonate group, m is an integer in the range of 3 to 16, p is an integer in the range of 1 to 30, and q is an integer in the range of 1 to 15, directly coupled to the substrate in the first region but not coupled to the substrate in the second region; and a plurality of probes coupled to the respective linkers.

Abstract: A DNA chip includes a substrate, at least one first electrode and at least one second electrode on the substrate, the first electrode and the second electrode being opposite to and separated from each other, multiple oligonucleotide probes, one end of the oligonucleotide probes being immobilized on the first electrode, and a charge-carrier transport layer on the second electrode, the charge-carrier layer contacting an other end of the oligonucleotide probes.

Abstract: A method of forming a fine pattern includes forming an organic guide layer on a substrate, forming a photoresist pattern on the organic guide layer, the photoresist pattern including a plurality of openings exposing portions of the organic guide layer, forming a material layer on the exposed portions of the organic guide layer and on the photoresist pattern, the material layer including block copolymers, and rearranging the material layer through phase separation of the block copolymers into a fine pattern layer, such that the fine pattern layer includes a plurality of first blocks and a plurality of second blocks arranged in an alternating pattern, the plurality of first blocks and the plurality of the second blocks having different repeating units of the block copolymers.

Abstract: A non-linear silicon compound is provided. The non-linear silicon compound may be a non-linear aromatic compound used as a linker for manufacturing an oligomer probe array. The non-linear silicon compound may reduce self-aggregation so as to form a stable and uniform monolayer. As a result, upon hybridization analysis, the fluorescent intensity may be increased.

Abstract: A method of manufacturing a microarray includes providing a substrate having a surface that is immobilized with a functional group protected with an acid-labile protecting group and capable of coupling with an oligomer probe, providing a photoacid generator onto the substrate, disposing on the substrate an imprint template comprising a convex region and a plurality of concave regions surrounding the convex region so that the convex region contacts with or is adjacent to an upper surface of the substrate to define a plurality of reaction zones by the upper surface of the substrate and the convex region and the concave regions of the imprint template, exposing one or more of the reaction zones to light so that an acid is generated by the photoacid generator in the one or more exposed reaction zones and a functional group in the one or more exposed reaction zones is deprotected by the acid, and providing an oligomer probe onto the substrate so that the oligomer probe couples with the deprotected functional group

Abstract: Provided is a substrate for an oligomer probe array to which a photolabile material having an acetylene derivative is directly attached or attached via a linker.