Abstract: A semiconductor memory device may include first gate structures each including first real gate lines and first insulating layers that are alternately stacked. The device may also include first dummy gate lines located on the first gate structures, a separation insulating structure configured to extend between the first dummy gate lines and between the first gate structures, and a second gate structure located on the first gate structures and the separation insulating structure and comprising a second dummy gate line having a greater width than each of the first dummy gate lines.

Abstract: Comestible products, for example beverage products, are disclosed containing encapsulated probiotic bacteria having resistance to subjection to at least thermal and acidic conditions. Beverage products include at least one aqueous liquid and capsules comprising a gelled mixture of alginate and denatured protein, and probiotic bacteria entrapped within the gelled mixture. The average particle size of the capsules is optionally less than 1000 microns (?m) in diameter, such as less than 500 ?m in diameter. Methods are provided for making such encapsulated probiotics by providing a mixture comprising sodium alginate, denatured protein and active probiotic cells, and combining the mixture with a divalent cation to initiate cold gelation of the sodium alginate and denatured protein to form a second mixture. The second mixture is passed through an opening having a diameter of less than 1000 ?m to form capsules. The weight ratio of protein to alginate is from 1:1 to 9:1.

Abstract: Comestible products, for example beverage products, are disclosed containing encapsulated probiotic bacteria having resistance to subjection to at least thermal and acidic conditions. Beverage products include at least one aqueous liquid and capsules comprising a gelled mixture of alginate and denatured protein, and probiotic bacteria entrapped within the gelled mixture. The average particle size of the capsules is optionally less than 1000 microns (?m) in diameter, such as less than 500 ?m in diameter. Methods are provided for making such encapsulated probiotics by providing a mixture comprising sodium alginate, denatured protein and active probiotic cells, and combining the mixture with a divalent cation to initiate cold gelation of the sodium alginate and denatured protein to form a second mixture. The second mixture is passed through an opening having a diameter of less than 1000 ?m to form capsules. The weight ratio of protein to alginate is from 1:1 to 9:1.

Abstract: Comestible products, for example beverage products, are disclosed containing encapsulated probiotic bacteria having resistance to subjection to at least thermal and acidic conditions. Beverage products include at least one aqueous liquid and capsules comprising a gelled mixture of alginate and denatured protein, and probiotic bacteria entrapped within the gelled mixture. The average particle size of the capsules is optionally less than 1000 microns (?m) in diameter, such as less than 500 ?m in diameter. Methods are provided for making such encapsulated probiotics by providing a mixture comprising sodium alginate, denatured protein and active probiotic cells, and combining the mixture with a divalent cation to initiate cold gelation of the sodium alginate and denatured protein to form a second mixture. The second mixture is passed through an opening having a diameter of less than 1000 ?m to form capsules. The weight ratio of protein to alginate is from 1:1 to 9:1.

Abstract: Comestible products, for example beverage products, are disclosed containing encapsulated probiotic bacteria having resistance to subjection to at least thermal and acidic conditions. Beverage products include at least one aqueous liquid and capsules comprising a gelled mixture of alginate and denatured protein, and probiotic bacteria entrapped within the gelled mixture. The average particle size of the capsules is optionally less than 1000 microns (?m) in diameter, such as less than 500 ?m in diameter. Methods are provided for making such encapsulated probiotics by providing a mixture comprising sodium alginate, denatured protein and active probiotic cells, and combining the mixture with a divalent cation to initiate cold gelation of the sodium alginate and denatured protein to form a second mixture. The second mixture is passed through an opening having a diameter of less than 1000 ?m to form capsules. The weight ratio of protein to alginate is from 1:1 to 9:1.

Abstract: A method for fabricating a semiconductor memory device includes forming an insulation layer including a contact plug over a substrate structure, forming a metal line structure over the insulation layer, the metal line structure including a patterned diffusion barrier layer and a metal line and contacting the contact plug, and oxidizing a surface of the metal line to form a passivation layer over the metal line.

Abstract: A method for fabricating a semiconductor device is provided. A substrate includes two different regions, each of which has a different pattern density. A polish target layer is formed over the substrate to cover the patterns in the regions and a planarization guide layer is formed along a top surface of the polish target layer. The planarization guide layer has a polish selectivity ratio with respect to the polish target layer. Subsequently, the planarization guide layer formed in a first region is removed such that the planarization guide layer remains only in a second region having the patterns with low pattern density and the remaining planarization guide layer and the polish target layer are polished to remove a step between the first and second regions.

Abstract: A method for forming a contact plug in a semiconductor device includes providing a substrate where an isolation structure is formed, forming an insulation layer over the substrate, wherein the insulation layer has a contact hole exposing an active region between the isolation structure and the insulation layer performing a cleaning process by adjusting a selectivity between the isolation structure and the insulation layer to remove residues of the insulation layer existing over a bottom portion of the contact hole without a loss of the isolation structure, and forming a contact plug isolated in the contact hole.

Abstract: A method for fabricating a semiconductor memory device includes forming an insulation layer including a contact plug over a substrate structure, forming a metal line structure over the insulation layer, the metal line structure including a patterned diffusion barrier layer and a metal line and contacting the contact plug, and oxidizing a surface of the metal line to form a passivation layer over the metal line.

Abstract: A method of manufacturing a flash memory device wherein a stacked structure of an oxide and nitride or the reverse is applied to insulation spacers provided on sidewalls of gates for forming source/drain regions. After completing the source/drain regions, spacers are formed on sidewalls of the gates by using an oxide film as a contacting buffer, thus minimizing the interference between gates and reducing the stress to cells, overcoming the disturbance of threshold voltage.