Abstract: The present invention relates to a substrate for an organic electronic element that enables surface resistance to be reduced and light-extraction efficiency improved, the substrate including: a base substrate; a scattering layer which is formed on the base substrate and includes an conductive pattern for reducing the surface resistance of an electrode, scattering particles for scattering light and a binder, and which forms an uneven structure in the surface opposite the base substrate; and a planarizing layer which is formed on the scattering layer and flattens the surface undulations caused by the uneven structure of the scattering layer, wherein the refractive index (Na) of the scattering particles and the refractive index (Nb) of the planarizing layer satisfy the relationship in formula 1 below. [Formula 1] |Na—Nb|?0.3. In the formula as used herein, Na signifies the refractive index of the scattering particles and Nb signifies the refractive index of the planarizing layer.

Abstract: Provided is a substrate for an organic light emitting diode including a base substrate, a high refractive scattering layer formed on the base substrate, and having a scattering particle scattering light in a high refractive material, and an adhesive layer formed between the base substrate and the high refractive scattering layer to laminate the base substrate with the high refractive scattering layer, wherein the high refractive scattering layer has a structure in which the scattering particle is immersed in the high refractive material, an average thickness of the high refractive scattering layer is smaller than an average diameter of the scattering particle, a surface of the high refractive scattering layer laminated with the base substrate by the adhesive layer has unevenness formed by the scattering particle, the opposite surface of the high refractive scattering layer laminated with the base substrate by the adhesive layer has a planarized surface, and a method for manufacturing the same.

Abstract: Provided is a substrate for an organic light emitting diode including a base substrate, a high refractive scattering layer formed on the base substrate, and having a scattering particle scattering light in a high refractive material, and an adhesive layer formed between the base substrate and the high refractive scattering layer to laminate the base substrate with the high refractive scattering layer, wherein the high refractive scattering layer has a structure in which the scattering particle is immersed in the high refractive material, an average thickness of the high refractive scattering layer is smaller than an average diameter of the scattering particle, a surface of the high refractive scattering layer laminated with the base substrate by the adhesive layer has unevenness formed by the scattering particle, the opposite surface of the high refractive scattering layer laminated with the base substrate by the adhesive layer has a planarized surface, and a method for manufacturing the same.

Abstract: An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.

Abstract: A pixel cell includes a substrate, an epitaxial layer, and a photo converting device in the epitaxial layer. The epitaxial layer has a doping concentration profile of embossing shape, and includes a plurality of layers that are stacked on the substrate. The photo converting device does not include a neutral region that has a constant potential in the vertical direction. Therefore, the image sensor including the pixel cell has high quantization efficiency, and a crosstalk between photo-converting devices is decreased.

Abstract: An image sensor includes a photoelectric converter, a reflector, and a charge carrier guiding region. The reflector is disposed under the photoelectric converter, and the charge carrier guiding region is disposed between the photoelectric converter and the reflector. The reflector reflects incident light passed by the photoelectric converter back through the photoelectric converter for increasing photoelectric conversion efficiency and reduced crosstalk. The charge carrier guiding region dissipates undesired charge carriers for further increasing photoelectric conversion efficiency.

Abstract: An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.

Abstract: Provided are a pixel circuit, a photoelectric converter, and an image sensing system thereof. The pixel circuit includes a photodiode and an output unit. The photodiode generates a first photo charge to detect the distance from an object and a second photo charge to detect the color of the object. The output unit generates at least one depth signal used to detect the distance based on the first photo charge generated by the photodiode, and a color signal used to detect the color of the object based on the second photo charge.

Abstract: A pixel cell includes a substrate, an epitaxial layer, and a photo converting device in the epitaxial layer. The epitaxial layer has a doping concentration profile of embossing shape, and includes a plurality of layers that are stacked on the substrate. The photo converting device does not include a neutral region that has a constant potential in the vertical direction. Therefore, the image sensor including the pixel cell has high quantization efficiency, and a crosstalk between photo-converting devices is decreased.

Abstract: A pixel circuit array may include pixel circuits and/or a global reset transistor that has a first end connected to a second end of a reset transistor and is turned on or off in response a global reset signal. Each pixel circuit may include: a transmission transistor that may receive and/or transmit photocharges through ends of the transmission transistor in response to a transmission control signal; the reset transistor that may have a first end connected to the second end of the transmission transistor and may be turned on or off in response a reset control signal; a source-follower transistor that may receive a signal from the second end of the reset transistor and/or may be turned on or off in response the received signal; and/or a selection transistor that may be connected to the source-follower transistor and/or may be turned on or off in response a selection control signal.

Abstract: An image sensor includes a photoelectric converter, a reflector, and a charge carrier guiding region. The reflector is disposed under the photoelectric converter, and the charge carrier guiding region is disposed between the photoelectric converter and the reflector. The reflector reflects incident light passed by the photoelectric converter back through the photoelectric converter for increasing photoelectric conversion efficiency and reduced crosstalk. The charge carrier guiding region dissipates undesired charge carriers for further increasing photoelectric conversion efficiency.

Abstract: An image sensor may include a plurality of photodiodes for performing a photo-electric conversion and a plurality of microlenses. Each of the microlenses is formed over one of the photodiodes. The image sensor may further include a vertical light generating portion formed over the microlenses and configured to refract each of plurality of incident light rays such that the light rays are vertically incident on the microlenses.

Abstract: Modified electrically conductive adhesives and methods of preparation thereof, are disclosed.

Abstract: Provided is a layout of a CMOS image sensor having an asymmetrical pixel structure in which a plurality of photodiodes may share a transistor block. The layout may include a first region in which a plurality of photodiodes are arranged asymmetrically on a semiconductor substrate, a second region including a metal shield layer arranged on an upper surface of the first region, and a third region arranged on an upper surface of the second region. The metal shield layer may be arranged asymmetrically according to the layout of the photodiodes.

Abstract: The present invention relates generally to conductive polymer composites, electrically conductive adhesives, and methods of producing the same. The conductive polymer composites and electrically conductive adhesives may be used for electronic component interconnects, flip chip interconnections, electrical connections to circuit boards, jumper connections, or similar uses. The method of forming a conductive polymer composite includes mixing conductive metal flakes, functionalized conductive metal nanoparticles, and a polymer precursor and curing the polymer precursor to form a composite. In one embodiment, the conductive polymer composites may be composed of microparticles of silver flake and sintered silver nanoparticles between the silver flakes. The polymer composites have an electrical conductivity of less than 10?5 ?·cm.

Abstract: An image sensor includes a semiconductor substrate on which a plurality of photo diodes are formed. A plurality of interlayer dielectrics are formed above the semiconductor substrate, and a plurality of metal lines are formed on each of the interlayer dielectrics. A plurality of micro lenses are formed above the uppermost one of the interlayer dielectrics. The light passing through the zoom lenses is incident on the respective micro lenses. The plurality metal lines formed on at least one of the plurality of interlayer dielectrics have the same width.

Abstract: A CMOS image sensor includes digital signal processing on-chip within the CMOS image sensor before being transmitted to an ISP (image signal processor) within an image sensor system. An on-chip digital processing unit is formed on a same one integrated circuit die with a pixel array and performs the steps of: performing a first set of at least one correction operation on the original digital signal to generate a corrected digital signal; formatting the corrected digital signal for the standard interface to generate a processed digital signal; and sending the processed digital signal to the ISP (image signal processor) via the standard interface.

Abstract: An image sensor may include a plurality of photodiodes for performing a photo-electric conversion and a plurality of microlenses. Each of the microlenses is formed over one of the photodiodes. The image sensor may further include a vertical light generating portion formed over the microlenses and configured to refract each of plurality of incident light rays such that the light rays are vertically incident on the microlenses.

Abstract: Modified electrically conductive adhesives and methods of preparation thereof, are disclosed.

Abstract: Modified electrically conductive adhesives and methods of preparing thereof, are disclosed.