Patents by Inventor Kyoungsil Park

Kyoungsil Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of fabricating semiconductor devices with flattened hardmask layers
    Patent number: 10503072
    Abstract: Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.
    Type: Grant
    Filed: October 13, 2017
    Date of Patent: December 10, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: DoYoung Kim, Kyoungsil Park
  • Method of processing substrate and method of fabricating semiconductor device using the same
    Patent number: 10431506
    Abstract: Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: October 1, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dusik Bae, Yoonmi Lee, Hyeogki Kim, Kyoungsil Park, JungDae Park
  • METHOD OF PROCESSING SUBSTRATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20180204777
    Abstract: Disclosed are a method of processing a substrate and a method of fabricating a semiconductor device using the same. The method of processing a substrate comprises forming a mask layer on a substrate, inspecting the mask layer, and forming a mask pattern based on an inspection result of the mask layer. The operation of inspecting the mask layer comprises using Raman spectrum analysis to detect defects in the mask layer.
    Type: Application
    Filed: December 20, 2017
    Publication date: July 19, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dusik BAE, Yoonmi Lee, Hyeogki Kim, Kyoungsil Park, JungDae Park
  • Methods of Fabricating Semiconductor Devices with Flattened Hardmask Layers
    Publication number: 20180039181
    Abstract: Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.
    Type: Application
    Filed: October 13, 2017
    Publication date: February 8, 2018
    Inventors: DoYoung Kim, Kyoungsil Park
  • Methods of fabricating semiconductor devices with flattened hardmask layers
    Patent number: 9829795
    Abstract: Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.
    Type: Grant
    Filed: June 12, 2015
    Date of Patent: November 28, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: DoYoung Kim, Kyoungsil Park
  • Methods of Fabricating Semiconductor Devices with Flattened Hardmask Layers
    Publication number: 20160071736
    Abstract: Methods of fabricating semiconductor devices may include forming a hardmask layer including a photosensitive hardmask material on lower structures. The hardmask layer may include a lower portion and an upper portion thereon. An exposing and developing process may be performed on the hardmask layer to remove the upper portion of the hardmask layer and thereby form a hardmask structure with a substantially flat top surface.
    Type: Application
    Filed: June 12, 2015
    Publication date: March 10, 2016
    Inventors: DoYoung Kim, Kyoungsil Park