Patents by Inventor Kyoung-Soo Kwon

Kyoung-Soo Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7227389
    Abstract: A circuit for compensating for an offset voltage in a PhotoDetector Integrated Circuit (PDIC). The circuit includes a temperature detection unit, a current transfer unit and a current adjustment unit. The temperature detection unit generates a current that varies with variation in surrounding temperature. The current transfer unit transfers the generated current. The current adjustment unit adjusts the current transferred from the current transfer unit at a predetermined ratio and outputs the adjusted current.
    Type: Grant
    Filed: April 29, 2005
    Date of Patent: June 5, 2007
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jung Chul Gong, Kyoung Soo Kwon, Hyeon Seok Hwang, Sang Suk Kim
  • Patent number: 7209001
    Abstract: Disclosed is a circuit for compensating for an offset voltage of a monitoring photodiode. After the offset voltage is measured in a photodiode test, current source and offset resistors are added according to the measured resistances, thereby compensating for the offset voltage.
    Type: Grant
    Filed: March 9, 2005
    Date of Patent: April 24, 2007
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Chang Woo Ha, Kyoung Soo Kwon, Deuk Hee Park, Sang Cheol Shin
  • Patent number: 7180374
    Abstract: Disclosed herein is a PhotoDiode Integrated Circuit (PDIC) having multiple gain states. The PDIC includes a current-voltage conversion unit, an input amplification stage circuit, a reference resistance unit, a feedback resistance unit, and a switching unit. The current-voltage conversion unit converts a current signal into a voltage signal. The input amplification stage circuit is connected to the current-voltage conversion unit to receive and amplify the voltage signal. The reference resistance unit is connected to the second input terminal of the input amplification stage circuit. The output amplification stage circuit is connected to the output terminal of the input amplification stage circuit. The feedback resistance unit is connected in parallel between the second input terminal and the output terminal of the output amplification stage circuit, and is configured to have a plurality of resistance elements. The switching unit selectively connects the plurality of resistance elements.
    Type: Grant
    Filed: April 15, 2005
    Date of Patent: February 20, 2007
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Sang Suk Kim, Kyoung Soo Kwon, Jung Chul Gong, Hyeon Seok Hwang
  • Publication number: 20070026630
    Abstract: A reliable gap-filling process is performed in the manufacturing of a semiconductor device. An apparatus for performing the gap-filling process includes a chamber in which a wafer chuck is disposed, a plasma generator for generating plasma used to etch the wafer, an end-point detection unit for detecting the point at which the etching of the wafer is to be terminated, and a controller connected to the end-point detection unit. The end-point detection unit monitors the structure being etched at a region outside the opening that is to be filled, and generates in real time data representative of the layer that is being etched. As soon as an underlying layer is exposed and begins to be etched, an end-point detection signal is generated and the etching process is terminated. In the case in which the layer being etched is an oxide layer, a uniform etching is achieved despite any irregularity that exists in the thickness to which the oxide layer is formed.
    Type: Application
    Filed: May 30, 2006
    Publication date: February 1, 2007
    Inventors: Yong-kyu Kim, Jin-ho Jeon, Kyoung-soo Kwon
  • Patent number: 7141826
    Abstract: Disclosed is a multi-wavelength light receiving element. The multi-wavelength light receiving element includes a first type substrate. A first intrinsic layer is positioned on the first type substrate. A heavily-doped second-type buried layer is positioned on the first intrinsic layer. A second intrinsic layer is positioned on the heavily-doped second-type buried layer. A plurality of heavily-doped first-type fingers are shallowly embedded in the second intrinsic layer. A first type has a doped state that is opposite to a second type.
    Type: Grant
    Filed: December 22, 2004
    Date of Patent: November 28, 2006
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Joo Yul Ko, Shin Jae Kang, Kyoung Soo Kwon
  • Patent number: 7079194
    Abstract: An RF modulator includes a C/L delay compensation function of compensating for a delay of a luminance signal with respect to a chrominance signal occurring during demodulating a video signal in a TV set. The RF modulator includes a C/L delay compensation unit delaying a luminance signal by 170 nsec and combining the delayed luminance signal with a chrominance signal to output a composite image signal having a C/l delay of ?170 nsec and a frequency modulation unit modulating the video signal received from the C/L delay compensation unit into a high frequency signal of a predetermined broadcasting channel in a single module or package. The RF modulator outputs a video signal having the luminance signal delayed by 170 nsec with respect to the chrominance signal and complies with a C/L delay standard without adding any additional C/L delay compensation unit to the RF modulator.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: July 18, 2006
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Jin Lee, Sang Suk Kim, Chae Dong Go, Youn Joong Lee, Kyoung Soo Kwon
  • Patent number: 7057423
    Abstract: A current-voltage transforming circuit used with a photo detector integrated circuit includes a photo detector to detect a photo signal (laser beam signal) to generate a photo current, an amplifier to amplify the photo current, which corresponds to the photo signal, an emitter follower to receive an output of the amplifier, an output buffer to receive an output of the emitter follower, a current detecting limiter unit having an input terminal and an output terminal and turned on to generate a limiter current when the detected current outputted from the amplifier is greater than a predetermined current, and a feedback resistor connected between the photo detector and an output terminal of the output buffer.
    Type: Grant
    Filed: November 12, 2003
    Date of Patent: June 6, 2006
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Chang-Woo Ha, Kyoung-Soo Kwon, Deuk-Hee Park, Joo-Yul Ko
  • Publication number: 20060049858
    Abstract: The present invention relates generally to a buffer of a drive Integrated Circuit (IC) and, more particularly, to a buffer of a drive IC for driving a spatial light modulator that can meet a desired dynamic slew rate characteristic by controlling current that affects a slew rate.
    Type: Application
    Filed: November 18, 2004
    Publication date: March 9, 2006
    Inventors: Byung-Hoon Kim, Kyoung-Soo Kwon, Chae-Dong Go, Chan-Woo Park
  • Publication number: 20050077589
    Abstract: Disclosed are a light receiving element for blue rays and a method for manufacturing the light receiving element, more particularly, it is to provide a light receiving element for blue rays, of which a junction depth becomes shallow so as to easily receive the blue rays having a short wavelength with a short penetration depth, and a method for manufacturing the light receiving element.
    Type: Application
    Filed: December 3, 2003
    Publication date: April 14, 2005
    Inventors: Jung-Chul Gong, Kyoung-Soo Kwon, Joo-Yul Ko, Sang-Suk Kim
  • Patent number: 6864724
    Abstract: A current to voltage conversion circuit for improving the speed of a photoelectric conversion device and frequency characteristics of an amplifier by improving a method for switching the gain of an amplification circuit for a photo detector integrated circuit (PDIC). Photocurrent generated in the photoelectric conversion device, such as a photodiode, is transferred to the amplifier by means of current mirroring, so as to raise a bias voltage to the photoelectric conversion device and enhance a response speed thereof. Further, the amount of current generated in the photoelectric conversion device is adjusted through control of a resistance ratio of a current mirror circuit. Therefore, a fixed feedback resistor can be used for the amplifier irrespective of modes, so as to enhance frequency characteristics of the amplifier.
    Type: Grant
    Filed: December 4, 2003
    Date of Patent: March 8, 2005
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Sang-Suk Kim, Kyoung-Soo Kwon, Chang-Woo Ha, Jung-Chul Gong
  • Publication number: 20050046448
    Abstract: A current-voltage transforming circuit used with a photo detector integrated circuit includes a photo detector to detect a photo signal (laser beam signal) to generate a photo current, an amplifier to amplify the photo current, which corresponds to the photo signal, an emitter follower to receive an output of the amplifier, an output buffer to receive an output of the emitter follower, a current detecting limiter unit having an input terminal and an output terminal and turned on to generate a limiter current when the detected current outputted from the amplifier is greater than a predetermined current, and a feedback resistor connected between the photo detector and an output terminal of the output buffer.
    Type: Application
    Filed: November 12, 2003
    Publication date: March 3, 2005
    Inventors: Chang-Woo Ha, Kyoung-Soo Kwon, Deuk-Hee Park, Joo-Yul Ko
  • Publication number: 20040126922
    Abstract: Disclosed are a photo diode sensing a short-wavelength light in a blue band, an opto-electronic integrated circuit device comprising the photo diode, and a method of manufacturing the photo diode. The method for manufacturing the photo diode, comprising the steps of: preparing a silicon substrate; forming a first conductive impurity region at a first region on the silicon substrate; forming a second conductive impurity region at a second region on the silicon substrate, said second region being separated from the first region; and forming a porous silicon layer by chemically etching a surface of the second conductive impurity region.
    Type: Application
    Filed: July 2, 2003
    Publication date: July 1, 2004
    Inventors: Joo Yul Ko, Sang Suk Kim, Deuk Hee Park, Kyoung Soo Kwon
  • Publication number: 20030156228
    Abstract: An RF modulator includes a C/L delay compensation function of compensating for a delay of a luminance signal with respect to a chrominance signal occurring during demodulating a video signal in a TV set. The RF modulator includes a C/L delay compensation unit delaying a luminance signal by 170nsec and combining the delayed luminance signal with a chrominance signal to output a composite image signal having a C/l delay of −170nsec and a frequency modulation unit modulating the video signal received from the C/L delay compensation unit into a high frequency signal of a predetermined broadcasting channel in a single module or package. The RF modulator outputs a video signal having the luminance signal delayed by 170nsec with respect to the chrominance signal and complies with a C/L delay standard without adding any additional C/L delay compensation unit to the RF modulator.
    Type: Application
    Filed: February 19, 2003
    Publication date: August 21, 2003
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jong Jin Lee, Sang Suk Kim, Chae Dong Go, Youn Joong Lee, Kyoung Soo Kwon