Abstract: A semiconductor lead frame and a fabricating method thereof are provided. The semiconductor lead frame includes a metal substrate, and a multi-layered plating layer including a copper-nickel alloy layer formed on the metal substrate, and a palladium or palladium alloy layer formed on the copper-nickel alloy layer.

Abstract: A method for forming a plating layer of a lead frame having excellent anti-corrosion properties is provided. At least a portion of a lead frame is plated, then a first heating of the plated portion of the lead frame to a first temperature is performed, and finally a second heating of the first heated plated portion of the lead frame to a second temperature higher than the first temperature is performed. The lead frame manufactured by this method has excellent anti-corrosion properties, such that deterioration of the plating layer, by cracking and inferior solderability, is not observed.

Abstract: A method for manufacturing a lead frame includes degreasing and activating the surface of a metal sheet, providing the plating solution containing nickel(II) sulfamate tetrahydrate, (Ni(H.sub.2 NSO.sub.3).sub.2.4H.sub.2 O), manganese(II) sulfamate tetrahydrate (Mn(H.sub.2 NSO.sub.3).sub.2.4H.sub.2), nickel (II) chloride hexahydrate (NiCl.sub.2.6H.sub.2 O) and boric acid, plating the metal sheet in the plating solution to form a Ni--Mn alloy layer, and forming a Pd or Pd alloy layer on the Ni--Mn alloy layer.