Abstract: Disclosed are a jet nozzle, and a combustor and a gas turbine including the jet nozzle. The jet nozzle is formed on an inner surface of a combustor to supply fluid into an interior of a liner of the combustor in a direction intersecting with a progress direction of combustion gases primarily combusted in a combustion chamber in the interior of the liner. The jet nozzle includes a body section provided with a fluid inlet on one end, through which fluid is introduced, and a fluid outlet on the other end, through which the fluid introduced through the fluid inlet is discharged, and a swirler section provided inside the body section to allow a portion of the fluid introduced into one side of the body section to rotate in a clockwise direction and to allow the rest of the fluid introduced into the other side of the body section to rotate in a counterclockwise direction.

Abstract: A hollow nozzle including a tubular nozzle casing and a plurality of rotary vanes arranged radially along an inner surface of an inlet of the nozzle casing, through which compressed air is introduced, forming a hollow center at the center of the nozzle casing through which the compressed air flows, each of the rotary vanes including a first fuel injection hole through which a first type of fuel having a predetermined flame propagation speed is injected toward the hollow center, and a second fuel injection hole through which a second type of fuel having a higher flame propagation speed than the first type of fuel is injected, a combustor including the hollow nozzle, and a gas turbine including the combustor.

Abstract: Proposed are a jet nozzle, and a combustor and a gas turbine including the jet nozzle. The jet nozzle is formed on an inner surface of a combustor to supply fluid into an interior of a liner of the combustor in a direction intersecting with a progress direction of combustion gases primarily combusted in a combustion chamber in the interior of the liner. The jet nozzle includes a fluid inlet, through which fluid is externally introduced, and a fluid outlet including a first fluid outlet member, through which a portion of the fluid introduced through the fluid inlet is discharged so as to be rotated in one direction, and a second fluid outlet member, through which the rest of the fluid is discharged so as to be rotated in a direction different from the rotation direction of the fluid discharged from the first fluid outlet member.

Abstract: Proposed are a jet nozzle, and a combustor and a gas turbine including the jet nozzle. The jet nozzle is formed on an inner surface of a combustor to supply fluid into an interior of a liner of the combustor in a direction intersecting with a progress direction of combustion gases primarily combusted in a combustion chamber in the interior of the liner. The jet nozzle includes a body section provided with a fluid inlet on a first end, through which fluid is introduced, and a fluid outlet on a second end, through which the fluid introduced through the fluid inlet is discharged while generating a vortex, and a baffle section formed on an inner peripheral surface of the second end of the body section and configured to enhance the generation of a counter-rotary shear layer vortex in the fluid discharged out of the fluid outlet through the body section.

Abstract: Disclosed herein is a nozzle for a combustor that burns fuel containing hydrogen, which includes a plurality of mixing tubes through which air and fuel flow, and a multi-tube configured to insert the mixing tubes thereinto and support the same, wherein each of the mixing tubes has an inlet formed at a longitudinal end thereof for introduction of a first fluid, and a plurality of supply ports formed on a circumferential surface thereof for introduction of a second fluid, the mixing tube has a plurality of first supply ports formed on a first surface thereof, and a plurality of second supply ports formed on a second surface facing the first surface, and the first supply ports are staggered with the second supply ports.

Abstract: Disclosed is a hybrid power generation facility.

Abstract: Disclosed are an air supply device and an air supply method for a hybrid power generation facility in which a gas turbine compresses air introduced from an outside, mixes the compressed air with fuel, and burns a mixture of the compressed air and the fuel to produce combustion gas. The air supply device includes a mixing chamber configured to selectively receive the combustion gas from the gas turbine, an air preheater configured to supply air to the mixing chamber, a burner configured to burn a fluid supplied from the mixing chamber, a first over-firing air supplier configured to receive a fluid from the gas turbine or the air preheater, a first pipeline connecting the gas turbine and the mixing chamber, and a second pipeline connecting the gas turbine and the first over-firing air supplier.

Abstract: Disclosed is a hybrid power generation facility.

Abstract: Disclosed are an air supply device and an air supply method for a hybrid power generation facility in which a gas turbine compresses air introduced from an outside, mixes the compressed air with fuel, and burns a mixture of the compressed air and the fuel to produce combustion gas. The air supply device includes a mixing chamber configured to selectively receive the combustion gas from the gas turbine, an air preheater configured to supply air to the mixing chamber, a burner configured to burn a fluid supplied from the mixing chamber, a first over-firing air supplier configured to receive a fluid from the gas turbine or the air preheater, a first pipeline connecting the gas turbine and the mixing chamber, and a second pipeline connecting the gas turbine and the first over-firing air supplier.

Abstract: A three-dimensional semiconductor memory device includes first and second gate stacked structures, disposed on a base substrate, and stacked in a direction perpendicular to a surface of the base plate, the first and second gate stacked structures including gate electrodes spaced apart from each other and stacked; a through region passing through the first and second gate stacked structures and surrounded by the first and second gate stacked structures; and vertical channel structures passing through the first and second gate stacked structures, wherein the first gate stacked structure has first contact pads adjacent to the through region and arranged in a stepped shape, the second gate stacked structure having second contact pads adjacent to the through region and arranged in a stepped shape, at least a portion of the second contact pads overlap the first contact pads on one side of the through region.

Abstract: A three-dimensional semiconductor memory device includes: a base substrate; a gate stack structure disposed on the base substrate, and including gate electrodes stacked in a direction substantially perpendicular to a top surface of the base substrate; a penetration region penetrating through the gate stack structure and surrounded by the gate stack structure; and vertical channel structures passing through the gate stack structure. The lowermost gate electrodes among the gate electrodes are spaced apart from each other, and a portion of at least one of the lowermost gate electrodes has a shape bent toward the penetration region.

Abstract: A three-dimensional semiconductor memory device includes: a base substrate; a gate stack structure disposed on the base substrate, and including gate electrodes stacked in a direction substantially perpendicular to a top surface of the base substrate; a penetration region penetrating through the gate stack structure and surrounded by the gate stack structure; and vertical channel structures passing through the gate stack structure. The lowermost gate electrodes among the gate electrodes are spaced apart from each other, and a portion of at least one of the lowermost gate electrodes has a shape bent toward the penetration region.

Abstract: A three-dimensional semiconductor memory device includes first and second gate stacked structures, disposed on a base substrate, and stacked in a direction perpendicular to a surface of the base plate, the first and second gate stacked structures including gate electrodes spaced apart from each other and stacked; a through region passing through the first and second gate stacked structures and surrounded by the first and second gate stacked structures; and vertical channel structures passing through the first and second gate stacked structures, wherein the first gate stacked structure has first contact pads adjacent to the through region and arranged in a stepped shape, the second gate stacked structure having second contact pads adjacent to the through region and arranged in a stepped shape, at least a portion of the second contact pads overlap the first contact pads on one side of the through region.