Abstract: Provided are: an optical laminate comprising a second adhesive layer, a second adhesive layer laminated on the second adhesive layer, and a light shield part laminated between the first adhesive layer and the second adhesive layer; an optical member comprising same; and an optical display device including same.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

Abstract: Provided is a catalyst layer for fuel cell having improved heat-dissipating performance and durability. The catalyst layer for fuel cell according to the present invention is a catalyst layer for fuel cell comprising a first composite and a second composite, wherein the first composite includes: a supporting material, a catalyst including metal particles supported on the supporting material, and a first ionomer coated on the surface of the catalyst; the second composite includes a heat-dissipating material and a second ionomer, the second ionomer is not coated on the surface of the catalyst, and the first ionomer and the second ionomer are identical with or different from each other.

Abstract: The present invention relates to a method of manufacturing a separator-composite electrode having a multilayer-structured inorganic layer and a separator-composite electrode manufactured thereby. The present invention provides a method of manufacturing a separator-composite electrode and a separator-composite electrode using the same, wherein there is no separator substrate by forming an inorganic layer serving as an insulating layer in multiple layers, thereby safety is improved and the capacity of a battery is not reduced compared to a conventional battery.

Abstract: Proposed is a door hinge that includes an arm installed on a door, a housing installed in a main body of a mechanism provided with a door and connected to the arm by a hinge shaft, a damper casing connected to the arm inside the housing by the hinge shaft and having one surface supported by a support portion of the housing, a pair of main links connected to the arm inside the housing by a link shaft to linearly move, a main spring assembly including a spring lever and a main spring inserted into the spring lever, and a damper provided inside the damper casing and moving along the periphery of the arm.

Abstract: Disclosed herein are a cooperative driving method based on driving negotiation and an apparatus for the same. The cooperative driving method is performed by a cooperative driving apparatus for cooperative driving based on driving negotiation, and includes determining whether cooperative driving is possible in consideration of a driving mission of a requesting vehicle that requests cooperative driving with neighboring vehicles, when it is determined that cooperative driving is possible, setting a responding vehicle from which cooperative driving is to be requested among the neighboring vehicles, performing driving negotiation between the requesting vehicle and the responding vehicle based on a driving negotiation protocol, and when the driving negotiation is completed, performing cooperative driving by providing driving guidance information for vehicle control to at least one of the requesting vehicle and the responding vehicle.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

Abstract: An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a first buffer layer on the substrate; a first semiconductor layer on the first buffer layer; a first gate insulating layer on the first semiconductor layer; a first gate electrode and a blocking layer on the first gate insulating layer; a second buffer layer on the first gate electrode; a second semiconductor layer on the second buffer layer; a second gate insulating layer on the second semiconductor layer; and a second gate electrode on the second gate insulating layer.

Abstract: An adhesive film, an optical member including the same, and an optical display apparatus including the same are provided. An adhesive film includes a (meth)acrylic based copolymer, a (meth)acrylic based oligomer, and a curing agent and has a maximum shear strain of 50% or less at 60° C. and a peel strength of 600 gf/25 mm or more with respect to a polyimide based film at 25° C.

Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

Abstract: A semiconductor device is provided. The semiconductor device comprises a first memory unit including a first memory area, and a first logic area electrically connected to the first memory area, the first logic area including a cache memory and an interface port. The first memory unit executes a data transmission and reception operation with a memory unit adjacent to the first memory unit via the first interface port and the cache memory.

Abstract: A motor plate type coil forming apparatus forms a plate type coil wound on a stator of a motor by a squeeze casting method. In particular, the apparatus includes: i) a main frame including a lower frame and an upper frame; ii) a mold unit including a lower mold elastically connected to the lower frame to be movably installed in a vertical direction, and an upper mold movably installed in the upper frame in the vertical direction corresponding to the lower mold; and iii) a molten metal pressurizing unit including a plunger that is movably installed in the lower frame in a vertical direction corresponding to the lower mold. In particular, the lower mold may include a sleeve provided to be vertically coupled to the plunger, and a plurality of coil forming parts provided to form a cavity connected to the sleeve.

Abstract: An artificial neural network (ANN) system includes a processor, a virtual overflow detection circuit and a data format controller. The processor performs node operations with respect to a plurality of nodes included in each layer of an ANN to obtain a plurality of result values of the node operations and performs a quantization operation on the obtained plurality of result values based on a k-th fixed-point format for a current quantization of the each layer to obtain a plurality of quantization values. The virtual overflow detection circuit generates a virtual overflow information indicating a distribution of valid bit numbers of the obtained plurality of quantization values. The data format controller determines a (k+1)-th fixed-point format for a next quantization of the each layer based on the generated virtual overflow information. An overflow and/or an underflow are prevented efficiently by controlling the fixed-point format using the virtual overflow.

Abstract: A semiconductor device is provided. The semiconductor device comprises a first memory unit including a first memory area, and a first logic area electrically connected to the first memory area, the first logic area including a cache memory and an interface port. The first memory unit executes a data transmission and reception operation with a memory unit adjacent to the first memory unit via the first interface port and the cache memory.

Abstract: A semiconductor device is provided. The semiconductor device comprises a first memory unit including a first memory area, and a first logic area electrically connected to the first memory area, the first logic area including a cache memory and an interface port. The first memory unit executes a data transmission and reception operation with a memory unit adjacent to the first memory unit via the first interface port and the cache memory.

Abstract: A neural network optimizing device includes a performance estimating module that outputs estimated performance according to performing operations of a neural network based on limitation requirements on resources used to perform the operations of the neural network. A portion selecting module receives the estimated performance from the performance estimating module and selects a portion of the neural network which deviates from the limitation requirements. A new neural network generating module generates, through reinforcement learning, a subset by changing a layer structure included in the selected portion of the neural network, determines an optimal layer structure based on the estimated performance provided from the performance estimating module, and changes the selected portion to the optimal layer structure to generate a new neural network. A final neural network output module outputs the new neural network generated by the new neural network generating module as a final neural network.

Abstract: A semiconductor device is provided. The semiconductor device comprises a first memory unit including a first memory area, and a first logic area electrically connected to the first memory area, the first logic area including a cache memory and an interface port. The first memory unit executes a data transmission and reception operation with a memory unit adjacent to the first memory unit via the first interface port and the cache memory.

Abstract: An artificial neural network (ANN) system includes a processor, a virtual overflow detection circuit and a data format controller. The processor performs node operations with respect to a plurality of nodes included in each layer of an ANN to obtain a plurality of result values of the node operations and performs a quantization operation on the obtained plurality of result values based on a k-th fixed-point format for a current quantization of the each layer to obtain a plurality of quantization values. The virtual overflow detection circuit generates a virtual overflow information indicating a distribution of valid bit numbers of the obtained plurality of quantization values. The data format controller determines a (k+1)-th fixed-point format for a next quantization of the each layer based on the generated virtual overflow information. An overflow and/or an underflow are prevented efficiently by controlling the fixed-point format using the virtual overflow.

Abstract: An electronic device includes a first camera that obtains a first image, a second camera that obtains a second image having a disparity with the first image, a memory that stores a first calibration parameter, and a processor that calibrates at least one of the first image and the second image by using the first calibration parameter and composes the first image and the second image. The processor is configured to collect, if a specified event occurs, images obtained from the first camera and the second camera after the specified event occurs and store the collected images in the memory, to compute a second to calibration parameter based on the images obtained after the specified event occurs, if a specified condition is satisfied, and to update the first calibration parameter with the second calibration parameter.

Abstract: Image capturing methods and image capturing apparatuses are provided. The image capturing method may include setting a target position of a live view image, tacking a moving object from the live view image, estimating a position of the moving object by using information on the tracked moving object, and capturing a still image based on the estimated position when the moving object is positioned on the target position of the live view image.