Abstract: A semiconductor device that includes a lower pattern extending in a first direction, a first channel pattern on the lower pattern, and includes a plurality of first sheet patterns, a second channel pattern on the lower pattern, includes a plurality of second sheet patterns and spaced apart from the first channel pattern, a first gate structure which extends around the first sheet pattern, and includes a first gate electrode and a first gate insulating film, a second gate structure which extends around the second sheet pattern, and includes a second gate electrode and a second gate insulating film, a first gate capping pattern and a second gate capping pattern. The number of first sheet patterns is different from the number of second sheet patterns, and a thickness of the first gate capping pattern is different from a thickness of the second gate capping pattern.

Abstract: A method of manufacturing a display device includes providing an adhesive material layer on a display panel, curing the adhesive material layer to form an adhesive layer, providing a cover layer on the adhesive layer, and adhering the cover layer to the adhesive layer, and a modulus of the adhesive layer at room temperature is in a range of about 103 Pa to about 106 Pa.

Abstract: A method of manufacturing a display device includes providing an adhesive material layer on a display panel, curing the adhesive material layer to form an adhesive layer, providing a cover layer on the adhesive layer, and adhering the cover layer to the adhesive layer, and a modulus of the adhesive layer at room temperature is in a range of about 103 Pa to about 106 Pa.

Abstract: There are provided a display device and a method of fabricating a display device. The display device includes: a substrate including a first surface and a second surface opposite to the first surface; a display element layer disposed on the first surface of the substrate, and a panel bottom member disposed on the second surface of the substrate. The panel bottom member includes: a light-blocking layer including a first base resin and light-blocking particles dispersed in the first base resin; a buffer layer including a second base resin; and a thermal protection member including a thermal protection material. A profile of the light-blocking layer conforms to a profile of the buffer layer in a plan view, and a surface of the light-blocking layer and a surface of the buffer layer are in direct contact with each other.

Abstract: In a method of classifying directional defects on an object straight lines are drawn from any defect among all defects on the object toward adjacent defects. At least three defects that are positioned within an allowable angle from the straight lines are classified as directional defects. Thus, only the directional defects among all the defects on the semiconductor substrate may be accurately classified after performing a chemical mechanical polishing (CMP) process, so that the CMP process may be effectively managed.