Abstract: A display driver circuit includes a source driver configured to output display data to data lines, a controller configured to control the source driver, based on a synchronization signal, and a frequency adjusting circuit configured to extend a first time interval of the synchronization signal from a first length to a second length, such that time interval in which the display data is not output to the data lines is extended, when second image data are not received from an external device during a reference time interval after first image data are received from the external device, and shorten the first time interval, from the second length to a third length, when an instruction is received from the external device after the first time interval is extended to the second length.

Abstract: A display driver circuit includes a source driver configured to output display data to data lines, a controller configured to control the source driver, based on a synchronization signal, and a frequency adjusting circuit configured to extend a first time interval of the synchronization signal from a first length to a second length, such that time interval in which the display data is not output to the data lines is extended, when second image data are not received from an external device during a reference time interval after first image data are received from the external device, and shorten the first time interval, from the second length to a third length, when an instruction is received from the external device after the first time interval is extended to the second length.

Abstract: A display device includes at least one display panel and a display driver integrated circuit (DDI). The at least one display panel includes a first display region and a second display region. The DDI includes a first timing controller-embedded driver (TED) and a second TED. The first TED is configured to process a first image data to provide a first display data to the first display region and the second TED is configured to process a second image data to provide a second display data to the second display region. The first TED is configured to control display timings of the first display data and the second display data.

Abstract: A display device includes at least one display panel and a display driver integrated circuit (DDI). The at least one display panel includes a first display region and a second display region. The DDI includes a first timing controller-embedded driver (TED) and a second TED. The first TED is configured to process a first image data to provide a first display data to the first display region and the second TED is configured to process a second image data to provide a second display data to the second display region. The first TED is configured to control display timings of the first display data and the second display data.

Abstract: A data input circuit includes a clock sampling unit, a final clock generation unit, and a write latch signal generation unit. The sampling unit is configured to generate a shifting signal including a pulse generated after a write latency is elapsed, and generate a sampling clock by sampling an internal clock during a burst period from substantially a time when the pulse of the shifting signal is generated. The final clock generation unit is configured to generate a level signal by latching the shifting signal in synchronization with the sampling clock and generate a final clock from the level signal in response to a burst signal. The write latch signal generation unit is configured to generate an enable signal by latching the final clock and generate a write latch signal for latching and outputting aligned data in response to the enable signal.

Abstract: A data input circuit includes a clock sampling unit, a final clock generation unit, and a write latch signal generation unit. The sampling unit is configured to generate a shifting signal including a pulse generated after a write latency is elapsed, and generate a sampling clock by sampling an internal clock during a burst period from substantially a time when the pulse of the shifting signal is generated. The final clock generation unit is configured to generate a level signal by latching the shifting signal in synchronization with the sampling clock and generate a final clock from the level signal in response to a burst signal. The write latch signal generation unit is configured to generate an enable signal by latching the final clock and generate a write latch signal for latching and outputting aligned data in response to the enable signal.

Abstract: A data input circuit includes a clock sampling unit, a final clock generation unit, and a write latch signal generation unit. The sampling unit is configured to generate a shifting signal including a pulse generated after a write latency is elapsed, and generate a sampling clock by sampling an internal clock during a burst period from substantially a time when the pulse of the shifting signal is generated. The final clock generation unit is configured to generate a level signal by latching the shifting signal in synchronization with the sampling clock and generate a final clock from the level signal in response to a burst signal. The write latch signal generation unit is configured to generate an enable signal by latching the final clock and generate a write latch signal for latching and outputting aligned data in response to the enable signal.

Abstract: A data input circuit includes a valid strobe signal generation circuit and a data strobe signal counter. The valid strobe signal generation circuit is configured to remove a pulse of an internal strobe signal generated and generate a valid strobe signal. The pulse may have been generated during a preamble period. The data strobe signal counter is configured to count the valid strobe signal according to burst length information and generate a write latch signal for aligning data at a time of a write operation.

Abstract: A power-up signal generation circuit includes a fixed level transition voltage generation unit, a variable level transition voltage generation unit, a comparison unit, and a selective output unit. The fixed level transition voltage generation unit is configured to generate a fixed level transition voltage changing at a constant level of an external voltage. The variable level transition voltage generation unit is configured to generate a variable level transition voltage changing at a level of an external voltage which varies depending on temperature. The comparison unit is configured to compare the level of the fixed level transition voltage with the level of the variable level transition voltage, and generate a selection signal. The selective output unit is configured to output the fixed level transition voltage or the variable level transition voltage as a power-up signal in response to the selection signal.

Abstract: A data input circuit includes a clock sampling unit, a final clock generation unit, and a write latch signal generation unit. The sampling unit is configured to generate a shifting signal including a pulse generated after a write latency is elapsed, and generate a sampling clock by sampling an internal clock during a burst period from substantially a time when the pulse of the shifting signal is generated. The final clock generation unit is configured to generate a level signal by latching the shifting signal in synchronization with the sampling clock and generate a final clock from the level signal in response to a burst signal. The write latch signal generation unit is configured to generate an enable signal by latching the final clock and generate a write latch signal for latching and outputting aligned data in response to the enable signal.

Abstract: A multi-port semiconductor memory device having variable access paths and a method therefor are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports.

Abstract: A data input circuit includes a valid strobe signal generation circuit and a data strobe signal counter. The valid strobe signal generation circuit is configured to remove a pulse of an internal strobe signal generated and generate a valid strobe signal. The pulse may have been generated during a preamble period. The data strobe signal counter is configured to count the valid strobe signal according to burst length information and generate a write latch signal for aligning data at a time of a write operation.

Abstract: A power-up signal generation circuit includes a fixed level transition voltage generation unit, a variable level transition voltage generation unit, a comparison unit, and a selective output unit. The fixed level transition voltage generation unit is configured to generate a fixed level transition voltage changing at a constant level of an external voltage. The variable level transition voltage generation unit is configured to generate a variable level transition voltage changing at a level of an external voltage which varies depending on temperature. The comparison unit is configured to compare the level of the fixed level transition voltage with the level of the variable level transition voltage, and generate a selection signal. The selective output unit is configured to output the fixed level transition voltage or the variable level transition voltage as a power-up signal in response to the selection signal.

Abstract: A multi-port semiconductor memory device having variable access paths and a method therefor are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports.

Abstract: A multi-port semiconductor memory device having variable access paths and a method therefor are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports.

Abstract: A multi-port semiconductor memory device having variable access paths and a method therefore are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports.

Abstract: A micro controller unit (MCU) system and a flash memory accessing method performed by the MCU system are provided. In the flash memory accessing method, when a first address, which is currently accessed, is inconsecutive to a second address, which is accessed next to the first address, an MCU that accesses a plurality of flash memory blocks using an interleaving technique performs an address operation cycle on the second address. At substantially the same time, one of the flash memory blocks that includes an address next to the first address stores the next address of the first address and data of the next address in one of a plurality of registers.

Abstract: A system and method for improving the performance of a central processing unit (CPU), in which the system includes a first master such as a CPU, a first local bus connected to a memory device, a bridge, and a main bus connected to a second master and a peripheral device. The bridge is connected among the first master, the memory device, and the main bus and functions as a wrapper and also serves to decode an address output from the first master, monitor a status of ownership of the main bus, and output a wait signal to the first master based on a decoding result and a monitoring result. Accordingly, even while the second master is accessing the peripheral device via the main bus, the first master can access the memory device via the first local bus. The memory device includes a memory core storing predetermined data and a controller having an arbitration function.

Abstract: A semiconductor memory device includes ports, data line pairs, where each port associated with one of the data line pairs, sets of address lines, where each port associated with one of the sets of address lines, a shared memory region of a memory cell array, where the shared memory region accessible through the ports, an access controller coupled to the ports and configured to generate an access selection signal in response to a plurality of control signals received through the ports, and an access router coupled to the shared memory region, the data line pairs, and the sets of address lines, the access router configured to selectively couple one of the sets of address lines and one of the data line pairs to the shared memory region in response to the access selection signal.

Abstract: A multi-port semiconductor memory device having variable access paths and a method therefor are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports.