Abstract: Provided is a concentration measuring device which includes: a main pipe through which a fluid whose concentration is to be measured flows; a flow cell having a fluid passage and a light passage formed to pass through the fluid passage; a spectrometer capable of measuring absorbance for each wavelength of the source light transmitted to the flow cell and the received light receiving from the flow cell; and an optical cable connecting the flow cell and the spectrometer with each other, wherein the flow cell is separated from the main pipe to be provided separately, and a fluid pipe is connected to the flow cell, so that the fluid flows from the main pipe to the flow cell through the fluid pipe using a pitot tube.

Abstract: An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes a transient-state detection circuit configured to generate a dynamic triggering signal based on a voltage change rate of a voltage on a first power rail; a voltage detection circuit configured to generate a static triggering signal based on the voltage on the first power rail; a trigger circuit configured to generate a discharge control signal based on the dynamic triggering signal and the static triggering signal; and a main discharge circuit configured to discharge an electric charge from the first power rail to a second power rail based on the discharge control signal.

Abstract: An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes a transient-state detection circuit configured to generate a dynamic triggering signal based on a voltage change rate of a voltage on a first power rail; a voltage detection circuit configured to generate a static triggering signal based on the voltage on the first power rail; a trigger circuit configured to generate a discharge control signal based on the dynamic triggering signal and the static triggering signal; and a main discharge circuit configured to discharge an electric charge from the first power rail to a second power rail based on the discharge control signal.

Abstract: A method of manufacturing a diode is provided. An N-type well region is formed in a first upper portion of an N-type epitaxial layer. A P-type drift region is formed in a second upper portion of the N-type epitaxial layer. An N-type doping region is formed in the N-type well region. A P-type doping region is formed in the P-type drift region. An isolation structure is formed in the P-type drift region. The isolation structure is disposed between the P-type doping region and the N-type well region. A first electrode is formed on a portion of the N-type epitaxial layer. The portion of the N-type epitaxial layer is disposed between the N-type well region and the P-type drift region. The first electrode overlaps a portion of the isolation structure. A connection structure is formed to electrically couple the N-type doping region and the first electrode.

Abstract: A method of manufacturing a diode is provided. An N-type well region is formed in a first upper portion of an N-type epitaxial layer. A P-type drift region is formed in a second upper portion of the N-type epitaxial layer. An N-type doping region is formed in the N-type well region. A P-type doping region is formed in the P-type drift region. An isolation structure is formed in the P-type drift region. The isolation structure is disposed between the P-type doping region and the N-type well region. A first electrode is formed on a portion of the N-type epitaxial layer. The portion of the N-type epitaxial layer is disposed between the N-type well region and the P-type drift region. The first electrode overlaps a portion of the isolation structure. A connection structure is formed to electrically couple the N-type doping region and the first electrode.

Abstract: An electrostatic discharge (ESD) protection element includes a first diode, a second diode, and a poly resistor. The first diode is connected between a first voltage and an input/output (I/O) pad. The second diode is connected between the I/O pad and a second voltage. The poly resistor is formed on the second diode.

Abstract: An electrostatic discharge (ESD) protection element includes a first diode, a second diode, and a poly resistor. The first diode is connected between a first voltage and an input/output (I/O) pad. The second diode is connected between the I/O pad and a second voltage. The poly resistor is formed on the second diode.