Abstract: Disclosed is a wireless sensor network. The present wireless sensor network comprises multiple sensor modes, at least one sync node for receiving sensing data from the multiple sensor nodes on the basis of BLE, and a server communicating with the sync node. In addition, each of the multiple sensor nodes comprises a wireless sensor module which can be selectively connected to at least one sensor.

Abstract: The present disclosure relates to a device and method for forming skyrmion in a magnetic thin film. A skyrmion forming method comprises aligning the surface of the magnetic thin film and a horizontal magnetic field to be applied to the magnetic thin film and applying the horizontal magnetic field and a vertical magnetic field to the magnetic thin film. Accordingly, it is possible to form the bubble skyrmion easily even in the case of a wide width of a stripe formed on the magnetic thin film.

Abstract: The present disclosure relates to an apparatus for generating, erasing, and moving a skyrmion in a magnetic thin film. The apparatus for generating, erasing, and moving the skyrmion may include: a first electrode to which a first voltage for generating and erasing the skyrmion is applied; a second electrode to which a second voltage for moving the generated skyrmion is applied; a free layer having one end connected to a ground and the other end connected to the second electrode; a pinned layer which is connected to the first electrode; and a barrier layer which is provided between the free layer and the pinned layer and includes a conducting path connecting the free layer and the pinned layer.

Abstract: The present disclosure relates to a device and method for forming skyrmion in a magnetic thin film. A skyrmion forming method comprises aligning the surface of the magnetic thin film and a horizontal magnetic field to be applied to the magnetic thin film and applying the horizontal magnetic field and a vertical magnetic field to the magnetic thin film. Accordingly, it is possible to form the bubble skyrmion easily even in the case of a wide width of a stripe formed on the magnetic thin film.

Abstract: Provided is a method of measuring a magnitude of magnetization of a perpendicular magnetic thin film, including: forming a stripe pattern in which a first magnetic domain that extends in a y direction and is magnetized in a z direction and a second magnetic domain that extends in the y direction and is magnetized in a direction opposite to the z direction are arranged alternately in an x direction, in a perpendicular magnetic thin film that extends in an xy plane; changing widths in the x direction, of the first and second magnetic domains by applying a magnetic field having a predetermined magnitude, in the z direction, to the perpendicular magnetic thin film; and calculating an absolute value of the magnetization of the perpendicular magnetic thin film on the basis of a ratio between the widths in the x direction, of the first magnetic domain and the second magnetic domain.

Abstract: Disclosed is a method of forming a doughnut-shaped skyrmion, the method including heating a local area of a vertical magnetic thin film magnetized in a first direction, which is any one of an upward direction and a downward direction, applying a magnetic field having a second direction, which is opposite the first direction, and having intensity higher than coercive force of the vertical magnetic thin film to the vertical magnetic thin film to form a first area magnetized in the second direction, applying a magnetic field having the second direction to the vertical magnetic thin film to form a second area, which is an extension of the first area, and applying a magnetic field having the first direction to the vertical magnetic thin film to form a third area magnetized in the first direction in the second area.

Abstract: Disclosed is a method of forming a doughnut-shaped skyrmion, the method including heating a local area of a vertical magnetic thin film magnetized in a first direction, which is any one of an upward direction and a downward direction, applying a magnetic field having a second direction, which is opposite the first direction, and having intensity higher than coercive force of the vertical magnetic thin film to the vertical magnetic thin film to form a first area magnetized in the second direction, applying a magnetic field having the second direction to the vertical magnetic thin film to form a second area, which is an extension of the first area, and applying a magnetic field having the first direction to the vertical magnetic thin film to form a third area magnetized in the first direction in the second area.

Abstract: Provided is a method of measuring a magnitude of magnetization of a perpendicular magnetic thin film, including: forming a stripe pattern in which a first magnetic domain that extends in a y direction and is magnetized in a z direction and a second magnetic domain that extends in the y direction and is magnetized in a direction opposite to the z direction are arranged alternately in an x direction, in a perpendicular magnetic thin film that extends in an xy plane; changing widths in the x direction, of the first and second magnetic domains by applying a magnetic field having a predetermined magnitude, in the z direction, to the perpendicular magnetic thin film; and calculating an absolute value of the magnetization of the perpendicular magnetic thin film on the basis of a ratio between the widths in the x direction, of the first magnetic domain and the second magnetic domain.

Abstract: A method of controlling a magnetization state using an imprinting technique may be provided. The method may include moving first and second magnetic structures, which have different magnetization states, toward each other and changing a magnetization state of the first or second magnetic structure, when a distance between the first and second magnetic structures is reduced. A magnetic field, which is produced by a magnetization state of one of the first and second magnetic structures, may be used to align a magnetization state of the other, when the magnetization state of the first or second magnetic structure is changed.

Abstract: A method of controlling a magnetization state using an imprinting technique may be provided. The method may include moving first and second magnetic structures, which have different magnetization states, toward each other and changing a magnetization state of the first or second magnetic structure, when a distance between the first and second magnetic structures is reduced. A magnetic field, which is produced by a magnetization state of one of the first and second magnetic structures, may be used to align a magnetization state of the other, when the magnetization state of the first or second magnetic structure is changed.

Abstract: An information storage device includes a magnetic track and a pinning element for pinning the magnetic domain wall. The magnetic track includes a plurality of magnetic domains and a magnetic domain wall arranged between each pair of adjacent magnetic domains. The pinning element is configured to apply a magnetic field to pin the magnetic domain wall to the magnetic track. The magnetic field may have the same magnetization direction as the magnetic domain wall.