Patents by Inventor Kyoutaro Hirasawa

Kyoutaro Hirasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pressure contact type semiconductor device with axial bias and radial restraint between a distortion buffer plate and a semiconductor body
    Patent number: 5641976
    Abstract: An alloy-free pressure contact type semiconductor device maintains a high reliability during transportation even without a pressure contact tool such as a simplified stack and therefore does not require a high transportation cost. Through holes (H1) and (H2) each having a circular cross section are formed in distortion buffer plates (21A) and (21K) at the center. A first and a second bottomed holes (i.e., recesses) (N1) and (N2) are formed in an anode electrode plate (41A) and a cathode electrode plate (41K). From the through hole (H1) up to the first bottomed hole (N1), a pressure contact pin (9) biased by a coil spring (8) is disposed. From the through hole (H2) down to the second bottomed hole (N2), a fixing pin (90) is disposed. Without applying external pressure upon the device, it is possible to prevent displacement of the first and the second distortion buffer plates due to vibration or impact during transportation and damage to a semiconductor body.
    Type: Grant
    Filed: February 14, 1995
    Date of Patent: June 24, 1997
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kazunori Taguchi, Kyoutaro Hirasawa, Yuzuru Konishi