Patents by Inventor Kyoyu Yasuda
Kyoyu Yasuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9607849Abstract: A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.Type: GrantFiled: April 10, 2014Date of Patent: March 28, 2017Assignee: JSR CORPORATIONInventors: Kazuhiko Koumura, Shinya Minegishi, Takashi Mori, Kyoyu Yasuda, Yoshio Takimoto, Shinya Nakafuji, Toru Kimura
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Patent number: 9170492Abstract: A silicon-containing film-forming composition includes a polysiloxane and organic solvent. The polysiloxane includes a first structural unit, a second structural unit, and a third structural unit. The first structural unit is derived from a tetraalkoxysilane. The second structural unit is derived from a compound shown by a formula (1), wherein R1 represents a hydrogen atom or an electron-donating group, at least one R1 is an electron-donating group, R2 represents a monovalent organic group, and n represents 0 or 1. The third structural unit is derived from a compound shown by a formula (2), wherein R3 represents an alkyl group having 1 to 8 carbon atoms, and R4 represents a monovalent organic group.Type: GrantFiled: March 12, 2010Date of Patent: October 27, 2015Assignee: JSR CORPORATIONInventors: Tomoharu Kawazu, Masato Tanaka, Takashi Mori, Kazunori Takanashi, Kyoyu Yasuda
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Patent number: 9140985Abstract: A silicon-containing film-forming composition includes a polysiloxane and organic solvent. The polysiloxane includes a first structural unit, a second structural unit, and a third structural unit. The first structural unit is derived from a tetraalkoxysilane. The second structural unit is derived from a compound shown by a formula (1), wherein R1 represents a hydrogen atom or an electron-donating group, at least one R1 is an electron-donating group, R2 represents a monovalent organic group, and n represents 0 or 1. The third structural unit is derived from a compound shown by a formula (2), wherein R3 represents an alkyl group having 1 to 8 carbon atoms, and R4 represents a monovalent organic group.Type: GrantFiled: March 12, 2010Date of Patent: September 22, 2015Assignee: JSR CORPORATIONInventors: Tomoharu Kawazu, Masato Tanaka, Takashi Mori, Kazunori Takanashi, Kyoyu Yasuda
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Patent number: 9126231Abstract: An insulation pattern-forming method includes forming an organic pattern on a substrate. A space defined by the organic pattern is filled with an insulating material. The organic pattern is removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured. An insulation pattern-forming method includes forming a first organic pattern on the substrate. A space defined by the first organic pattern is filled with an insulating material. An upper surface of the first organic pattern is exposed. A second organic pattern that comes in contact with the upper surface of the first organic pattern is formed. A space defined by the second organic pattern is filled with the insulating material. The first organic pattern and the second organic pattern are removed to obtain an inverted pattern formed of the insulating material. The inverted pattern is cured.Type: GrantFiled: November 27, 2012Date of Patent: September 8, 2015Assignee: JSR CorporationInventors: Satoshi Dei, Hayato Namai, Kyoyu Yasuda, Koichi Hasegawa
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Patent number: 9046769Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: GrantFiled: September 4, 2014Date of Patent: June 2, 2015Assignee: JSR CORPORATIONInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Patent number: 9029069Abstract: A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).Type: GrantFiled: March 29, 2012Date of Patent: May 12, 2015Assignee: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Publication number: 20140371466Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: ApplicationFiled: September 4, 2014Publication date: December 18, 2014Applicant: JSR CorporationInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Patent number: 8871432Abstract: A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).Type: GrantFiled: March 28, 2013Date of Patent: October 28, 2014Assignee: JSR CorporationInventors: Shin-ya Minegishi, Satoru Murakami, Yushi Matsumura, Kazuhiko Komura, Yoshio Takimoto, Shin-ya Nakafuji, Kyoyu Yasuda
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Patent number: 8859185Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.Type: GrantFiled: July 22, 2013Date of Patent: October 14, 2014Assignee: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Patent number: 8859191Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: GrantFiled: May 8, 2012Date of Patent: October 14, 2014Assignee: JSR CorporationInventors: Yushi Matsumura, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Publication number: 20140220783Abstract: A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.Type: ApplicationFiled: April 10, 2014Publication date: August 7, 2014Applicant: JSR CORPORATIONInventors: Kazuhiko KOUMURA, Shinya MINEGISHI, Takashi MORI, Kyoyu YASUDA, Yoshio TAKIMOTO, Shinya NAKAFUJI, Toru KIMURA
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Publication number: 20130310514Abstract: A resist underlayer film-forming composition includes a polymer including a repeating unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and a solvent. Each of R3 to R8 individually represent a group shown by the following formula (2) or the like. R1 represents a single bond or the like. R2 represents a hydrogen atom or the like.Type: ApplicationFiled: July 22, 2013Publication date: November 21, 2013Applicant: JSR CorporationInventors: Shin-ya MINEGISHI, Yushi MATSUMURA, Shinya NAKAFUJI, Kazuhiko KOMURA, Takanori NAKANO, Satoru MURAKAMI, Kyoyu YASUDA, Makoto SUGIURA
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Patent number: 8513133Abstract: A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1?R2??(2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.Type: GrantFiled: August 30, 2011Date of Patent: August 20, 2013Assignee: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Publication number: 20120285929Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.Type: ApplicationFiled: May 8, 2012Publication date: November 15, 2012Applicant: JSR CorporationInventors: Yushi MATSUMURA, Shinya Minegishi, Satoru Murakami, Yusuke Anno, Shinya Nakafuji, Kazuhiko Komura, Kyoyu Yasuda
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Publication number: 20120270157Abstract: A resist underlayer film-forming composition includes a polymer including a structural unit shown by a formula (1), and having a polystyrene-reduced weight average molecular weight of from 3000 to 10000, and a solvent. Each of R3 to R8 independently represents a group shown by a formula (2), a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkoxycarbonyl group having 2 to 10 carbon atoms, an aryl group having 6 to 14 carbon atoms, or a glycidyl ether group having 3 to 6 carbon atoms, wherein at least one of R3 to R8 represents the group shown by the formula (2).Type: ApplicationFiled: March 29, 2012Publication date: October 25, 2012Applicant: JSR CorporationInventors: Shin-ya Minegishi, Yushi Matsumura, Shinya Nakafuji, Kazuhiko Komura, Takanori Nakano, Satoru Murakami, Kyoyu Yasuda, Makoto Sugiura
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Publication number: 20120252217Abstract: A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, wherein R3 to R8 individually represent a group shown by the following formula (2) or the like, —O—R1?R2 ??(2) wherein R1 represents a single bond or the like, and R2 represents a hydrogen atom or the like.Type: ApplicationFiled: August 30, 2011Publication date: October 4, 2012Applicant: JSR CorporationInventors: Shin-ya MINEGISHI, Yushi MATSUMURA, Shinya NAKAFUJI, Kazuhiko KOMURA, Takanori NAKANO, Satoru MURAKAMI, Kyoyu YASUDA, Makoto SUGIURA
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Publication number: 20100233632Abstract: A silicon-containing film-forming composition includes a polysiloxane and organic solvent. The polysiloxane includes a first structural unit, a second structural unit, and a third structural unit. The first structural unit is derived from a tetraalkoxysilane. The second structural unit is derived from a compound shown by a formula (1), wherein R1 represents a hydrogen atom or an electron-donating group, at least one R1 is an electron-donating group, R2 represents a monovalent organic group, and n represents 0 or 1. The third structural unit is derived from a compound shown by a formula (2), wherein R3 represents an alkyl group having 1 to 8 carbon atoms, and R4 represents a monovalent organic group.Type: ApplicationFiled: March 12, 2010Publication date: September 16, 2010Applicant: JSR CorporationInventors: Tomoharu KAWAZU, Masato TANAKA, Takashi MORI, Kazunori TAKANASHI, Kyoyu YASUDA
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Publication number: 20100178620Abstract: A method for forming an inverted pattern includes forming a photoresist pattern on a substrate, filling a space formed by the photoresist pattern with a resin composition including a polysiloxane and a solvent, and removing the photoresist pattern to form an inverted pattern. The resin composition includes (A) a polysiloxane obtained by hydrolysis and condensation of two types of hydrolysable silane compounds having a specific structure, and (B) an organic solvent containing an alcohol or ether having a specific structure.Type: ApplicationFiled: November 24, 2009Publication date: July 15, 2010Applicant: JSR CorporationInventors: Satoshi DEI, Kyoyu Yasuda, Koichi Hasegawa, Fumihiro Toyokawa, Masato Tanaka, Keiji Konno
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Publication number: 20100167024Abstract: A negative-tone radiation-sensitive composition includes a polymer, a photoacid generator, and a solvent. The polymer has a polystyrene-reduced weight average molecular weight of 4000 to 200,000, and is obtained by hydrolysis and condensation of at least one hydrolyzable silane compound among compounds shown by RaSi(OR1)4-a, Si(OR2)4 and R3x(R4O)3-xSi—(R7)z—Si(OR5)3-yR6y. “R” represents a fluorine atom, an alkylcarbonyloxy group, or a linear or branched alkyl group having 1 to 5 carbon atoms. “R1” represents a monovalent organic group. “R2” represents a monovalent organic group. “R3” and “R6” individually represent a fluorine atom, an alkylcarbonyloxy group, or a linear or branched alkyl group having 1 to 5 carbon atoms “R4” and “R5” individually represent a monovalent organic group. “R7” represents an oxygen atom, a phenylene group, or a group —(CH2)m—. The content of units derived from the compound RaSi(OR1)4-a is 50 to 100 mol % of the total units forming the polymer.Type: ApplicationFiled: December 24, 2009Publication date: July 1, 2010Applicant: JSR CorporationInventors: Norihiro Natsume, Takanori Kishida, Hayato Namai, Kyoyu Yasuda, Satoshi Dei, Koichi Hasegawa